0 WFF63 630 on N-Chann el MOSFE T Silic ilico nne FET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) ri pt ion General Desc scri ript ption This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. Absolute Max axiimum Ratings Symbol VDSS ID Parameter Value Drain Source Voltage Units 200 V Continuous Drain Current(@Tc=25℃) 9 A Continuous Drain Current(@Tc=100℃) 5.7 A 36 A IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns 40 W Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg Junction and Storage Temperature TL Maximum lead Temperature for soldering purposes 0.35 W/℃ -55~150 ℃ 300 ℃ al Charac stics Therm rmal actteri ris Symbol Parameter Min Value Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 3.12 ℃/W RQCS Thermal Resistance, Case to Sink - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev, A Jun.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T01-3 WFF630 Elec ecttrical Charac actteristics (Tc = 25 25°°C) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA Gate−source breakdown voltage V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V Drain cut−off current IDSS VDS = 200 V, VGS = 0 V - - 10 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 200 - - V ID=250μA, Referenced to 25℃ - 0.2 - V/℃ ΔBVDSS/ Break Voltage Temperature Coefficient ΔTJ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 4.5A - - 0.4 Ω Forward Transconductance gfs VDS = 50 V, ID = 4.5A - 7.05 - S Input capacitance Ciss VDS = 25 V, - 500 720 Reverse transfer capacitance Crss VGS = 0 V, - 23 30 Output capacitance Coss f = 1 MHz - 85 110 VDD =100 V, - 11 30 - 70 150 - 60 130 - 65 140 - 22 29 - 3.6 - - 10 - Test Condition Min Type Max Switching time Rise time tr Turn−on time ton Fall time tf Turn−off time toff ID = 9 A RG=12 Ω (Note4,5) Total gate charge (gate−source plus gate−drain) VDD = 160 V, Qg pF ns VGS = 10 V, Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 9 A (Note4,5) nC urce−Drain Ratings and Characteristics (Ta = 25 So Sou 25°°C) Characteristics Symbol Unit Continuous drain reverse current IDR - - - 9 A Pulse drain reverse current IDRP - - - 36 A Forward voltage (diode) VDSF IDR = 9 A, VGS = 0 V - 1.4 1.5 V Reverse recovery time trr IDR = 9A, VGS = 0 V, - 140 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 1.1 2.2 μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,StartingTJ=25℃ 3.ISD≤9A,di/dt≤300A/us,VDD<BV DSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,DutyCycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance 0 WFF63 630 Fig. 1 On-State Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.5 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Characteristics Fig.4 Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, keep you advance WFF630 Fig.8 Capacitance Characteristics Fig.9 Breakdown Voltage Variation vs. Temperature Fig.9 Maximum Safe Operation Area Fig.10 Maximum Drain Current vs Case Temperature Fig.11 Transient Thermal Response Curve 4/7 Steady, keep you advance W FF630 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance WFF630 Fig.13 Peak Diode Renovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance W FF630 TO-2 20F Pack age Dim ension -22 Packa Dime Uni Unitt: m m 7/7 Steady, keep you advance