WIMN10 Surface Mount Switching Multi-Chip Diode Array MULTI-CHIP DIODES 100m AMPERES P b Lead(Pb)-Free 80 VOLTS Features: * Ultra High Speed Switching * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation 6 1 TSOP-6 Mechanical Data: * Case : TSOP-6 * Case Material : Molded Plastic. UL Flammability Classification Ration 94V-0 * Moisture Sensitivity : Level 1 per J-STD-020C * Terminals : Solderable per MIL-STD-202, Method 208 * Polarity : See Diagram TSOP-6 Outline Dimensions Unit:mm A TSOP-6 6 5 4 B C 1 2 3 D H K J WEITRON http://www.weitron.com.tw Ө L M 1/3 Dim A B C D Ө H J K L M Min 0.25 1.30 2.50 0.85 0° 2.90 0.01 0.90 0.20 0.10 Max 0.50 1.70 3.00 1.05 10° 3.10 0.10 1.10 0.60 0.26 04-Mar-09 WIMN10 Maximum Ratings @ TA= 25°C unless otherwise specified Characteristic Symbol Value Unit VRM 80 V DC Reverse Voltage VR 80 V Peak Forward Current IFM 300 mA Average Rectified Output Current IO 100 mA IFSM 4.0 A Power Dissipation (Note 1) PD 300 mW Operating Temperature Range Tj +150 °C TSTG -55 to +150 °C Peak Reverse Voltage Non-Repetitive Peak Forward Surge Current @ t = 1.0s Storage Temperature Range Note 1 : Not to exceed 200mW per element. Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Forward Voltage IF = 100mA VF - 1.2 V Reverse Current VR = 70V IR - 0.1 Capacitance between terminals VR = 6V, f = 1.0MHz CT - 3.5 pF Reverse Recovery Time VR = 6V, IF =5mA Trr - 4.0 ns µA Device Marking Item WIMN10 WEITRON http://www.weitron.com.tw Marking Eqivalent Circuit diagram 1 2 3 N10 2/3 6 5 4 04-Mar-09 WIMN10 Typical Characteristics +10 V 2.0 k 820 Ω 100 µH IF 0.1 µF t tr 0.1µF IF t p t rr 10% t 90% D.U.T. 50 Ω INPUT SAMPLING OSCILLOSCOPE 50 Ω OUTPUT PULSE GENERATOR i IR INPUT SIGNAL VR R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH DIODE 10 I R , REVERSE CURRENT (µA) I F , FORWARD CURRENT (mA) 100 T A = 85°C 10 T A = – 40°C 1.0 T A = 25°C 0.1 T A = 150°C T A = 125°C 1.0 T A = 85°C 0.1 T A = 55°C 0.01 T A = 25°C 0.001 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 50 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 3. Leakage Current Figure 2. Forward Voltage C D ,TOTAL CAPACITANCE (pF) 0.68 0.64 0.60 0.56 0.52 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance WEITRON http://www.weitron.com.tw 3/3 04-Mar-09