SS32 THRU SS310 20V-100V 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Features For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC / 10 seconds at terminals Absolute Maximum Ratings* Symbol IO TA = 25°C unless otherwise noted Parameter Value Units 3.0 A 100 A 2.27 18 55 W mW/°C °C/W RθJA Average Rectified Current @ TA = 75°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient** RθJC Thermal Resistance, Junction to Case 17 °C/W Tstg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature -55 to +150 °C if(surge) PD These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Device mounted on FR-4 PCB 0.55 x 0.55" (14 x 14 mm). Electrical Characteristics TA = 25°C unless otherwise noted Parameter Device 32 33 34 35 36 Units 38 39 310 Peak Repetitive Reverse Voltage 20 30 40 50 60 80 90 100 V Maximum RMS Voltage 14 21 28 35 42 56 63 70 V DC Reverse Voltage (Rated VR) 20 30 40 50 60 80 90 100 0.5 Maximum Reverse Current TA = 25°C @ rated VR TA = 100°C Maximum Forward Voltage @ 3.0 A E-mail: [email protected] 20 500 10 750 1 of 2 V mA mA 850 mV Web Site: www.taychipst.com SS32 THRU SS310 20V-100V 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 PEAK FORWARD SURGE CURRENT. (A) 3 AVERAGE FORWARD CURRENT. (A) RESISTIVE OR INDUCTIVE LOAD SS35-SS310 SS32-SS34 2 1 PCB MOUNTED ON 0.6X0.6" (16X16mm) COPPER PAD AREAS 0 50 60 70 80 90 100 110 120 130 140 150 AT RATED TL 8.3ms Single Half Sine Wave JEDEC Method 130 110 90 70 50 160 1 10 o LEAD TEMPERATURE. ( C) 100 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL REVERSE CHARACTERISTICS FIG.3- TYPICAL FORWARD CHARACTERISTICS 20 40 TJ=125 0C TJ=125 0C 10 INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A) 10 PULSE WIDTH=300 S 1% DUTY CYCLE TJ=150 0C 1 TJ=25 0C 0.1 1 TJ=75 0C 0.1 0.01 TJ=25 0C SS32-SS34 SS35-SS36 SS39-SS310 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 SS32-SS34 SS35-SS310 0.001 0 1.6 FIG.5- TYPICAL JUNCTION CAPACITANCE TRANSCIENT THERMAL IMPEDANCE, oC/W JUNCTION CAPACITANCE.(pF) TJ=25 0C f=1.0MHz Vsig=50mVp-p 100 SS32-SS34 SS35-SS36 SS39-SS310 80 100 120 140 10 100 100 10 1 0.1 0.01 0.1 1 10 100 t, PULSE DURATION, (sec) REVERSE VOLTAGE. (V) E-mail: [email protected] 60 FIG.6- TYPICAL TRANSIENT TERMAL IMPDANCE 1000 1 40 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FORWARD VOLTAGE. (V) 10 0.1 20 2 of 2 Web Site: www.taychipst.com