UOT MID

SIDE LOOK PACKAGE
NPN PHOTOTRANSISTOR
MID-94A3L
Description
Package Dimensions
Unit : mm
The MID-94A3L is a TWIN NPN silicon phototransistor
mounted in a special dark plastic side looking package
and suitable for the IRED (940nm) Type.
3.00 ± .08
(.118±.003)
5.00 ± .08
(.197±.003)
C .80
C(.032)
2.50 ± .08
.25 ± 1.00
(.010±.040)
4.77 ± .20
(.188±.008)
RADIANT SENSITIVE AREA
2.90 ± .12
(.114±.005)
1.77 ± .20
(.070±.008)
1.00 ± .12
(.040±.005)
13.00 MIN.
(.511)
.61 ±.01
(.020)
.50 TYP.
(.020)
1.27 ± 0.01
(.050)
3
Features
1
l
Wide range of collector current
l
Low cost plastic package
10.00 MIN.
(.040)
3.00MIN
(.118)
2
2.54
(.100)
1
2.54
(.100)
2
0.61
(.020)
3PLACES- 0.5 ± .05
( .020 ± .002 )
1
EMITTER (PTR A)
2
COLLECTOR(COM)
3 EMITTER (PTR B)
3
NOTES :
1. All dimensions are in millimeters.(inches).
2. PTR die vertical & horizontal placement tolerance is ± 0.12 mm from the center line.
Allowed die rotation must be 5 or less.
3. Protruded resin under flange is 1.5mm (.059") max.
4. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25oC
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
o
o
Operating Temperature Range
-55 C to +100 C
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
MID-94A3L
Optical-Electrical Characteristics
@ TA=25oC
Parameter
Test Conditions
Collector-Emitter
Ic=0.1mA
Breakdown Voltage
Ee=0
Emitter-Collector
Ie=0.1mA
Breakdown Voltage
Ee=0
Collector-Emitter
Ic=0.5 mA
Symbol
Min.
Typ .
V(BR)CEO
30
V
V(BR)ECO
5
V
VCE(SAT)
0.1
Max.
Unit
0.4
V
2
Saturation Voltage
Ee=0.1mW/cm
Rise Time
VR =5V, RL=1KΩ
Tr
10
Fall Time
IC=1mA
Tf
10
Collector Dark
VCE=10V
ICEO
Current
Ee=0
On State Collector
VCE=5V
µS
100
IC(ON)
0.16
0.4
nA
mA
2
Current
Ee=0.1mW/cm
Ic Normalized Collector Current
Iceo-Collector Dark Current -µA
Typical Optical-Electrical Characteristic Curves
1000
100
10
1
0.1
0.01
0.001
0
40
80
Vce = 5
Ee = 0.1
3.5
3.0
V
mW/cm2
@λ= 940
2.5
nm
2.0
1.5
1.0
0.5
0.0
120
-75
TA - Ambient Temperature -oC
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
-25
25
75
125
TA - Ambient Temperature -oC
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
20
2.0
Vcc = 5 V
VRL= 1 V
F = 100 Hz
PW = 1 ms
16
Relative Collector Current
(mA)
Tr Tf - Rise and Fall Time - mS
4.0
12
8
4
0
Vce =
5V
1.6
1.2
0.8
0.4
0.0
0
2
4
6
8
10
RL - Load Resistance - KW
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
0
0.1
0.2
0.3
0.4
0.5
0.6
Ee - Irradiance - mW/cm2
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
Unity Opto Technology Co., Ltd.
02/04/2002