RoHS MMBD6050LT1 MONOLITHIC DUAL SWITCHING DIODE D T ,. L Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 Vdc IFM(surge) 500 mAdc PD 225 mW Peak Forward surge Current Total Device Dissipation FR-5 Board(Note) 1.8 Derate above 25 Junction Temperature Tj 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Reverse Breakdown Voltage(IR=100uAdc) V(BR) R T Reverse Voltage Leakage Current (VR=50Vdc) IR Diode Capacitance(VR=0 f=1.0MHz) C E L Forward Voltage (IF=1.0mAdc) (IF=100mAdc) O Symbol CT mW/ N IC Min Max 75 Unit Vdc 0.1 uAdc PF Vdc VF Reverse Recovery Time(IF=IR=10mAdc) C O 0.55 0.7 0.85 1.1 Trr 2.5 ns E Note:FR-5=1.0 0.75 0.062in DVICE MARKING: J E MMBD6050LT1=5A W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]