SFP12N65 nnel MOSFET Silicon N-Cha N-Chan Features ■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 30nC) ■ Fast Switching Capability ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for AC-DC switching power supplies, DC-DC power converters, high voltage H-bridge motor drive PMW Absolute Maximum Ratings Symbol VDSS Value Units Drain Source Voltage Parameter 650 V Continuous Drain Current(@Tc=25℃) 12 A ID Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 990 mJ EAR Repetitive Avalanche Energy (Note 1) 22 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD TJ, Tstg TL A (Note1) A 4.5 V/ns Total Power Dissipation(@Tc=25℃) 178 W Derating Factor above 25℃ 1.43 W/℃ -55~150 ℃ 300 ℃ Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Parameter Min Value Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 0.70 ℃ RQCS Thermal Resistance, Case-to-Sink - - - / ℃ RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 W / ℃ W / W Rev, A Nov.2008 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. SFP12N65 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Symbol Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V VDS = 650 V, VGS = 0 V - - 10 μA VDS = 480 V, Tc = 125°°C - - 100 μA IDSS Drain cut−off current Test Condition V(BR)DSS ID = 250 μA, VGS = 0 V 650 - - V Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 3 - 4.5 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 6A - 0.64 Forward Transconductance gfs VDS = 50 V, ID =6A - 6.4 - Input capacitance Ciss VDS = 25 V, - 1830 - Reverse transfer capacitance Crss VGS = 0 V, - 155 - Output capacitance Coss f = 1 MHz - 2.0 - VDD =325V, - 50 - ID = 12A - 49 - - 310 - - 54 - - 51.7 - - 9.6 - - 18.6 - Drain−source breakdown voltage Rise time Turn−on time tr ton Switching time Fall time Turn−off time tf 0.78 Ω S pF ns RG=25Ω (Note4,5) toff Total gate charge (gate−source plus gate−drain) Qg Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd VDD =520 V, VGS = 10 V, ID = 12A (Note4,5) nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type IDR - - - 12 A Pulse drain reverse current IDRP - - - 48 A Forward voltage (diode) VDSF IDR = 10A, VGS = 0 V - - 1.4 V Continuous drain reverse current Max Unit Reverse recovery time trr IDR = 10 A, VGS = 0 V, - 450 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 5.0 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=14mH,IAS=12A,VDD=95V,RG=25Ω,Starting TJ=25℃ 3.ISD≤10A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance SFP12N65 Fig. 1 On-State Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.5 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Current Characteristics ward Voltage Fig.4 Body Diode For Forw Variation with Source Current And Temperature Fig.6 Gate Charge Characteristics 3 /7 Steady, keep you advance SFP12N65 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Cu Currrent vs re Case Temperatu mperature nt Thermal Response Curve Fig.9 Transie nsient 4 /7 Steady, keep you advance SFP12N65 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5 /7 Steady, keep you advance SFP12N65 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6 /7 Steady, keep you advance SFP12N65 TO-220 Package Dimension Unit:mm 7 /7 Steady, keep you advance