B
WFU2N60
WFU2N60B
Silicon N-Channel MOSFET
Features
�
2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V
�
Ultra-low Gate Charge(Typical 9nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged avalanche
characteristics. This devices is specially well suited for high efficiency
switch mode power supply .
Absolute Maximum Ratings
Symbol
VDSS
Value
Units
Drain Source Voltage
Parameter
600
V
Continuous Drain Current(@Tc=25℃)
2.0
A
Continuous Drain Current(@Tc=100℃)
1.3
A
8
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
140
mJ
EAR
Repetitive Avalanche Energy
(Note1)
6.4
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
5.5
V/ ns
46
W
0.35
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
Thermal Resistance , Junction -to -Case
RQCS
Thermal Resistance , Case-to-Sink
RQJA
Thermal Resistance , Junction-to -Ambient
Value
Units
Min
Typ
Max
-
-
2.7
℃/W
0.5
-
-
℃/W
-
-
62.5
℃/W
Rev.A Nov.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
B
WFU2N60
WFU2N60B
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Drain -source breakdown voltage
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,V GS=0V
-
-
10
µA
VDS=480V,Tc=125℃
-
100
µA
IDSS
V(BR)DSS
ID=250 µA,VGS=0V
600
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=1A
-
4.5
5.0
Ω
Forward Transconductance
gfs
VDS=50V,ID=1A
-
2.25
-
S
Input capacitance
Ciss
VDS=25V,
-
280
330
Reverse transfer capacitance
Crss
VGS=0V,
-
6
8
Output capacitance
Coss
f=1MHz
-
45
55
VDD=300V,
-
10
28
ID=2A，
-
25
55
RG=25Ω，
-
20
60
-
25
60
-
9.0
12
-
1.7
-
-
4.5
-
Rise time
Turn-on time
tr
ton
Switching time
pF
ns
Fall time
Turn-off time
tf
(Note4,5)
toff
Total gate charge(gate-source
VDD=320V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=2A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
2.0
A
Pulse drain reverse current
IDRP
-
-
-
8.0
A
Forward voltage(diode)
VDSF
IDR=2.0A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=2.A,VGS=0V,
-
180
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
0.72
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=2A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤2A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
B
WFU2N60
WFU2N60B
Fig.1 On-State Characteristics
Fig.2 Transfer Current characteristics
Fig.3 On Resistance variation
Fig.4 Body Diode Forward Voltage
vsDrain Current
Variation With Source Current
And temperature
Fig.5 On-Resistance Variation vs
Fig.6 Gate Charge Characteristics
Junction Temperature
3/7
Steady, keep you advance
B
WFU2N60
WFU2N60B
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response curve
4/7
Steady, keep you advance
B
WFU2N60
WFU2N60B
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
5/7
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B
WFU2N60
WFU2N60B
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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B
WFU2N60
WFU2N60B
TO251 Package Dimension
Unit:mm
7/7
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