BAS516 High Speed Switching Diodes SWITCHING DIODE 250 mAMPERES 75 VOLTS P b Lead(Pb)-Free Features: * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak forward current: max. 500 mA 1 2 Applications: * High-speed switching in e.g. surface mounted circuits. SOD-523 Description: * The BAS516 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD-523 (SC79) SMD plastic package. SOD-523 Outline Dimensions Unit:mm SOD-523 Dim A B C D E J K WEITRON http://www.weitron.com.tw 1/4 Min Max 1.10 1.30 0.70 0.90 0.50 0.70 0.25 0.35 0.15 0.25 0.07 0.20 1.50 1.70 PIN 1. CATHODE 2. ANODE 06-Jan-06 BAS516 Maximum Ratings (TA=25˚C Unless otherwise noted) Characteristic Symbol Value Unit DCReverseVoltage VR 75 V Mean Rectifying Current IO 250 mA IFSM 500 mA TJ +150 ˚C Tstg -65 to +150 ˚C Peak Forward Surge Current @t=1s Operating Junction Temperature Range Storage Temperature Range Electrical Characteristics (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Forward Voltage IF=1mA IF=10mA IF=50mA IF=150mA VF1 VF2 VF3 VF4 - - 0.715 0.855 1.0 1.25 Reverse Current VR=25V VR=75V IR1 IR2 - - 0.03 1.0 µA Capacitance Between Terminals VR=0,f=1MHz CT - - 1.0 pF Reverse Recovery Time IF = 10 mA , IR = 10 mA, RL = 100Ω Measured at IR = 1mA; see Fig.6 Trr - - 4.0 ns Unit V Device Marking Item Marking BAS516 6 , 61 WEITRON http://www.weitron.com.tw Eqivalent Circuitdiagram 1 2/4 2 06-Jan-06 BAS516 Typical Characteristics 300 IF, FORWARD CURRENT (mA) IF, FORWARD CURRENT (mA) 500 400 300 200 100 0 0 50 100 150 o Tj= 150°C typical values 200 Tj= 25°C typical values 100 Tj= 25°C maximum values 0 200 0 1 Ts ( C) 2 VF, FORWARD VOLTAGE (V) Fig.1 Maximum permissible continuous forward current as a function of soldering point temperature. Fig.2 Forward current as Forward voltage IFSM, Peak forward surge current (A) 100 10 1 0.1 1 100 10 1000 10000 tp (µs) Based on square wave currents; Tj = 25 °C prior to surge. CAPACITANCE BETWEEN TERMINALS : CT (pF) Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. IR,REVERSE CURRENT (nA) 105 10 V R = 75 V 4 max 103 10 75 V 25 V 2 typ 10 typ 100 0 200 0.4 Tj= 25°C 0.2 0 0 4 8 12 16 Fig. 5 Capacitance between terminals characteristics Fig.4 Reverse current as Junction temperature WEITRON f = 1 MHz VR,Reverse voltage (V) TJ,Junction temperature (°C) http://www.weitron.com.tw 0.6 3/4 06-Jan-06 BAS516 Typical Characteristics tr D.U.T. IF R = 50 Ω S tp t 10% IF SAMPLING OSCILLOSCOPE t rr R i = 50 Ω V = VR I F x R S (1) 90% VR input signal t output signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time tr = 0.35 ns. Fig. 6 Reverse recovery voltage test circuit and waveforms WEITRON http://www.weitron.com.tw 4/4 06-Jan-06