SDR4G - SDR4N and SDR4GSMS – SDR4NSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 3 AMP 400 – 1200 Volts 50-80 nsec Part Number / Ordering Information 1/ SDR4 __ __ __ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ L ⏐ ⏐ ⏐ ⏐ 2/ L Screening = None TX = TX Level TXV = TXV Level S = S Level L Package ___ = Axial SMS = Surface Mount Square Tab Voltage G = 400 V J = 600 V K = 800 V M = 1000 V N = 1200 V ULTRA FAST RECTIFIER Features: • Ultra Fast Recovery: 50-80 nsec Max. @ 25°C 85-125 nsec Max. @ 100°C • Single Chip Construction • PIV to 1200 Volts • Low Reverse Leakage Current • Hermetically Sealed • For High Efficiency Applications • Available in Axial Leaded & Surface Mount versions • Metallurgically Bonded • TX, TXV, and S-Level Screening Available2/ Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR4G SDR4J SDR4K SDR4M SDR4N Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 3/8 " Junction to End Tab Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Symbol Value Units VRRM Volts VR 400 600 800 1000 1200 Io 3 Amps IFSM 75 Amps Top & Tstg -65 to +175 ºC RθJL RθJE 20 14 ºC/W VRWM Axial Leaded DATA SHEET #: RU0015B SMS (Square) DOC SDR4G - SDR4N and SDR4GSMS – SDR4NSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics Part Type Symbol Instantaneous Forward Voltage Drop (IF = 3 Adc, TA = 25ºC, 300 µs pulse) Instantaneous Forward Voltage Drop (IF = 3 Adc, TA = -55ºC, 300 µs pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µs pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µs pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) SDR2G – J SDR2K – N VF SDR2G – J SDR2K – N VF SDR2G – J SRS1K SRS1M SRS1N Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A, TA = 25ºC) Max Units 1.9 2.1 2.1 2.3 Vdc Vdc IR 5 μA IR 0.5 μA CJ 40 pF trr 50 60 70 80 nsec Case Outline: (Axial) DIMENSIONS D B ØC D ØA DIM A B C D MIN .120” .130” .047” 1.00” MAX .180” .230” .053” --- Case Outline: Surface Mount (SMS) B A A C D DIMENSIONS DIM MIN 0.172” A 0.180” B 0.022” C 0.002” D MAX 0.180” 0.280” 0.028” –– Dimensions prior to solder dipping NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0015B DOC