UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode conditions. The UTC 13N50 is ideally suitable for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge topology. FEATURES * RDS(ON) =0.48Ω @VGS = 10 V * Ultra low gate charge (typical 43 nC ) * Low reverse transfer Capacitance ( CRSS = typical 20pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13N50L-TA3-T 13N50G-TA3-T 13N50L-TF3-T 13N50G-TF3-T 13N50L-TA3-T (1) Packing Type Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Tube Tube (1) T: Tube (2) Package Type (2) TA3: TO-220, TF3: TO-220F (3) Lead Plating (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Packing 1 of 6 QW-R502-362.a 13N50 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 13 A Pulsed Drain Current (Note 2) IDM 52 A Avalanche Current (Note 2) IAR 13 A Single Pulsed Avalanche Energy (Note 3) EAS 860 mJ Repetitive Avalanche Energy (Note 2) EAR 19.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 195 W Power Dissipation (TC=25°C) PD TO-220F 48 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 6.0, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C 4. ISD≤13.A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-220F TO-220 TO-220F θJA θJC RATINGS 62.5 62.5 0.64 2.58 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SYMBOL BVDSS IDSS IGSS △BVDSS/△TJ VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN VGS = 0V, ID = 250μA VDS = 500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V ID = 250μA Referenced to 25°C 500 VDS = VGS, ID = 250μA VGS = 10V, ID = 6.5A 2.0 VDS=25V, VGS=0V, f=1.0MHz VDD =250V, ID =13A RG =25Ω (Note 1,2) VDS=400V, ID=13A, VGS=10 V (Note 1, 2) TYP MAX UNIT 1 100 -100 0.5 V μA nA nA V/°C 4.0 0.48 V Ω 1580 2055 180 235 20 25 pF pF pF 25 100 130 100 43 7.5 18.5 nS nS nS nS nC nC nC 0.39 60 210 270 210 56 2 of 6 QW-R502-362.a 13N50 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 13 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0V, IS = 13A, dIF / dt = 100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating ambient temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 410 4.5 MAX UNIT 1.4 V 13 A 52 A nS μC 3 of 6 QW-R502-362.a 13N50 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - ISD L Driver RG Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current VDS (D.U.T.) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-362.a 13N50 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig.2B Switching Waveforms VGS Same Type as D.U.T. 50kΩ 12V 0.3µF 0.2µF QG 10V VDS QGS QGD VGS DUT 3mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-362.a 13N50 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-362.a