AOD472A TM N-Channel SDMOS POWER Transistor General Description Features VDS (V) = 25V ID = 55A RDS(ON) < 5.5mΩ RDS(ON) < 9.5mΩ TM The AOD472A/L is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. AOD472A and AOD472AL are electrically identical. 100% UIS Tested! 100% R g Tested! -RoHS Compliant -AOD472AL is Halogen Free TO-252 D-PAK Top View D (VGS = 10V) (VGS = 10V) (VGS = 4.5V) D Bottom View G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG TC=25°C Maximum 25 Units V ±20 V 55 Pulsed Drain Current C TC=100°C ID IDM 100 Pulsed Forward Diode CurrentC ISM 100 IAR 50 Avalanche Current C Repetitive avalanche energy L=50uH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case B Maximum Junction-to-TAB B Alpha & Omega Semiconductor, Ltd. 43 EAR 63 W 25 2.5 PDSM W 1.6 TJ, TSTG -55 to 175 Symbol Steady-State mJ 50 PD t ≤ 10s Steady-State Steady-State A °C RθJC Typ 15 41 2.1 Max 20 50 3 Units °C/W °C/W °C/W RθJC-TAB 2.4 3.4 °C/W RθJA www.aosmd.com AOD472A Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 10 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 100 RDS(ON) Static Drain-Source On-Resistance TJ=55°C 50 100 VGS=10V, ID=30A TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VSD IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current G VDS=5V, ID=30A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Units V VDS=25V, VGS=0V Zero Gate Voltage Drain Current gFS Max 25 IDSS IS Typ VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=30A 2 µA nA 2.5 V A 4.4 5.5 6.6 8.2 7.8 9.5 mΩ 1 V 50 A mΩ 65 0.7 S 1500 1800 2200 pF 340 445 580 pF 200 285 400 pF 1.1 1.6 2.4 Ω 25 31 40 nC 12 15 20 nC 3.5 4.8 7 nC 6.5 8.9 13 nC VGS=10V, VDS=12.5V, RL=0.42Ω, RGEN=3Ω 8 ns 10.4 ns 29 ns 9 ns trr Body Diode Reverse Recovery Time IF=30A, dI/dt=500A/µs 9.5 12 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs 17 21 15 26 ns nC 2 A: The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev1 : Nov. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD472A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 10V 5V VDS=5V 4.5V 80 60 7V ID(A) ID (A) 60 4V 40 40 20 20 125°C VGS=3.5V 25°C 0 0 0 1 2 3 4 0 5 1 12 Normalized On-Resistance RDS(ON) (mΩ) 3 4 5 2 10 VGS=4.5V 8 6 4 VGS=10V 2 0 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.8 1.6 VGS=10V, 30A 17 5 2 VGS=4.5V, 20A10 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 0 200 Temperature (°C) 18 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 20 ID=30A 1.0E+01 40 15 1.0E+00 IS (A) RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 10 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 1.0E-04 25°C 1.0E-05 0 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD472A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2800 10 VDS=12.5V ID=30A 2400 Capacitance (pF) VGS (Volts) 8 6 4 2 1200 Coss 800 Crss 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 0 35 1000.0 10µs 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 RDS(ON) limited 10µs 100µs DC 1m 1.0 10ms 0.1 TJ(Max)=175°C TC=25°C 0.0 0.01 TJ(Max)=175°C TC=25°C 160 Power (W) 10.0 5 200 100.0 ID (Amps) 1600 400 0 17 5 2 10 120 80 40 0.1 1 VDS (Volts) 10 100 10 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance Ciss 2000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 40 1 PD 0.1 Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD472A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 TA=25°C 70 Power Dissipation (W) ID(A), Peak Avalanche Current 80 60 TA=100°C 50 TA=150°C 40 30 20 TA=125°C 10 50 40 30 20 10 0 0 0.000001 0.00001 0.0001 0 0.001 25 75 100 125 150 175 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 50 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 30 20 17 100 5 2 10 10 10 1 1E05 0 0 25 50 75 100 125 150 1E- 0.001 0.01 0.1 1 10 100 1000 0 04 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 175 TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 100 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 40 1 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD472A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 di/dt=700A/us 125ºC 25 3 16 12 di/dt=700A/us 14 10 125ºC 2.5 12 15 6 125ºC 10 Irm 25ºC 2 0 15 20 25 30 0 0 5 10 20 25 2.5 Is=20A 125ºC 125ºC 4 25ºC 2 10 125º 25ºC Irm 0 100 200 300 400 500 600 700 0 800 di/dt (A/µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 1 S 10 0 1.5 trr trr (ns) 6 2 15 Irm (A) 25ºC 5 30 20 8 Qrr 15 IB (A) Figure 18: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 10 Is=20A 0.5 25ºC 125ºC 20 Qrr (nC) S 0 30 IB (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 15 1 S 10 1.5 125ºC 2 0 5 25ºC 8 4 5 25 trr 6 4 0 2 10 S 25ºC trr (ns) 8 Qrr Irm (A) Qrr (nC) 20 5 25ºC 0.5 0 0 100 200 300 400 500 600 700 0 800 di/dt (A/µs) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.aosmd.com AOD472A Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com