WEITRON BAS516

BAS516
High Speed Switching Diodes
SWITCHING DIODE
250 mAMPERES
75 VOLTS
P b Lead(Pb)-Free
Features:
* High switching speed: max. 4 ns
* Continuous reverse voltage: max. 75 V
* Repetitive peak forward current: max. 500 mA
1
2
Applications:
* High-speed switching in e.g. surface mounted circuits.
SOD-523
Description:
* The BAS516 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD-523
(SC79) SMD plastic package.
SOD-523 Outline Dimensions
Unit:mm
SOD-523
Dim
A
B
C
D
E
J
K
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Min
Max
1.10
1.30
0.70
0.90
0.50
0.70
0.25
0.35
0.15
0.25
0.07
0.20
1.50
1.70
PIN 1. CATHODE
2. ANODE
06-Jan-06
BAS516
Maximum Ratings
(TA=25˚C Unless otherwise noted)
Characteristic
Symbol
Value
Unit
DCReverseVoltage
VR
75
V
Mean Rectifying Current
IO
250
mA
IFSM
500
mA
TJ
+150
˚C
Tstg
-65 to +150
˚C
Peak Forward Surge Current @t=1s
Operating Junction Temperature Range
Storage Temperature Range
Electrical Characteristics
(TA=25˚C Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Forward Voltage
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VF1
VF2
VF3
VF4
-
-
0.715
0.855
1.0
1.25
Reverse Current
VR=25V
VR=75V
IR1
IR2
-
-
0.03
1.0
µA
Capacitance Between Terminals
VR=0,f=1MHz
CT
-
-
1.0
pF
Reverse Recovery Time
IF = 10 mA , IR = 10 mA, RL = 100Ω
Measured at IR = 1mA; see Fig.6
Trr
-
-
4.0
ns
Unit
V
Device Marking
Item
Marking
BAS516
6 , 61
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Eqivalent Circuitdiagram
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BAS516
Typical Characteristics
300
IF, FORWARD CURRENT (mA)
IF, FORWARD CURRENT (mA)
500
400
300
200
100
0
0
50
100
150
o
Tj= 150°C
typical values
200
Tj= 25°C
typical values
100
Tj= 25°C
maximum values
0
200
0
1
Ts ( C)
2
VF, FORWARD VOLTAGE (V)
Fig.1 Maximum permissible continuous
forward current as a function of
soldering point temperature.
Fig.2 Forward current as Forward voltage
IFSM, Peak forward surge current (A)
100
10
1
0.1
1
100
10
1000
10000
tp (µs)
Based on square wave currents; Tj = 25 °C prior to surge.
CAPACITANCE BETWEEN TERMINALS : CT (pF)
Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
IR,REVERSE CURRENT (nA)
105
10
V R = 75 V
4
max
103
10
75 V
25 V
2
typ
10
typ
100
0
200
0.4
Tj= 25°C
0.2
0
0
4
8
12
16
Fig. 5 Capacitance between terminals characteristics
Fig.4 Reverse current as Junction temperature
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f = 1 MHz
VR,Reverse voltage (V)
TJ,Junction temperature (°C)
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06-Jan-06
BAS516
Typical Characteristics
tr
D.U.T.
IF
R = 50 Ω
S
tp
t
10%
IF
SAMPLING
OSCILLOSCOPE
t rr
R i = 50 Ω
V = VR I F x R S
(1)
90%
VR
input signal
t
output signal
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time tr = 0.35 ns.
Fig. 6 Reverse recovery voltage test circuit and waveforms
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06-Jan-06