RS1A THRU RS1M 50V-1000V 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIERS Features Glass Passivated Die Construction Fast Recovery Time For High Efficiency Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak Ideally Suited for Automated Assembly Plastic Material: UL Flammability Classification Rating 94V-0 Mechanical Data Case: Molded Plastic Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band or Cathode Notch SMA Weight: 0.064 grams (approx.) SMB Weight: 0.093 grams (approx.) Mounting Position: Any Marking: Type Number Absolute Maximum Ratings* Symbol IO TA = 25°C unless otherwise noted Parameter Value Units 1.0 A 30 A 1.19 9.5 105 W mW/°C °C/W RθJA Average Rectified Current @ TA = 100°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient ** RθJC Thermal Resistance, Junction to Case ** 32 °C/W Tstg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature -55 to +150 °C if(surge) PD These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics TA = 25°C unless otherwise noted Parameter Device Units 1A 1B 1D 1G 1J 1K 1M Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 Maximum RMS Voltage 35 70 140 280 420 560 700 V DC Reverse Voltage (Rated VR) 50 100 200 400 600 800 1000 V Maximum Reverse Current @ rated VR TA = 25°C TA = 125°C Maximum Forward Voltage @ 1.0 A Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz E-mail: [email protected] V 5.0 50 µA µA 1.3 V 150 250 10 1 of 2 500 nS pF Web Site: www.taychipst.com RS1A THRU RS1M 50V-1000V 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIERS IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 1.2 1.0 0.8 0.6 0.4 0.2 10 1.0 0.1 Tj = 25°C IF Pulse Width: 300µs 0.01 0 25 50 75 100 125 150 0 175 30 Single Half-Sine-Wave (JEDEC Method) Tj = 150°C 20 10 0 1 10 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (µA) IFSM, PEAK FORWARD SURGE CURRENT (A) TT, TERMINAL TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.4 1000 Tj = 125°C 100 10 Tj = 25°C 1.0 0.1 0 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Forward Surge Current Derating Curve 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 50/100 ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit E-mail: [email protected] 2 of 2 Web Site: www.taychipst.com