SSDI SDR4M

SDR4G - SDR4N
and
SDR4GSMS – SDR4NSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
DESIGNER’S DATA SHEET
3 AMP
400 – 1200 Volts
50-80 nsec
Part Number / Ordering Information 1/
SDR4 __ __ __
⏐
⏐
⏐
⏐
⏐
⏐
⏐
L
⏐
⏐
⏐
⏐
2/
L Screening
= None
TX = TX Level
TXV = TXV Level
S = S Level
L Package
___ = Axial
SMS = Surface Mount Square Tab
Voltage
G = 400 V
J = 600 V
K = 800 V
M = 1000 V
N = 1200 V
ULTRA FAST RECTIFIER
Features:
• Ultra Fast Recovery: 50-80 nsec Max. @ 25°C
85-125 nsec Max. @ 100°C
• Single Chip Construction
• PIV to 1200 Volts
• Low Reverse Leakage Current
• Hermetically Sealed
• For High Efficiency Applications
• Available in Axial Leaded & Surface Mount versions
• Metallurgically Bonded
• TX, TXV, and S-Level Screening Available2/
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SDR4G
SDR4J
SDR4K
SDR4M
SDR4N
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, TA = 25ºC)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Lead, L = 3/8 "
Junction to End Tab
Notes:
1/ For Ordering Information, Price, Operating Curves, and
Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows
Available on Request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
Symbol
Value
Units
VRRM
Volts
VR
400
600
800
1000
1200
Io
3
Amps
IFSM
75
Amps
Top & Tstg
-65 to +175
ºC
RθJL
RθJE
20
14
ºC/W
VRWM
Axial Leaded
DATA SHEET #: RU0015B
SMS (Square)
DOC
SDR4G - SDR4N
and
SDR4GSMS – SDR4NSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Electrical Characteristics
Part Type Symbol
Instantaneous Forward Voltage Drop
(IF = 3 Adc, TA = 25ºC, 300 µs pulse)
Instantaneous Forward Voltage Drop
(IF = 3 Adc, TA = -55ºC, 300 µs pulse)
Reverse Leakage Current
(Rated VR, TA = 25ºC, 300 µs pulse minimum)
Reverse Leakage Current
(Rated VR, TA = 100ºC, 300 µs pulse minimum)
Junction Capacitance
(VR = 10 Vdc, TA = 25ºC, f = 1MHz)
SDR2G – J
SDR2K – N
VF
SDR2G – J
SDR2K – N
VF
SDR2G – J
SRS1K
SRS1M
SRS1N
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 0.25A, TA = 25ºC)
Max
Units
1.9
2.1
2.1
2.3
Vdc
Vdc
IR
5
μA
IR
0.5
μA
CJ
40
pF
trr
50
60
70
80
nsec
Case Outline: (Axial)
DIMENSIONS
D
B
ØC
D
ØA
DIM
A
B
C
D
MIN
.120”
.130”
.047”
1.00”
MAX
.180”
.230”
.053”
---
Case Outline: Surface Mount (SMS)
B
A
A
C
D
DIMENSIONS
DIM
MIN
0.172”
A
0.180”
B
0.022”
C
0.002”
D
MAX
0.180”
0.280”
0.028”
––
Dimensions prior to solder dipping
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0015B
DOC