B
WFU5N60
5N60B
Silicon N-Channel MOSFET
Features
�
4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 15nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche
characteristics .This devices is specially well
suited for half bridge and
full bridge resonant
topology line a
electronic lamp ballast, high efficiency switched
mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
4.5
A
Continuous Drain Current(@Tc=100℃)
3.1
A
16
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
240
mJ
EAR
Repetitive Avalanche Energy
(Note1)
10
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ns
50
W
Derating Factor above 25℃
0.23
W/℃
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
TL
Channel Temperature
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
2.5
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Nov.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
B
WFU5N60
5N60B
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Type
Max
Unit
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
VDS=480V,Tc=125℃
-
-
100
µA
-
0.6
-
V/℃
IDSS
△BVDSS/
△TJ
coefficient
Drain -source breakdown voltage
Min
IGSS
Drain Cut -off current
Breakdown voltage Temperature
Test Condition
ID=250 µA,Referenced
to 25℃
V(BR)DSS
ID=250 µA,VGS=0V
600
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=2.2A
-
2.0
2.4
Ω
Forward Transconductance
gfs
VDS=50V,ID=2.2A
-
4.0
-
S
Input capacitance
Ciss
VDS=25V,
-
520
670
Reverse transfer capacitance
Crss
VGS=0V,
-
8
11
Output capacitance
Coss
f=1MHz
-
70
90
VDD=300V,
-
49
111
pF
Turn-on Rise time
tr
Turn-on delay time
Td(on)
ID=4.5A
-
16
42
tf
RG=25Ω
-
37
84
-
46
102
-
15
20
-
3.4
-
-
7.1
-
Min
Type
Max
Unit
Switching time
ns
Turn-off Fall time
Turn-off delay time
(Note4,5)
Td(off)
Total gate charge(gate-source
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=4.4A
(Note,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
4.5
A
Pulse drain reverse current
IDRP
-
-
-
17.6
A
Forward voltage(diode)
VDSF
IDR=4.4A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=4.4A,VGS=0V,
250
-
-
ns
Reverse recovery charge
Qrr
dIDR /dt =100 A /µs
1.5
-
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=25mH IAS=4.4A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤4.5A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
B
WFU5N60
5N60B
Fig.1 On-State characteristics
Fig.2 Transfer Current characteristics
Fig.3 On-Resistance Variation vs
Fig.4 Body Diode Forward Voltage
Drain Current
Variation with Source Current
and Temperature
Fig.5 On-Resistance Variation vs
Fig.6 Gate Charge Characteristics
Junction Temperature
3/7
Steady, keep you advance
B
WFU5N60
5N60B
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response Curve
4/7
Steady, keep you advance
B
WFU5N60
5N60B
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
Steady, keep you advance
B
WFU5N60
5N60B
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
Steady, keep you advance
B
WFU5N60
5N60B
IPAK Package Dimension
Unit:mm
7/7
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