WEITRON FMMT593

FMMT593
COLLECTOR
3
General Purpose Transistor PNP Silicon
P b Lead(Pb)-Free
3
1
BASE
1
2
SOT-23
2
EMITTER
Maximum Ratings
Symbol
Value
Unit
Collector-Base Breakdown Voltage
V(BR)CEO
-120
V
Collector-Emitter Breakdown Voltage
V(BR)CBO
-100
V
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
V
Collector Current
IC
-1.0
A
Power Dissipation
TA=25°C
PD
250
mW
Junction Temperature Range
TJ
+150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Rating
Device Marking
FMMT593=593
Electrical Characteristics (TA=25ºC Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Collent-Emitter Breakdown Voltage1
IC = -10mA, IB = 0
V(BR)CEO
-100
-
-
Collent-Base Breakdown Voltage
IC = -100µA, IE = 0
V(BR)CBO
-120
-
-
V
V(BR)EBO
-5.0
-
-
V
ICBO
-
-
-0.1
µA
IEBO
-
-
-0.1
µA
Unit
Off Characteristics
IC = 0, IE = -100µA
VCB = -100V, IE = 0
VEB = -4V, IC = 0
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FMMT593
Electrical Characteristics (TA=25ºC Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
hFE1
hFE2
hFE3
hFE4
100
100
100
50
-
300
-
-
Collector-Emitter Saturation Voltage
IC = -250mA, IB = -25mA
IC = -0.5A, IB = -50mA
VCE(sat)
-
-
-0.2
-0.3
V
Base-Emitter Saturation Voltage
IC = -0.5A, IB = -50mA
VBE(sat)
-
-
-1.1
V
Base-Emitter Voltage
VCE = -5.0V, I C = -1mA
VBE(on)
-
-
-1.0
V
fT
150
-
-
MHz
Cob
-
-
5
pF
On Characteristics (1)
DC Current Gain
VCE= -5.0V, IC= -1.0mA
VCE= -5.0V, IC= -250mA
VCE= -5.0V, IC= -0.5A
VCE= -5.0V, IC= -1.0A
Small-signal Characteristics
Transition Frequency
VCE = -10V, IC = -50mA, f = 100MHz
Output Capacitance
VCB = -10V, f = 1.0MHz
1. Measured under pulsed conditions, Pulse width = 300µs, Duty cycle ≤ 2%.
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FMMT593
TYPICAL TRANSIENT CHARACTERISTICS
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FMMT593
SOT-23 Package Outline Dimensions
Unit:mm
A
B
TOP VIEW
E
G
Dim Min Max
A
0.35 0.51
B
1.19 1.40
C
2.10 3.00
D
0.85 1.05
E
0.46 1.00
G
1.70 2.10
H
2.70 3.10
J
0.01 0.13
K
0.89 1.10
L
0.30 0.61
M 0.076 0.25
C
D
H
K
J
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