TA8258HQ TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8258HQ Dual Audio Power Amplifier The TA8258HQ is dual audio power amplifier for consumer applications. This IC provides an output power of 20 watts per channel (at VCC = 37 V, f = 1kHz, THD = 10%, RL = 8 Ω). It is suitable for power amplifier of music center. Features • High output power: Pout = 20 W/channel (Typ.) • Low noise: Vno = 0.14 mVrms (Typ.) Weight: 4.04 g (typ.) (VCC = 37 V, RL = 8 Ω, f = 1 kHz, THD = 10%) (VCC = 37 V, RL = 8 Ω, GV = 34dB, Rg = 10 kΩ, BW = 20 Hz~20 kHz) • Very few external parts. • Built in audio muting circuit. • Built in thermal shut down protector circuit. • Built in output shifted to GND protection circuit. (AC short) • Available for using same PCB layout with: TA8200AH, TA8211AH, TA8216H • Operation supply voltage range (Ta = 25°C) : VCC (opr) = 15~42 V The TA8258HQ is plated with lead-free lead finishes, but the silicon pellet is attached to a heatsink with lead-containing solder paste. About solderability, following conditions were confirmed • Solderability (1) Use of Sn-63Pb solder Bath · solder bath temperature = 230°C · dipping time = 5seconds · the number of times = once · use of R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder Bath · solder bath temperature = 245°C · dipping time = 5seconds · the number of times = once · use of R-type flux 1 2004-04-06 TA8258HQ Block Diagram VCC 6 Ripple Filter IN1 4 9 VCC IN1 OUT1 AMP1 5 3 1 R 400 Ω Pre-GND 20 kΩ 400 Ω 20 kΩ RL C PW-GND 10 C RL R AMP2 IN2 7 OUT2 2 IN2 Mute. TC Mute 8 11 12 Application Information 1. Voltage gain The closed loop voltage gain is determined by R1, R2. Input Output 4/2 R + R2 G V = 20log 1 (dB) R2 5/1 20 kΩ + 400 Ω = 20log 400 Ω = 34 (dB) 7/12 R2 R1 400 Ω 20 kΩ Figure 1 G V = 20log R1 + R 2 + R 3 (dB) R2 + R3 When R3 = 220 Ω GV ∼ − 30 (dB) is given. Input Output 4/2 R3 5/1 7/12 R2 R1 400 Ω 20 kΩ Figure 2 Toshiba has confirmed that the GV (min) is approximately 28 (dB) on a regular printed circuit board. However, if the value of R2 + R3 is larger, the feedback voltage increases and oscillation will start. Determine the value of R2 + R3 to ensure proper startup behavior under actual usage conditions. 2 2004-04-06 TA8258HQ 2. Muting This product has an excellent muting system. Audio muting This IC is possible to make audio muting operation by using 11 pin muting terminal. Figure 3 shows the equivalent circuit in the muting circuit. By reducing the voltage of 11 pin to 2.8 V or less, Q1 will be ON. Also the base voltage of Q2 in the differential circuit that has Q2 and Q3 will be down. When Q2 is OFF, I2 and I5 dummy circuits will be operated, and it will shut down the input. However, the bias circuit is operating after muting, and it takes power supply current at no signal. 8 pin is the capacitor terminal for reducing the pop noise, and it can make the time constant longer by inserting the capacitor externally. If 11 pin is not used, connect 11 pin and 8 pin, then set the voltage abode 4 V. (2) IC internal muting at VCC OFF When VCC = 8 V or less at VCC off, the detection circuit at VCC off is operated. And the base voltage of Q1 is reduced and the muting is operated in IC. (1) Dummy amp. Main amp. 9 VCC I2 I3 The detection circuit at VCC → OFF Q2 Q3 100 Ω 11 I5 30 kΩ Q1 Mute I4 Q5 I6 Q6 The reference voltage is equal. 8 Q4 I7 Q7 Q10 Q8 Q9 Q11 20 kΩ OUT 2/4 1/5 IN NF Mute. TC 7/12 400 Ω I1 30 kΩ Reference voltage Figure 3 3. The Mounting Place of an Integrated Circuit This IC cannot withstand the strong electromagnetic fields generated by a CRT. These are likely to cause the device to exhibit malfunctions such as leakage. Please ensure that the IC is kept away from CRT. 4. Preventive Measures Against Oscillation To prevent oscillation, it is advisable to use capacitors made of polyester film, which have low temperature and frequency fluctuation characteristics, as C. The resistance R in series with C performs phase correction at high frequencies and improves the oscillation allowance. (1) Capacitor rating and type (2) PCB layout Note 1: Since the oscillation allowance varies according to the PCB layout, it is recommended that a standard Toshiba PCB be used as a reference for design. 3 2004-04-06 TA8258HQ 5. Heat-sink Be aware of the heat-sink capacity. Use a heat-sink that has high heat conduction. Note 2: Please connected a Heat-sink to GND potential, otherwise THD may deteriorate. 4 2004-04-06 TA8258HQ Standard PCB 12 1 IN-2 GND IN-1 TA8200AH/11AH/16H/58H TOSHIBA OUT2 OUT1 VCC (bottom view) 5 2004-04-06 TA8258HQ Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VCC 50 V Output current (Peak/ch) IO (peak) 3.5 A Power dissipation PD (Note 3) Supply voltage 25 W Operation temperature Topr −20 to 75 °C Storage temperature Tstg −55 to 150 °C Note 3: Derated above Ta = 25°C in the proportion of 200 mW/°C. Electrical Characteristics (unless otherwise specified VCC = 37 V, RL = 8 Ω, Rg = 600 Ω, f = 1 kHz, Ta = 25°C) Characteristics Symbol Test Circuit ICCQ ⎯ Pout (1) Min Typ. Max Unit Vin = 0 ⎯ 75 130 mA ⎯ THD = 10% 17 20 ⎯ Pout (2) ⎯ THD = 1% ⎯ 15 ⎯ Quiescent current Output power Test Condition THD ⎯ Pout = 2 W Voltage gain GV ⎯ Vout = 0.775 Vrms (0dBm) Input resistance RIN ⎯ Ripple rejection ratio R.R. ⎯ fripple = 100 Hz Vripple = 0.775 Vrms (0dBm) Output noise voltage Vno ⎯ Rg = 10 kΩ, BW = 20 Hz~20 kHz Cross talk C.T. ⎯ Mute on voltage Mute-on Mute off voltage W ⎯ 0.05 0.2 % 32.5 34.0 35.5 dB ⎯ 30 ⎯ kΩ −48 −60 ⎯ dB ⎯ 0.14 0.3 mVrms Rg = 10 kΩ, Vout = 0.775 Vrms (0dBm) −50 −60 ⎯ dB ⎯ Mute on GND ⎯ 1.4 V Mute-off ⎯ Mute off 3.7 ⎯ 10 V ATT ⎯ Vout = 0.775 Vrms → Mute −50 −60 ⎯ dB Total harmonic distortion Mute ATT ⎯ Typ. DC Voltage of Each Terminal (VCC = 28 V, Ta = 25°C) Terminal No. 1 2 3 4 5 6 7 8 9 10 11 12 DC voltage (V) 2.5 2.8 GND 2.8 2.5 12.5 19.4 5.1 VCC GND 4.8 19.4 6 2004-04-06 TA8258HQ Test Circuit IN1 1000 µF OUT1 AMP1 5 3 1 400 Ω 20 kΩ Pre-GND 400 Ω PW-GND 10 20 kΩ AMP2 OUT2 IN2 Mute. TC Mute 8 11 *1 12 10 µF 2.2 µF 2 1000 µF 7 RL 0.12 µF 0.12 µF 4 2.2 Ω 47 µF 47 µF 2.2 µF 9 2.2 Ω 47 µF 6 Ripple Filter VCC RL 1000 µF Vth ∼ − 2.8 V *1: The capacitor for reducing POP noise at mute ON. 7 2004-04-06 TA8258HQ THD – Pout THD – Pout 100 THD (%) VCC = 37 V 50 R = 8 Ω L 30 Filter 100: ~30 k 1 k: 400~30 k 10 k: 400~ 10 5 3 Total harmonic distortion Total harmonic distortion THD (%) 100 1 0.5 0.3 f = 10 kHz 0.1 100 Hz 0.05 1 kHz 0.03 0.1 1 0.3 0.5 3 5 30 50 10 50 30 RL = 8 Ω f = 1 kHz Filter: 400~30 k 10 5 3 VCC = 15 V 0.1 0.05 0.03 0.3 0.5 Output power POUT (W) 1 3 RL = 8 Ω Pout = 1 W VCC = 37 V Filter ~30 k (f = 20~800) 400~30 k (f = 1 k~2 k) 400~80 k (f = 4 k~6 k) 400~ (f = 8 k~40 k) (dB) 0.1 OUT2 0.03 OUT1 0.01 30 100 300 RL = 8 Ω Vout = 0.775 Vrms VCC = 37 V 40 0.3 0.05 35 30 25 20 1k Frequency 3k 10k 30k 15 20 30 100k 100 300 f (Hz) R.R. – f 3k Rg = 620 Ω RL = 8 Ω −20 Vripple = 0.775Vrms VCC = 37 V R.R. (dB) −10 −30 −40 OUT1 −50 OUT2 −60 −70 30 100 300 1k Frequency 10k 30k 100k f (Hz) R.R. – Rg −30 Ripple rejection ratio R.R. (dB) Ripple rejection ratio 1k Frequency 0 −80 100 GV 0.5 30 50 45 Voltage gain (%) THD Total harmonic distortion 1 10 GV – f THD – f 3 5 Output power POUT (W) 10 5 42 0.5 0.3 0.1 100 37 1 3k 10k 30k f (Hz) Vripple = 0.775Vrms VCC = 37 V −40 −50 OUT2 −60 OUT1 −70 −80 100k fripple = 100 Hz RL = 8 Ω 30 100 0.3 1k 3k Signal source resistance 8 10k Rg 30 100k (Ω) 2004-04-06 TA8258HQ C.T. – f C.T. – Rg 0 Rg = 620 kΩ RL = 8 Ω VCC = 37 V f = 1 kHz RL = 8 Ω VCC = 37 V Vout = 0.775Vrms −40 (dB) −20 C.T. −30 −40 Cross talk C.T. (dB) −10 Cross talk −30 −50 OUT2 → OUT1 −60 −50 −60 OUT2 → OUT1 OUT1 → OUT2 −70 −70 −80 OUT1 → OUT2 30 100 300 1k 3k Frequency 10k 30k −80 100k 100 30 f (Hz) 300 Vno – Rg (W) 25 Pout 30 20 400 300 Output power (mVrms) VNO Output noise voltage RL = 8 Ω VCC = 37 V B.W = 20Hz~20kHz 500 OUT2 200 OUT1 30 100 300 1k 10k 3k Signal source resistance Rg 30k f = 1 kHz RL = 8 Ω THD = 10 % 15 10 0 10 100k 5 10 (Ω) 25 30 VCC 35 45 (V) f = 1 kHz RL = 8 Ω 42 V 20 VOUT Power dissipation ICCQ 40 VOUT 40 PD (W) (V) VCC = 37 V Vin = 0 20 40 25 Output DC voltage (mA) 20 PD – POUT 60 RL = 8 Ω ICCQ 15 Supply voltage ICCQ, VOUT – VCC 120 Quiescent current (Ω) 5 100 60 Rg 100k Pout – VCC 600 80 30k 35 700 100 10k 3k Signal source resistance 800 0 1k 20 37 V 15 10 5 15 V 0 0 10 20 30 Supply voltage 40 50 0 0 0 60 VCC (V) 5 10 15 Output power Pout 9 20 25 (W) 2004-04-06 TA8258HQ ATT – Vmute THD – Ta 10 −20 −40 −60 −80 8 1 2 3 Mute control voltage Vmute THD Vout = 0.775Vrms VCC = 37 V 0.2 Total harmonic distortion Mute ATT (dB) 0 (%) f = 1 kHz RL = 8 Ω 0.1 0.05 OUT2 0.03 OUT1 0.01 −40 4 RL = 8 Ω VCC = 37 V f = 1 kHz Pout = 2 W −20 (V) 0 20 40 Ambient temperature 60 Ta 80 100 (°C) ICCQ – Ta R.R. – Ta 0 (mA) Vripple = 0.775 Vrms VCC = 37 V fripple = 100 Hz −30 −40 −50 OUT2 −60 OUT1 −70 −20 0 80 ICCQ −20 −80 −40 VCC = 37 V RL = 8 Ω 100 RL = 8 Ω Quiescent current Ripple rejection ratio R.R. (dB) Rg = 620 Ω −10 20 40 Ambient temperature 60 Ta 80 60 40 20 0 −40 100 (°C) −20 0 20 40 Ambient temperature 60 Ta 80 100 (°C) PD MAX – Ta Allowable power dissipation PD MAX (w) 30 1: INFINITE HEAT SINK 25 2: 4.1°C/W Aℓ HEAT SINK 1 3: 9.5°C/W Aℓ HEAT SINK 20 2 15 10 3 5 0 0 25 50 75 100 Ambient temperature 125 Ta 150 175 (°C) 10 2004-04-06 TA8258HQ Package Dimensions Weight: 4.04 g (typ.) 11 2004-04-06 TA8258HQ RESTRICTIONS ON PRODUCT USE 030619EBF • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document are subject to the foreign exchange and foreign trade laws. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. • This product generates heat during normal operation. However, substandard performance or malfunction may cause the product and its peripherals to reach abnormally high temperatures. The product is often the final stage (the external output stage) of a circuit. Substandard performance or malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the product. 12 2004-04-06