WFF15N60
Silicon N-Channel MOSFET
Features
�
15A,600V, RDS(on)(Max0.52Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 36nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,DMOS technology.This latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
high efficiency switch model power supplies, power factor correction
and half bridge and full bridge resonant topology line a electronic
lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
15*
A
Continuous Drain Current(@Tc=100℃)
9.5*
A
60*
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
245
mJ
EAR
Repetitive Avalanche Energy
(Note1)
23.9
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
9.8
V/ ns
53
W
0.42
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
2.36
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
N60
WFF15
F15N
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
100
µA
IDSS
VDS=480V,TC=125℃
Drain -source breakdown voltage
V(BR)DSS
Breakdown voltage Temperature
△BVDSS/
ID=250 µA,VGS=0V
600
-
-
V
-
0.79
-
V/℃
ID=250µA,Referenced
Coefficient
△TJ
to 25℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
3
-
5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=7.5A
-
0.45
0.52
Ω
Forward Transconductance
gfs
VDS=40V,ID=7.5A
-
19.8
-
S
Input capacitance
Ciss
VDS=25V,
-
2270
3000
Reverse transfer capacitance
Crss
VGS=0V,
-
23
37
Output capacitance
Coss
f=1MHz
-
300
405
VDD=250V,
-
78
162
Turn-On Rise time
tr
Turn-on delay time
Td(on)
ID=15A
-
50
101
Turn-On Fall time
tf
RG=25Ω
-
66
128
Turn-off delay time
Td(off)
-
120
261
-
36
60
-
9
-
-
16
-
Min
Type
Max
Switching time
pF
ns
Total gate charge(gate-source
(Note4,5)
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=15A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Unit
Continuous drain reverse current
IDR
-
-
-
15
A
Pulse drain reverse current
IDRP
-
-
-
60
A
Forward voltage(diode)
VDSF
IDR=15A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=15A,VGS=0V,
-
600
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
7.2
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=2.0mH IAS=15A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤15A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
N60
WFF15
F15N
Fig.1 On region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance Variation vs Drain
current and gate voltage
Fig.4 Body diode Forward voltage variation
Fig.5 Capacitance characteristics
Fig.6 Gate Charge Characteristics
vs source current and temperature
3/7
Steady, keep you advance
N60
WFF15
F15N
Fig.7 Breakdown voltage variation
Fig.8 On-Resistance variation vs
vs temperature
temperature
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Currentvs
Case temperature
Fig.9 Transient thermal Response Curve
4/7
Steady, keep you advance
N60
WFF15
F15N
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
Steady, keep you advance
N60
WFF15
F15N
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
Steady, keep you advance
N60
WFF15
F15N
TO-220
F Package Dimension
TO-220F
Unit:mm
7/7
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