CXG1144AEN High Power DPDT Switch with Logic Control Description The CXG1144AEN is a high power DPDT switch MMIC. This IC can be used in wireless communication systems, for example, CDMA handsets with GPS. The CXG1144AEN can be operated by one CMOS control line. The Sony's J-FET process is used for low insertion loss and on-chip logic circuit. 10 pin VSON (Plastic) Features • Low insertion loss: 0.30dB @900MHz, 0.45dB @1900MHz • High linearity: IIP3 (Typ.) = 65dBm • 1 CMOS compatible control line • Small package size: 10-pin VSON Applications • Dual-band cellular handsets • CDMA with GPS, dual-band CDMA Structure GaAs J-FET MMIC Absolute Maximum Ratings (Ta = 25°C) • Bias voltage VDD 7 • Control voltage • Operating temperature • Storage temperature Vctl Topr Tstg 5 –35 to +85 –65 to +150 V V °C °C GaAs MMICs are ESD sensitive devices. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E04Z04 CXG1144AEN Block Diagram and Terminal Arrangement Figure GND (recommended) RF3 6 5 RF2 4 GND 3 GND 2 RF1 1 CTL F2 GND 7 F3 GND 8 RF4 9 F1 F4 VDD 10 VDD Logic GND (recommended) Truth Table CTL ON state OFF state F1 F2 F3 F4 L RF1 – RF2, RF3 – RF4 RF2 – RF3, RF4 – RF1 ON OFF ON OFF H RF2 – RF3, RF4 – RF1 RF1 – RF2, RF3 – RF4 OFF ON OFF ON Pin Description 1 Pin No. Symbol Description 1 CTL Control signal input 2 RF1 RF signal input 3 GND GND 4 GND GND 5 RF2 RF signal output 6 RF3 RF signal input 7 GND GND 8 GND GND 9 RF4 RF signal output 10 VDD Power supply input –2– CXG1144AEN Pin Description 2 Pin No. Symbol Equivalent circuit Logic 1 1 CTL F1 to F4 10 10 VDD DC Bias Condition Item (Ta = 25°C) Min. Typ. Max. Unit Vctl (H) 2.0 3.0 3.6 V Vctl (L) 0 — 0.4 V 2.7 3.0 3.6 V VDD –3– CXG1144AEN Electrical Characteristics Item (Ta = 25°C, VDD = 3.0V) Symbol Insertion loss IL Isolation ISO. VSWR VSWR 2fo Harmonics 3fo Typ. Max. Unit 900MHz 0.30 0.55 dB 1.9GHz 0.45 0.70 dB Condition Min. 900MHz 18 21 dB 1.9GHz 14 16 dB 1.2 — 50Ω ∗1 –75 –60 dBc ∗3 –75 –60 dBc ∗1 –75 –60 dBc ∗3 –75 –60 dBc ∗2 Input IP3 IIP3 55 65 dBm ∗4 55 65 dBm 1dB compression input power P1dB VDD = 2.8V 32 35 dBm Switching speed TSW Bias current IDD Control current Ictl 1 5 µs VDD = 3.0V 55 200 µA Vctl (H) = 3V 40 100 µA Condition ∗1 Pin = 25dBm, 0/3V control, VDD = 3.0V, 900MHz ∗2 Pin = 25dBm (900MHz) +25dBm (901MHz), 0/3V control, VDD = 3.0V ∗3 Pin = 25dBm, 0/3V control, VDD = 3.0V, 1.9GHz ∗4 Pin = 25dBm (1.9GHz) +25dBm (1.901GHz), 0/3V control, VDD = 3.0V –4– CXG1144AEN Electrical Characteristics Measurement Circuit GND (recommended) 5 6 RF3 CRF (100pF) RF2 CRF (100pF) GND 7 4 GND GND 8 3 GND 9 2 RF4 RF1 CRF (100pF) CRF (100pF) Rctl (1kΩ) VDD Cbypass (100pF) 10 1 CTL Cbypass (100pF) GND (recommended) When using this IC, the following external components should be used: Rctl: This resistor is used to improve ESD performance. 1kΩ is recommended. CRF: This capacitor is used for RF de-coupling and must be used for all applications. 100pF is recommended. Cbypass: This capacitor is used for DC line filtering. 100pF is recommended. –5– CXG1144AEN Typical Characteristics Frequency vs. Insertion loss 0 Insertion loss [dB] 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 1.5 2.0 Frequency [GHz] Frequency vs. Isolation 0 5 10 Isolation [dB] 15 20 25 30 35 40 45 50 0 0.5 1.0 Frequency [GHz] –6– CXG1144AEN Package Outline Unit: mm 10PIN VSON(PLASTIC) + 0.1 0.8 – 0.05 0.6 2.5 0.05 S A 2.5 5 B 0.4 0.8 x2 0.35 ± 0.1 0.15 S B x4 0.15 S A B 0.03 ± 0.03 (Stand Off) 0.05 M S AB 0.225 ± 0.03 1 0.2 ± 0.01 PIN 1 INDEX 2.7 6 10 0.5 ± 0.2 0.35 ± 0.1 S Solder Plating 0.13 ± 0.025 + 0.09 0.14 – 0.03 TERMINAL SECTION NOTE: 1) The dimensions of the terminal section apply to the ranges of 0.1mm and 0.25mm from the end of a terminal. PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER ALLOY JEDEC CODE PACKAGE MASS 0.013g SONY CODE VSON-10P-01 LEAD SPECIFICATIONS ITEM –7– SPEC. LEAD MATERIAL COPPER ALLOY LEAD TREATMENT Sn-Bi 2.5% LEAD TREATMENT THICKNESS 5-18µm Sony Corporation