TAYCHIPST RS1G

RS1A THRU RS1M
50V-1000V
1.0A
SURFACE MOUNT FAST RECOVERY RECTIFIERS
Features
Glass Passivated Die Construction
Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current
Capability
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
SMA Weight: 0.064 grams (approx.)
SMB Weight: 0.093 grams (approx.)
Mounting Position: Any
Marking: Type Number
Absolute Maximum Ratings*
Symbol
IO
TA = 25°C unless otherwise noted
Parameter
Value
Units
1.0
A
30
A
1.19
9.5
105
W
mW/°C
°C/W
RθJA
Average Rectified Current
@ TA = 100°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient **
RθJC
Thermal Resistance, Junction to Case **
32
°C/W
Tstg
Storage Temperature Range
-55 to +150
°C
TJ
Operating Junction Temperature
-55 to +150
°C
if(surge)
PD
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Device
Units
1A
1B
1D
1G
1J
1K
1M
Peak Repetitive Reverse Voltage
50
100
200
400
600
800
1000
Maximum RMS Voltage
35
70
140
280
420
560
700
V
DC Reverse Voltage (Rated VR)
50
100
200
400
600
800
1000
V
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 125°C
Maximum Forward Voltage @ 1.0 A
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
E-mail: [email protected]
V
5.0
50
µA
µA
1.3
V
150
250
10
1 of 2
500
nS
pF
Web Site: www.taychipst.com
RS1A THRU RS1M
50V-1000V
1.0A
SURFACE MOUNT FAST RECOVERY RECTIFIERS
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
1.2
1.0
0.8
0.6
0.4
0.2
10
1.0
0.1
Tj = 25°C
IF Pulse Width: 300µs
0.01
0
25
50
75
100
125
150
0
175
30
Single Half-Sine-Wave
(JEDEC Method)
Tj = 150°C
20
10
0
1
10
0.8
1.2
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
IR, INSTANTANEOUS REVERSE CURRENT (µA)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0.4
1000
Tj = 125°C
100
10
Tj = 25°C
1.0
0.1
0
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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2 of 2
Web Site: www.taychipst.com