0
SFF74
740
annel MOS
FET
Silicon N-Ch
Cha
OSF
Features
■ 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 60nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology. This latest technology has beenespecially
designed to minimize on -state resistance,have a highrugged
avalanche characteristics. This devices is specially wellsuited for high
efficiency switch model power supplies, power factor correction and
half bridge and full bridge resonant topology line a electronic lamp
ballast.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
400
V
Continuous Drain Current(@Tc=25℃)
10*
A
Continuous Drain Current(@Tc=100℃)
6.3*
A
40*
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
450
mJ
EAR
Repetitive Avalanche Energy
(Note1)
13
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4
V/ ns
44
W
0.35
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
2.86
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
0
SFF74
740
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
IDSS
VDS=400V,VGS=0V
-
-
25
µA
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
400
-
-
V
Break voltage Temperature
△BVDSS/
ID=250µA, Referenced
-
0.4
-
V/℃
Gate-source breakdown voltage
Drain cut -off current
△TJ
Coefficient
to 25℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=5A
-
0.48
0.55
Ω
Forward Transconductance
gfs
VDS=40V,ID=5A
-
9.6
-
S
Input capacitance
Ciss
VDS=25V,
-
1400
1800
Reverse transfer capacitance
Crss
VGS=0V,
-
36
46
Output capacitance
Coss
f=1MHz
-
150
195
VDD=200V,
-
20
50
ID=10A，
-
80
170
-
125
260
-
85
180
-
60
71
-
7
-
-
27
-
Rise time
tr
Turn-on time
ton
Switching time
Fall time
tf
Turn-off time
ns
RG=25Ω，
(Note4,5)
toff
Total gate charge(gate-source
pF
VDD=320V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=10A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
10
A
Pulse drain reverse current
IDRP
-
-
-
40
A
Forward voltage(diode)
VDSF
IDR=10A,VGS=0V
-
1.4
1.5
V
Reverse recovery time
trr
IDR=10A,VGS=0V,
-
330
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
3.57
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=7.9mH IAS=10A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤10A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
0
SFF74
740
Fig.1 On-State Characteristics
Fig.2 Transfer characteristics
Fig.3 Capacitance Variation vs
Fig.4 Breakdown voltage Variation
Drain Voltage
vs Temperature
Fig.5 On-Resistance Variation vs
Fig.6 Gate Charge Characteristics
Junction Temperature
3/7
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0
SFF74
740
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response curve
4/7
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0
SFF74
740
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
5/7
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0
SFF74
740
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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0
SFF74
740
20F Pa
cka
ge Dim
ension
TO-2
-22
Pac
kage
Dime
Unit:mm
7/7
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