UOT MID

SIDE LOOK PACKAGE
NPN PHOTOTRANSISTOR
MID-14H22
Description
Package Dimensions
Unit: mm ( inches )
The MID-14H22 is a NPN silicon phototransistor mounted in a lensed ,black plastic and side looking package.
4.00 ± .08
(.158±.003)
1.22
.048
4.12
(.162)
Features
l
Wide range of collector current
l
Lensed for high sensitivity
l
Low cost plastic package
l
For 850nm IR
1.80
1.80
(.071)
(.071)
φ 1.50
(.059)
1.10 ±.80
(.043±.032)
1.50 ± .08
(.059±.032)
0.75 ± 0.8
(.030±.032)
1.66 ± .08
(.065±.003)
1.31 ± .12
(.052±.005)
60°
0.50 TYP.
(.020)
14.30MIN
(.563)
.80 ± .02
(.031±.001)
1.00MIN
(.039)
2.54
(.100)
E
C
Notes :
1. All dimensions are in millimeters. (inches).
2. LED die vertical & horizontal placement tolerance is ± 0.12 mm.
3. Protruded resin under flange is 1.5 mm (.059") max.
4. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
o
o
o
o
Operating Temperature Range
-55 C to +100 C
Storage Temperature Range
-55 C to +100 C
Lead Soldering Temperature
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
11/14/2000
MID-14H22
Optical-Electrical Characteristics
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark
Current
On State Collector
Current
Test Conditions
Ic=0.1mA
Ee=0
Ic=0.1mA
Ee=0
Ic=0.5 mA
Symbol
V(BR)CEO
Min.
30
V(BR)ECO
5
Ee=0.1mW/cm
VR =30V , 0=1KΩ
IC=1mA
VCE=10V
µS
15
15
100
Ee=0.1mW/cm
VCE=5V
nA
IC(ON)
0.25
mA
2
1
0.1
0.01
0.001
0
40
80
120
Vcc = 5 V
VRL= 1 V
F = 100 Hz
PW = 1 ms
80
40
0
4
6
8
10
Vce =5
V
Ee =0.1 mW/cm2
@λ= 940 nm
-75
5
-25
25
75
125
Vce = 5 V
4
3
2
1
0
0
RL - Load Resistance - KΩ
Fig.3 RISE AND FALL TIME
VS LOAD RESISTANCE
Relative Sensitivity
4
3.5
3
2.5
2
1.5
1
0.5
0
TA - Ambient Temperature -oC
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
TA - Ambient Temperature - oC
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
2
IC Normalized Collector Current
Ee=0.1mW/cm
Relative Collector Current
Iceo-Collector Dark Current -µA
Tr Tf Rise and Fall Time - µS
V
2
10
0
0.4
Tr
Tf
ICEO
100
120
Unit
V
V
VCE(SAT)
1000
160
Max.
2
Typical Optical-Electrical Characteristic Curves
200
Typ .
1
2
3
4
5
6
Ee - Irradiance - mW/cm2
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
0° 10° 20°
30°
40°
1.0
0.9
50°
60°
70°
80°
90°
0.8
0.5 0.3 0.1
0.2 0.4 0.6
FIG.5 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
11/14/2000