DTD123Y Bias Resistor Transistor NPN Silicon COLLECTOR 3 P b Lead(Pb)-Free R1 1 BASE 3 1 R2 2 EMITTER 2 SOT-23 Absolute maximum ratings (TA = 25ºC) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol Vcc VIN IC Pd Tj Tstg Electrical characteristics (TA = 25ºC) Parameter Symbol Min VI(off) Input voltage VI(on) 2 Output voltage Vo(on) Input current II Output current Io(off) DC current gain h FE 56 Input resistance R1 1.54 Resistance ratio R2/R1 3.6 Transition frequency fT * Transition frequency of the device Limits 50 -5~+12 500 200 150 -55~+150 Typ 0.1 2.2 4.5 200 Max 0.3 0.3 3.6 0.5 2.86 5.5 - Unit V V mA mW Unit Conditions Vcc = 5V,Io = 100µA V Vo = 0.3V,Io = 20 mA V Io/II = 50 mA/2.5 mA mA VI = 5V µA Vcc = 50V,V I= 0V Vo = 5V,Io=50 mA kΩ MHZ VCE = 10V,I E = -500m A,f = 100MHZ * DEVICE MARKING : F62 WEITRON http://www.weitron.com.tw 1/3 25-Apr-08 DTD123Y WEITRON http://www.weitron.com.tw 2/3 25-Apr-08 DTD123Y SOT-23 Outline Dimensions Unit:mm A B TOP VIEW E G C D H K J WEITRON http://www.weitron.com.tw L M 3/3 Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 25-Apr-08