SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR MID-94A3L Description Package Dimensions Unit : mm The MID-94A3L is a TWIN NPN silicon phototransistor mounted in a special dark plastic side looking package and suitable for the IRED (940nm) Type. 3.00 ± .08 (.118±.003) 5.00 ± .08 (.197±.003) C .80 C(.032) 2.50 ± .08 .25 ± 1.00 (.010±.040) 4.77 ± .20 (.188±.008) RADIANT SENSITIVE AREA 2.90 ± .12 (.114±.005) 1.77 ± .20 (.070±.008) 1.00 ± .12 (.040±.005) 13.00 MIN. (.511) .61 ±.01 (.020) .50 TYP. (.020) 1.27 ± 0.01 (.050) 3 Features 1 l Wide range of collector current l Low cost plastic package 10.00 MIN. (.040) 3.00MIN (.118) 2 2.54 (.100) 1 2.54 (.100) 2 0.61 (.020) 3PLACES- 0.5 ± .05 ( .020 ± .002 ) 1 EMITTER (PTR A) 2 COLLECTOR(COM) 3 EMITTER (PTR B) 3 NOTES : 1. All dimensions are in millimeters.(inches). 2. PTR die vertical & horizontal placement tolerance is ± 0.12 mm from the center line. Allowed die rotation must be 5 or less. 3. Protruded resin under flange is 1.5mm (.059") max. 4. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55oC to +100oC Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-94A3L Optical-Electrical Characteristics @ TA=25oC Parameter Test Conditions Collector-Emitter Ic=0.1mA Breakdown Voltage Ee=0 Emitter-Collector Ie=0.1mA Breakdown Voltage Ee=0 Collector-Emitter Ic=0.5 mA Symbol Min. Typ . V(BR)CEO 30 V V(BR)ECO 5 V VCE(SAT) 0.1 Max. Unit 0.4 V 2 Saturation Voltage Ee=0.1mW/cm Rise Time VR =5V, RL=1KΩ Tr 10 Fall Time IC=1mA Tf 10 Collector Dark VCE=10V ICEO Current Ee=0 On State Collector VCE=5V µS 100 IC(ON) 0.16 0.4 nA mA 2 Current Ee=0.1mW/cm Ic Normalized Collector Current Iceo-Collector Dark Current -µA Typical Optical-Electrical Characteristic Curves 1000 100 10 1 0.1 0.01 0.001 0 40 80 Vce = 5 Ee = 0.1 3.5 3.0 V mW/cm2 @λ= 940 2.5 nm 2.0 1.5 1.0 0.5 0.0 120 -75 TA - Ambient Temperature -oC FIG.1 COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE -25 25 75 125 TA - Ambient Temperature -oC FIG.2 NORMALIZED COLLECTOR CURRENT VS AMBIENT TEMPERATURE 20 2.0 Vcc = 5 V VRL= 1 V F = 100 Hz PW = 1 ms 16 Relative Collector Current (mA) Tr Tf - Rise and Fall Time - mS 4.0 12 8 4 0 Vce = 5V 1.6 1.2 0.8 0.4 0.0 0 2 4 6 8 10 RL - Load Resistance - KW FIG.3 RISE AND FALL TIME VS LOAD RESISTANCE 0 0.1 0.2 0.3 0.4 0.5 0.6 Ee - Irradiance - mW/cm2 FIG.4 RELATIVE COLLECTOR CURRENT VS IRRADIANCE Unity Opto Technology Co., Ltd. 02/04/2002