SDR1P thru SDR1W and SDR1PSMS and SDR1WSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 AMP 1300 ─ 1900 VOLTS 70 nsec ULTRA FAST RECTIFIER Designer’s Data Sheet Part Number/Ordering Information 1/ SDR1 __ __ __ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ S = S Level │ └ Package Type __ = Axial Leaded SMS = Surface Mount Square Tab Family P = 1300 V R = 1400 V S = 1500 V T = 1600 V V = 1700 V W = 1800 V FEATURES: Ultra Fast Recovery: 70 ns Max @ 25°C 4/ Single Chip Construction PIV to 1800 Volts Low Reverse Leakage Current Hermetically Sealed For High Efficiency Applications Available in Axial and Surface Mount Versions Metallurgically Bonded TX, TXV, and S-Level Screening Available2/ MAXIMUM RATINGS 3/ RATING Peak Repetitive Reverse Voltage And DC Blocking Voltage SYMBOL SDR1P and SDR1PSMS SDR1R and SDR1RSMS SDR1S and SDR1SSMS SDR1T and SDR1TSMS SDR1V and SDR1VSMS SDR1W and SDR1WSMS Rectified Forward Forward Current (Resistive Load, 60 Hz, Sine Wave, TA = 25°C) Peak Surge Current (8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25°C) Operating & Storage Temperature Thermal Resistance, Junction to Lead, L = 3/8” (Axial) Junction to End Tab (SMS) NOTES: VRRM VRWM VR VALUE UNIT 1300 1400 1500 1600 1700 1800 Volts IO 1.0 Amp IFSM 12 Amps TOP and TSTG RθJL RθJE -65 to +175 °C 40 28 °C/W Axial Lead SMS 1/ For Ordering Information, Price, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. 4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp. 5/ For information on operating curves, contact factory. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0001J DOC SDR1P thru SDR1W and SDR1PSMS and SDR1WSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS 3/ CHARACTERISTICS SYMBOL VALUE UNIT Instantaneous Forward Voltage Drop (IF = 1 Adc, 300- 500 μs Pulse, TA = 25°C) VF1 3.60 Vdc Instantaneous Forward Voltage Drop (IF = 1 Adc, 300- 500 μs Pulse, TA = -55°C) VF2 4.80 Vdc Maximum Reverse Leakage Current (Rated VR, 300 μs Pulse Minimum , TA = 25°C) IR1 5 μA Maximum Reverse Leakage Current (Rated VR, 300 μs Pulse Minimum , TA = 100°C) IR2 100 μA Junction Capacitance (VR = 100Vdc, TA = 25°C , f = 1MHz) CJ 20 pf trr 70 ns Maximum Reverse Recovery Time 4/ DIMENSIONS Axial Leaded Case Outline: DIM. A B C D DIMENSIONS MIN. MAX. .100” .150” .125” .200” .027” .033” 1.00” --- NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Square Tab Surface Mount Case Outline: DATA SHEET #: RU0001J DIM. A B C D MIN. .135” .175” .022” .002” MAX. .155” .250” .028” --- DOC