BAV74 - Weitron

BAV74
Surface Mount Switching Diode
SWITCHING DIODE
P b Lead(Pb)-Free
200m AMPERES
50 VOLTS
Features:
*Low Current Leakage
*Low Forward Voltage
*Reverse Recover Time Trr ≤ 4ns
*Small Outline Surface Mount SOT-23 Package
3
1
2
SOT-23
SOT-23 Outline Dimensions
Uint:mm
A
B
TOP VIEW
E
G
C
D
H
K
J
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L
M
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Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
15-Jul-05
BAV74
Maximum Ratings
Symbol
Value
Unit
Reverse Voltage
VR
50
V
Forward Current
IF
200
mA
IFM
500
mA
Symbol
Max
Unit
PD
225
1.8
556
mW
mW/˚C
RθJA
300
2.4
417
mW
mW/˚C
˚C/W
TJ, Tstg
-55 to + 150
˚C
Characteristic
Peak Forward Surge Current
Thermal Characteristics
Characteristic
1
Total Device Dissipation FR-5 Board
TA=25˚C
Derate Above 25˚C
RθJA
Thermal Resistance Junction to Ambient
˚C/W
2
Total Device Dissipation Alumina Substrate
TA=25˚C
Derate Above 25˚C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
PD
1. FR-5=1.0x0.75x0.062 in.
2. Alumina=0.4x0.3x0.024 in 99.5% Alumina.
Electrical Characteristics
Characteristic
(TA=25˚C Unless Otherwise Note) (Each Diode)
Symbol
Min
Max
Unit
Off Characteristics
Reverse Breakdown Voltage
IBR = 5.0 μAdc
VBR
50
-
V
Reverse Voltage Leakage Current
VR=50V, TJ=125˚C
VR=50V
IR
-
100
0.1
μA
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
-
2.0
PF
Forward Voltage
IF = 100 mAdc
VF
-
1.0
V
Reverse Recovery Time
IF=IR=10 mAdc,IR(REC)=1.0 mAdc
measured at IR=1.0mA RL=100Ω
t rr
-
4.0
ns
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15-Jul-05
BAV74
Device Marking
Item
Marking
BAV74
JA
Eqivalent Circuit diagram
1
2
3
Characteristics Curve
100
IA. REVERSE CURRENT (µA)
IF, FORWARD CURRENT (mA)
10
TA=85˚C
TA=- 40˚C
10
TA=25°C
1.0
0.1
TA=150°C
0.4
0.6
0.8
1.0
1.2
TA=85°C
0.1
TA=55°C
0.01
0.001
0.2
TA=125°C
1.0
TA=25°C
0
10
20
30
40
50
VR. REVERSE VOLTAGE (VOLTS)
VF, FORWARD VOLTAGE (VOLTS)
FIG.2 LEAKAGE CURRENT
FIG.1 FORWARD VOLTAGE
CD. DIODE CAPACITANCE (PF)
1.0
0.9
0.8
0.7
0.6
0
2
4
6
8
VR. REVERSW VOLTAGE (VOLTS)
FIG.3 CAPACITANCE
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15-Jul-05