WEITRON WAN222

WEITRON
WAN222
Surface Mount Switching Diode
SWITCHING DIODE
100m AMPERRES
80 VOLTS
Features:
*Extremely High Switching Speedff
*Low Reverse Leakage Current
*Small Outline Surface Mount SC-89 Package
*High Reliability
SC-89
(SOT-523F)
Applications:
Ultra High Speed Switching
SC-89 Outline Demensions
Unit:mm
A
Dim
A
B
C
D
G
J
K
M
N
S
3
T OP V IE W
2
1
K
B
S
G
D
N
M
C
WEITRON
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J
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SC-89
Min
1.50
0.75
0.60
0.23
0.10
0.30
----1.50
Nom
1.60
0.85
0.70
0.28
0.50BSC
0.15
0.40
----1.60
Max
1.70
0.95
0.80
0.33
0.20
0.50
10
10
1.70
10-Jul-09
WAN222
Maximum Ratings
(EACH DIODE)
Symbol
Characteristic
Value
Unit
Non-Repetitive Reverse Voltage
VRM
80
Volts
DC Reverse Voltage
80
Volts
Forward Current
VR
IF
100
mAdc
Peak Forward Surge Current
IFM
300
mAdc
Non-Repetitive Peak Forward
Surge Current
@t=1us
IFSM
4
Adc
Thermal Characteristics
Max
Unit
mW
mW/ C
R JA
150
1.2
833
TJ, Tstg
-55 to + 150
Symbol
Characteristic
Total Device Dissipation FR-5
Board *1, TA=25 C
Derate Above 25 C
PD
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
C/W
C
*1 ER-5=1.0x0.75x0.062 in
Electrical Characteristics
(TA=25 C Unless Otherwise Note) (Each Diode)
Characteristic
Symbol
Min
Max
Unit
VBR
80
-
Vdc
IR
-
0.1
uAdc
CD
-
3.5
PF
VF
-
1.2
Vdc
trr
-
4.0
nS
Reverse Breakdown Voltage
(IR=100 uAdc)
Reverse Voltage Leakage Current
(VR=70V)
Diode Capacition
(VR=6Vdc, f=1.0MHz)
Forward Voltage
(IF=100 mAdc)
Reverse Recovery Time (Figure 1.)
(IR=5.0 mAdc, VR=6.0 Vdc)
Device Marking
Item
WAN222
WEITRON
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Eqivalent Circuit diagram
Marking
3
N9
2/3
1
2
10-Jul-09
WAN222
tr
tp
trr
t
IF
t
10%
RL
A
Irr = 0.1 IR
90%
VR
I F = 5.0 mA
VR = 6 V
R L = 100 W
tp = 2 ms
tr = 0.35 ns
INPUT PULSE
RECOVERY TIME EQUIV
ALENT TEST CIRCUIT
OUTPUT PULSE
FIG.1 Reverse Recovery Time Test Circuit for the DAN222
10
100
IR , REVERSE CURRENT (mA)
IF, FORWARD CURRENT (mA)
TA = 150 C
TA = 85 C
10
TA = - 40 C
1.0
0.1
0.2
TA = 25 C
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
TA = 125 C
1.0
TA = 85 C
0.1
TA = 55 C
0.01
TA = 25 C
0.001
0
1.2
10
FIG.2 Forward Voltage
20
30
40
VR , REVERSE VOLTAGE (VOLTS)
50
FIG.3 Reverse Current
C D , DIODE CAPACITANCE (pF)
1.0
0.9
0.8
0.7
0.6
0
2
4
6
8
VR , REVERSE VOL TAGE (VOLTS)
FIG.4 Diode Capacitance
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10-Jul-09