UNISONIC TECHNOLOGIES CO., LTD. DTA143T PNP SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) 3 1 FEATURES 3 * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. 1 B SOT-323 2 EQUIVALENT CIRCUIT R1 SOT-23 2 3 C 2 E 1 SOT-523 * Pb-free plating product number: DTA143TL ORDERING INFORMATION Order Number Normal Lead Free Plating DTA143T-AE3-R DTA143TL-AE3-R DTA143T-AL3-R DTA143TL-AL3-R DTA143T-AN3-R DTA143TL-AN3-R Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel DTA143TL-AE3-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523 (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn MARKING AE3T A5T For SOT -23/SOT -323 Package For SOT -523 Package www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1of 3 QW-R206-058,D DTA143T PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC RATINGS UNIT -50 V -50 V -5 V -100 mA SOT-523 150 mW Collector Power Dissipation PC SOT-23/SOT-323 200 mW ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55~+150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS Collector-base breakdown voltage BVCBO IC=-50μA Collector-emitter breakdown voltage BVCEO IC=-1mA Emitter-base breakdown voltage BVEBO IE=-50μA Collector cutoff current ICBO VCB=-50V Emitter cutoff current IEBO VEB=-4V Collector-emitter saturation voltage VCE(SAT) IC=-5mA, IB= -0.25mA DC Current Gain hFE VCE=-5V, IC= -1mA Input resistance R1 Transition frequency fT VCE=-10V, IE=5mA, f=100MHz * * Transition frequency of the device UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -50 -50 -5 TYP 100 3.29 250 4.7 250 MAX UNIT V V V -0.5 μA -0.5 μA -0.3 V 600 6.11 kΩ MHz 2 of 3 QW-R206-058,D DTA143T PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector-Emitter Saturation Voltage vs. Collector Current DC Current Gain vs. Collector Current Collector Saturation Voltage, V CE(SAT)(mV) 1000 VCE=-5V DC Current Gain, hFE 500 200 Ta=100℃ 25℃ -40℃ 100 50 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 Collector Current, Ic (mA) -1000 Ic/IB=20 -500 Ta=100℃ 25℃ -40℃ -200 -100 -50 -20 -10 -5 -2 -1 -0.1 -0. 2 -0.5 -1 -2 -5 -10 -20 -50 -100 Collector Current, Ic (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-058,D