AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. VDS (V) = 30V ID = 80A (VGS = 10V) RDS(ON) < 3.7mΩ (VGS = 10V) RDS(ON) < 5mΩ (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! D Fits SOIC8 footprint ! Top View S D S D S D G D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode G S DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Continuous Drain Current V A 210 19 IDSM TA=70°C ±20 63 IDM TA=25°C Units V 80 ID TC=100°C Maximum 30 A 15 Avalanche Current C IAR 40 A Repetitive avalanche energy L=0.1mH C EAR 80 mJ TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 2.5 W 1.6 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD TC=100°C RθJA RθJC Typ 14.2 42 1.2 °C Max 17 60 1.5 Units °C/W °C/W °C/W www.aosmd.com AON6718L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 On state drain current VGS=10V, VDS=5V 160 RDS(ON) Static Drain-Source On-Resistance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 2.2 V A 5.2 VGS=4.5V, ID=20A 4.1 5 VDS=5V, ID=20A 87 DYNAMIC PARAMETERS Ciss Input Capacitance Rg µA 3.7 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 1.8 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A mA 0.1 4.3 Forward Transconductance Units V 3.1 VSD Output Capacitance 0.1 20 TJ=125°C gFS Crss 0.025 TJ=125°C VGS=10V, ID=20A Coss Max 30 IDSS IS Typ 0.4 mΩ mΩ S 1 V 40 A 2975 3719 4463 pF 485 693 900 pF 204 340 476 pF 0.28 0.56 0.84 Ω 48 60 72 nC 20 25 30 nC 12 15 18 nC 10 14 nC 6 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 9.2 ns 10.7 ns 40 ns 12.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 10 13 16 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 21 26.5 32 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev0: Oct-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6718L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 160 120 10V 140 VDS=5V 10V 100 5V 120 4V 4.5V ID(A) ID (A) 80 3.5V 100 80 60 60 40 40 125°C VGS=3V 20 20 25°C 0 0 0 1 2 3 4 0 5 6 2 3 4 5 Normalized On-Resistance 1.8 5 VGS=4.5V RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 3 VGS=10V 2 1 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 17 5 2 10 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 9 1.0E+02 ID=20A 40 1.0E+01 125°C IS (A) RDS(ON) (mΩ) 7 5 3 125°C 1.0E+00 25°C 1.0E-01 25°C 1.0E-02 1 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AON6718L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=15V ID=20A 5000 Capacitance (pF) VGS (Volts) 8 6 4 2 2000 Coss Crss 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 60 0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 RDS(ON) limited 10µs 100µs DC 1ms 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 17 5 2 10 240 160 80 1 VDS (Volts) 10 100 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=150°C TC=25°C 320 Power (W) 10µs 100.0 10.0 5 400 1000.0 ID (Amps) 3000 1000 0 ZθJC Normalized Transient Thermal Resistance Ciss 4000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6718L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 180 TA=25°C 160 Power Dissipation (W) IAR (A) Peak Avalanche Current 200 140 TA=100°C 120 100 80 60 TA=150°C TA=125°C 40 60 40 20 20 0 0 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 100 10000 80 1000 TA=25°C Power (W) Current rating ID(A) 80 60 40 17 5 2 10 100 10 20 1 0.00001 0 0 25 50 75 100 125 ZθJA Normalized Transient Thermal Resistance 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.1 0 18 TCASE (°C) Figure 14: Current De-rating (Note F) 10 0.001 150 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6718L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.7 20A 0.6 1.0E-02 VDS=30V 10A 0.5 VSD (V) IR (A) 1.0E-03 VDS=15V 1.0E-04 0.4 5A IS=1A 0.3 1.0E-05 0.2 1.0E-06 0.1 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 38 di/dt=800A/µs 36 125ºC 14 16 12 14 10 25ºC 32 Qrr 30 125ºC 6 26 0 5 10 15 20 25 2 2 0 0 0.5 0 5 10 15 20 2.5 2 18 125ºC 4 125ºC 15 1.5 trr (ns) 6 20 12 25ºC 25ºC 2 Irm trr 125º 9 10 30 Is=20A 21 8 Qrr 25 24 Irm (A) Qrr (nC) 25ºC IS (A) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 25ºC 5 1 125ºC 25 15 125ºC S 0 10 Is=20A 2 25ºC 1.5 IS (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 30 2.5 8 30 35 125ºC trr 4 25ºC 28 3 di/dt=800A/µs 6 4 Irm 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 10 trr (ns) 8 50 12 Irm (A) Qrr (nC) 34 0 S 50 S 0 1 S 6 0.5 25ºC 3 0 0 200 400 600 800 0 1000 di/dt (A/µs) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 0 0 200 400 600 800 0 1000 di/dt (A/µs) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com AON6718L Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com