TA8277H TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8277H Max Power 43 W BTL × 4 ch Audio Power IC The TA8277H is 4 ch BTL audio power amplifier for car audio application. This IC can generate more high power: POUTMAX = 43 W as it is included the pure complementary PNP and NPN transistor output stage. It is designed low distortion ratio for 4 ch BTL audio power amplifier, built-in stand-by function and muting function. Additionally, the AUX amplifier and various kind of protector for car audio use is built-in. Features · Weight: 7.7 g (typ.) High power : POUTMAX (1) = 43 W (typ.) (VCC = 14.4 V, f = 1 kHz, JEITA max, RL = 4 Ω) : POUTMAX (2) = 40 W (typ.) (VCC = 13.7 V, f = 1 kHz, JEITA max, RL = 4 Ω) : POUT (1) = 28 W (typ.) (VCC = 14.4 V, f = 1 kHz, THD = 10%, RL = 4 Ω) : POUT (2) = 24 W (typ.) (VCC = 13.2 V, f = 1 kHz, THD = 10%, RL = 4 Ω) · Low distortion ratio: THD = 0.02% (typ.) · Low noise: VNO = 0.10 mVrms (typ.) · Built-in stand-by switch function (pin 4) · Built-in muting function (pin 22) · Built-in AUX amplifier from single input to 4 channels output (pin 16) · Built-in various protection circuit (VCC = 13.2 V, f = 1 kHz, POUT = 5 W, RL = 4 Ω) (VCC = 13.2 V, Rg = 0 Ω, GV = 26dB, BW = 20 Hz~20 kHz) : · Thermal shut down, over voltage, out to GND, out to VCC, out to out short Operating supply voltage: VCC (opr) = 9~18 V 1 2002-02-13 TA8277H 20 VCC1 6 VCC2 OUT1 (+) C1 11 PW-GND1 8 OUT2 (+) 12 16 15 3 17 PW-GND3 18 RL 19 21 IN4 PW-GND4 24 OUT4 (-) RL 23 13 MUTE2 MUTE C4 22 R1 25 C8 4 C7 STBY 10 R2 RIP C2 PRE-GND RL IN3 OUT4 (+) 14 5 AUX IN OUT3 (-) C1 7 PW-GND2 2 OUT3 (+) C1 RL IN2 OUT2 (-) C6 9 IN1 OUT1 (-) C1 C3 1 TAB C5 Block Diagram : PRE-GND : PW-GND 2 2002-02-13 TA8277H Caution and Application Method (Description is made only on the single channel.) 1. Voltage Gain Adjustment This IC has no NF (negative feedback) terminals. Therefore, the voltage gain can’t adjusted, but it makes the device a space and total costs saver. Amp. 2A Amp. 1 Input Amp. 2B Figure 1 Block Diagram The voltage gain of Amp.1 : GV1 = 0 dB The voltage gain of Amp.2A, B : GV2 = 20 dB The voltage gain of BLT Connection : GV (BTL) = 6 dB Therefore, the total voltage gain is decided by expression below. GV = GV1 + GV2 + GV (BTL) = 0 + 20 + 6 = 26 dB 2. Stand-by SW Function (pin 4) By means of controlling pin 4 (stand-by terminal) to high and low, the power supply can be set to ON and OFF. The threshold voltage of pin 4 is set at about 3VBE (typ.), and the power supply current is about 2 mA (typ.) at the stand-by state. Power VSB (V) ON OFF 0~1.5 OFF ON 3~VCC ON Power OFF 4 10 kW » 2VBE to BIAS CUTTING CIRCUIT Control Voltage of pin 4: VSB Stand-by VCC Figure 2 With pin 4 set to High, Power is turned ON Adjustage of Stand-by SW (1) (2) Since VCC can directly be controlled to ON or OFF by the microcomputer, the switching relay can be omitted. Since the control current is microscopic, the switching relay of small current capacity is satisfactory for switching 3 2002-02-13 TA8277H RELAY Large current capacity switch BATTERY BATTERY VCC FROM MICROCOMPUTER VCC – Conventional Method – Small current capacity switch BATTERY DIRECTLY FROM MICROCOMPUTER BATTERY Stand-By VCC Stand-By VCC – Stand-by Switch Method – Figure 3 3. Muting Function (pin 22) By means of controlling pin 22 less than 0.5 V, it can make the audio muting condition. The muting time constant is decided by R1, C4 and C8 and these parts is related the pop noise at power ON/OFF. The series resistance; R1 must be set up less than 5 kW. The muting function have to be controlled by a transistor, FET and m-COM port which has IMUTE > 50 mA ability. ATT – VMUTE 0 25 C7 I (20 mA) IMUTE (OFF) Mute attenuation ATT (dB) -10 R1 C4 22 A IMUTE VMUTE R1 = 5 kW -20 -30 -40 R1 = 2.2 kW -50 -60 -70 VCC = 13.2 V Po = 10 W -80 RL = 4 W f = 1 kHz -90 -100 1.2 1.4 1.6 1.8 2.0 2.2 Point A voltage: VMUTE Figure 4 Muting Function Figure 5 4 2.4 2.6 2.8 (V) Mute Attenuation - VMUTE (V) 2002-02-13 TA8277H 4. AUX Input (pin 16) 20dB AMP. The pin 16 is for input terminal of AUX amplifier. The total gain is 0dB by using of AUX amplifier. Therefore, the m-COM can directly drive the AUX amplifier. BEEP sound or voice synthesizer signal can be input to pin 16 directly. When AUX function is not used, this pin must be connected to PRE-GND (pin 13) via a capacitor. IN OUT (+) OUT (-) AUX AMP m-COM AUX-IN 16 -20dB Figure 6 5 AUX Input 2002-02-13 TA8277H Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VCC (surge) 50 V DC supply voltage VCC (DC) 25 V Operation supply voltage VCC (opr) 18 V Output current (peak) IO (peak) Power dissipation PD (Note1) Peak supply voltage (0.2 s) 9 A 125 W Operation temperature Topr -40~85 °C Storage temperature Tstg -55~150 °C Note 1: Package thermal resistance qj-T = 1°C/W (typ.) (Ta = 25°C, with infinite heat sink) Electrical Characteristics (unless otherwise specified, VCC = 13.2 V, f = 1 kHz, RL = 4 W, Ta = 25°C) Characteristics Symbol Test Circuit ICCQ ¾ POUT MAX (1) Min Typ. Max Unit VIN = 0 ¾ 200 400 mA ¾ VCC = 14.4 V, max Power ¾ 43 ¾ POUT MAX (2) ¾ VCC = 13.7 V, max Power ¾ 40 ¾ POUT (1) ¾ VCC = 14.4 V, THD = 10% ¾ 28 ¾ POUT (2) ¾ THD = 10% 22 24 ¾ THD ¾ POUT = 5 W ¾ 0.02 0.2 Voltage gain GV ¾ VOUT = 0.775 Vrms (0dBm) 24 26 28 Voltage gain ratio DGV ¾ VOUT = 0.775 Vrms (0dBm) -1.0 0 1.0 VNO (1) ¾ Rg = 0 W, DIN45405 ¾ 0.12 ¾ VNO (2) ¾ Rg = 0 W, BW = 20 Hz~20 kHz ¾ 0.10 0.35 Ripple rejection ratio R.R. ¾ frip = 100 Hz, Rg = 620 W Vrip = 0.775 Vrms (0dBm) 40 50 ¾ dB Cross talk C.T. ¾ Rg = 620 W VOUT = 0.775 Vrms (0dBm) ¾ 65 ¾ dB VOFFSET ¾ ¾ -150 0 +150 mV Input resistance RIN ¾ ¾ ¾ 90 ¾ kW Stand-by current ISB ¾ Stand-by condition ¾ 2 10 mA VSB H ¾ Power: ON 3.0 ¾ VCC VSB L ¾ Power: OFF 0 ¾ 1.5 VM H ¾ Mute: OFF VM L ¾ Mute: ON, R1 = 10 kW 0 ¾ 0.5 V ATT M ¾ Mute: ON, VOUT = 7.75 Vrms (20dBm) at Mute: OFF. 80 90 ¾ dB Quiescent current Output power Total harmonic distortion Output noise voltage Output offset voltage Stand-by control voltage Mute control voltage Mute attenuation (Note2) Test Condition W % dB mVrms V ¾ Open Note 2: Muting function have to be controlled by open and low logic, which logic is a transistor, FET and m-COM port of IMUTE > 50 mA ability. This means than the mute control terminal : pin 22 must not be pulled-up. 6 2002-02-13 TA8277H 6 VCC2 OUT1 (+) 0.22 mF C1 11 PW-GND1 8 OUT2 (+) C1 12 C6 16 C1 15 14 3 17 PW-GND3 18 RL 19 21 IN4 PW-GND4 24 OUT4 (-) RL 23 22 R1 5 kW MUTE 25 C8 0.1 mF MUTE2 4 C7 0.047 mF STBY 10 R2 10 kW RIP C4 33 mF 13 C2 10 mF PRE-GND RL IN3 OUT4 (+) C1 5 AUX IN OUT3 (-) 0.22 mF 7 PW-GND2 2 OUT3 (+) 0.22 mF RL IN2 OUT2 (-) 0.22 mF 9 IN1 OUT1 (-) 0.22 mF C3 0.1 mF 20 VCC1 3900 mF 1 TAB C5 Test Circuit : PRE-GND : PW-GND 7 2002-02-13 TA8277H T.H.D – POUT T.H.D – POUT 100 100 VCC = 13.2 V 50 50 RL = 4 W 1 ch drive 10 (%) 10 5 T.H.D 5 3 Total harmonic distortion Total harmonic distortion (%) 30 T.H.D 30 f = 10 kHz 0.5 0.3 0.1 f = 1 kHz RL = 4 W 1 ch drive 13.2 V 3 VCC = 9.0 V 1 0.5 0.3 16.0 V 0.1 1 kHz 0.05 0.05 0.03 0.03 100 Hz 0.01 0.1 0.3 0.5 1 3 Output power 5 10 POUT 30 50 0.01 0.1 100 (W) 0.3 0.5 ICCQ – VCC 3 5 10 POUT 30 50 100 (W) T.H.D – f 10 400 VCC = 13.2 V RL = 4 W POUT = 5 W T.H.D (mA) (%) RL = ¥ ICCQ 300 1 Total harmonic distortion Quiescent current 1 Output power 200 100 0.01 10 0 0 10 20 Power supply voltage VCC 0.1 30 (V) 100 1k Frequency f 8 10 k 100 k (Hz) 2002-02-13 TA8277H VNO – Rg R.R. – f 0 VCC = 13.2 V RL = 4 W BW = ~20 k 250 VCC = 13.2 V Ripple rejection ratio R.R. (dB) Output noise voltage VNO (mVrms) 300 200 150 100 50 0 100 1k 10 k Singnal source resistance Rg Rg = 620 W -20 100 k RL = 4 W -30 -40 -50 -60 -70 0 Vrip = 0.775 Vrms (0dBm) -10 0 100 (9) 1k Frequency f C.T. – f (OUT1) 0 VCC = 13.2 V C.T. (dB) Rg = 620 W -20 VOUT = 0.775 Vrms (0dBm) -10 RL = 4 W -30 Cross talk C.T. (dB) Cross talk VCC = 13.2 V VOUT = 0.775 Vrms (0dBm) -10 -40 OUT1 ® OUT3, 4 OUT1 ® OUT4 -50 Rg = 620 W -20 RL = 4 W -30 -40 OUT2 ® OUT3, 4 -50 -60 OUT2 ® OUT1 -60 0 100 1k Frequency f 10 k -70 100 k 0 100 (Hz) C.T. – f (OUT3) 10 k 100 k 10 k 100 k (Hz) C.T. – f (OUT4) 0 VCC = 13.2 V VCC = 13.2 V VOUT = 0.775 Vrms (0dBm) -10 C.T. (dB) Rg = 620 W -20 RL = 4 W -30 -40 OUT3 ® OUT1, 2 -50 OUT3 ® OUT1, 2 OUT3 ® OUT4 OUT3 ® OUT4 -60 0 100 VOUT = 0.775 Vrms (0dBm) -10 Cross talk C.T. (dB) 1k Frequency f 0 Cross talk OUT2 ® OUT3, 4 OUT1 ® OUT2, 3 OUT1 ® OUT2 -70 100 k C.T. – f (OUT2) 0 -70 10 k (Hz) Rg = 620 W -20 RL = 4 W -30 -40 OUT4 ® OUT1, 2 -50 OUT4 ® OUT3 -60 1k Frequency f 10 k -70 100 k (Hz) 0 100 1k Frequency f 9 (Hz) 2002-02-13 TA8277H GV – f PD – POUT 40 70 (W) 20 15 10 VCC = 13.2 V 50 40 16 V 13.2 V 30 20 f = 1 kHz 9V RL = 4 W 5 PD GV 25 60 Power dissipation (dB) 30 Voltage gain 35 10 RL = 4 W VOUT = 0.775 Vrms (0dBm) 0 0 0 100 1k Frequency f 10 k 100 k (Hz) 0 5 10 Output power 15 20 25 POUT/ch (C) Allowable power dissipation PD MAX (W) PD MAX – Ta 120 ① INFINITE HEAT SINK RqJC = 1°°C/W 100 ② HEAT SINK (RqHS = 3.5°°C/W) RqJC + RqHS = 4.5°°C/W ③ NO HEAT SINK 80 RqJA = 39°°C/W ① 60 40 20 ② ③ 0 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 10 2002-02-13 TA8277H Package Dimensions Weight: 7.7 g (typ.) 11 2002-02-13 TA8277H RESTRICTIONS ON PRODUCT USE 000707EBF · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · This product generates heat during normal operation. However, substandard performance or malfunction may cause the product and its peripherals to reach abnormally high temperatures. The product is often the final stage (the external output stage) of a circuit. Substandard performance or malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the product. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 12 2002-02-13