SBN13003A1 High Voltage Fast-Switching NPN Power Transistor Features � Very High Switching Speed � High Voltage Capability � Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed switching Characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCES Collector-Emitter Voltage VBE=0 700 V VCEO Collector-Emitter voltage IB=0 400 V VEBO Emitter -Base voltage IC=0 9.0 V IC Collector Current 1.5 A ICP Collector pulse Current 3.0 A IB Base Current 0.75 A IBM Base Peak Current 1.5 A tP=5ms Total Dissipation at Tc*=25℃ 18 Total Dissipation at Ta*=25℃ 1.14 PC W TJ Operation Junction Temperature -40~150 ℃ TSTG Storage Temperature -40~150 ℃ Value Units 13.6 ℃/W Tc :Case temperature(good cooling) Ta :Ambient temperature(without heat sink) Thermal Characteristics Symbol RQJA Parameter Thermal Resistance Junction to Ambient Rev.A Aug.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. SBN13003A1 Electrical Characteristics(Tc=25℃ Symbol VCEO(sus) unless otherwise noted) Parameter Collector-Emitter Breakdown Voltage Test Conditions Ic=10mA,Ib=0 Value Min Typ Max 400 - - Ic=0.5A,Ib=0.1A VCE(sat) Collector-Emitter Saturation Voltage Ic=1.0A,Ib=0.25A ICBO hFE Base -Emitter Saturation Voltage Ic=0.5A,Ib=0.1A - - 1.0 - - Vce=2V,Ic=1A 8 - Vce=2V,Ic=1.0A 3 - VCC=125V,Ic=1A IB1=0.2A,IB2=-0.5A Tp=25µs - 0.25 1.0 1.32 3.0 0.23 0.4 - 1.2 4.0 - 0.12 0.3 - 1.8 5.0 - 0.16 0.4 Vcb=700V (Vbe=-1.5V) Vcb=700V,Tc=100℃ V 3.0 - Collector-Base Cutoff Current DC Current Gain 1.0 - Ic=1.0A,Ib=0.25A V 0.5 Ic=1.5A,Ib=0.5A VBE(sat) Units 1.2 1.0 5.0 V mA 20 Resistive Load ton Turn-on Time ts Storage Time tf Fall Time ts tf Inductive Load VCC=15V,Ic=1A IB1=0.2A,IB2=-0.5A L=0.35mH,Vclamp= 300V Storage Time Fall Time VCC=15V,Ic=1A IB1=0.2A,IB2=-0.5A L=0.35mH,Vclamp= 300V Inductive Load ts Storage Time tf Fall Time µs µs µs Tc=100℃ Note: Pulse Test : Pulse width 300,Duty cycle 2% 2/5 Steady, keep you advance SBN13003A1 Fig.1 DC Current Gain Fig.3 Collector -Emitter saturation Voltage Fig.2 Base -Emitter Saturation Voltage Fig.4 Safe Operation Area Fig.5 Static Characteristics Fig.6 Power Derating 3/5 Steady, keep you advance SBN13003A1 Resistive Load Switching Test Circuit Inductive Load Switching& RBSOA Test Circuit 4/5 Steady, keep you advance SBN13003A1 To-92 Package Dimension Unit :mm 5/5 Steady, keep you advance