WFF9N50
Silicon N-Channel MOSFET
Features
�
9A,500V, RDS(on)(Max0.75Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 30nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for high efficiency switch model power
supplies, power
factor correction and half bridge and full bridge resonant topology
line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
500
V
Continuous Drain Current(@Tc=25℃)
9
A
Continuous Drain Current(@Tc=100℃)
5.1
A
32
A
±30
V
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
510
mJ
EAR
Repetitive Avalanche Energy
(Note1)
13
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
3.5
V/ ns
44
W
0.35
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
2.86
℃/W
RQCS
Thermal Resistance , Case-to-Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WFF9N50
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=500V,VGS=0V
-
-
1
µA
10
µA
-
V
Drain cut -off current
IDSS
VDS=400V,TC=125℃
Drain -source breakdown voltage
V(BR)DSS
Breakdown voltage Temperature
△BVDSS/
ID=250 µA,VGS=0V
500
-
ID=250µA,Referenced
0.57
V/℃
Coefficient
△TJ
to 25℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
3
-
5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=4.8A
-
-
0.75
Ω
Forward Transconductance
gfs
VDS=50V,ID=4.8A
3.7
Input capacitance
Ciss
VDS=25V,
-
1018
-
Reverse transfer capacitance
Crss
VGS=0V,
-
8
-
Output capacitance
Coss
f=1MHz
-
155
-
VDD=250V,
-
11
-
ID=9A
-
23
-
tf
RG=9.1Ω
-
26
-
toff
RD=31Ω
-
19
-
-
30
38
-
7
9
-
15
18
Min
Type
Max
Unit
Rise time
tr
Turn-on time
ton
S
Switching time
pF
ns
Fall time
Turn-off time
Total gate charge(gate-source
(Note4,5)
VDD=400V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=9A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
9
A
Pulse drain reverse current
IDRP
-
-
-
32
A
Forward voltage(diode)
VDSF
IDR=9A,VGS=0V
-
1.4
2.0
V
Reverse recovery time
trr
IDR=9A,VGS=0V,
-
442
633
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
2.16
3.24
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=9A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WFF9N50
Fig.1 On State Characteristics
Fig.2 Transfer Characteristics
Fig.3 Capacitance Variation vs
Fig.4 Maximum Avalanche Energy
vs On-State Current
Drain Voltage
Fig.5 On-Resistance Variation vs
Fig.6 Gate Charge Characteristics
Junction temperature
3/7
Steady, keep you advance
WFF9N50
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current
vs Case temperature
Fig.9 Transient thermal Response Curve
4/7
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WFF9N50
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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WFF9N50
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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WFF9N50
F Package Dimension
TO-220
TO-220F
Unit:mm
7/7
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