UTC-IC DTC143TG-AL3-R

UNISONIC TECHNOLOGIES CO., LTD
DTC143T
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
„
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
„
EQUIVALENT CIRCUIT
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
DTC143TL-AE3-R
DTC143TG-AE3-R
DTC143TL-AL3-R
DTC143TG-AL3-R
DTC143TL-AN3-R
DTC143TG-AN3-R
DTC143TL-T9S-K
DTC143TG-T9S-K
Note: Pin Assignment: E: Emitter, B: Base, C: Collector
„
Package
SOT-23
SOT-323
SOT-523
TO-92SP
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
C
B
Packing
Tape Reel
Tape Reel
Tape Reel
Bulk
MARKING (For SOT Package)
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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DTC143T
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
SOT-523
150
Collector Power Dissipation SOT-23/SOT-323
PC
200
mW
TO-92SP
550
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55~+150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
BVCBO
Collector-Emitter Breakdown Voltage
BVCEO
Emitter-Base Breakdown Voltage
BVEBO
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
Collector-Emitter Saturation Voltage
VCE(SAT)
DC Current Gain
hFE
Input Resistance
R1
Transition Frequency
fT
Note: Transition frequency of the device.
TEST CONDITIONS
IC =50μA
IC =1mA
IE =50μA
VCB=50V
VEB =4V
IC =5mA, IB=0.25mA
VCE=5V, IC=1mA
VCE=10V, IE =5mA, f=100MHz (Note)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
50
50
5
TYP
100
3.29
250
4.7
250
MAX UNIT
V
V
V
0.5
μA
0.5
μA
0.3
V
600
6.11 kΩ
MHz
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„
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain vs. Collector Current
1000
V CE =5V
500
Collector-Emitter Saturation Voltage vs.
Collector Current
1
TA=100
25
-40
200m
200
TA=100
100
100m
25
-40
50
50m
20
20m
10
10m
5
5m
2
2m
1
0.1
Ic/IB =20
500m
0.2
0.5
1
2
5
10
20
50
100
Collector Current, IC (mA)
1m
0.1
0.2
0.5
1
2
5
10
20
50
100
Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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