AOSMD AON6718L

AON6718L
N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
General Description
Features
SRFETTM AON6718L uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
ideally suited for use as a low side switch in CPU core
power conversion.
VDS (V) = 30V
ID = 80A
(VGS = 10V)
RDS(ON) < 3.7mΩ
(VGS = 10V)
RDS(ON) < 5mΩ
(VGS = 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R g Tested!
D
Fits SOIC8
footprint !
Top View
S
D
S
D
S
D
G
D
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
DFN5X6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
V
A
210
19
IDSM
TA=70°C
±20
63
IDM
TA=25°C
Units
V
80
ID
TC=100°C
Maximum
30
A
15
Avalanche Current C
IAR
40
A
Repetitive avalanche energy L=0.1mH C
EAR
80
mJ
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
2.5
W
1.6
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
TC=100°C
RθJA
RθJC
Typ
14.2
42
1.2
°C
Max
17
60
1.5
Units
°C/W
°C/W
°C/W
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AON6718L
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
VDS=30V, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
ID(ON)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
On state drain current
VGS=10V, VDS=5V
160
RDS(ON)
Static Drain-Source On-Resistance
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
2.2
V
A
5.2
VGS=4.5V, ID=20A
4.1
5
VDS=5V, ID=20A
87
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
µA
3.7
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
1.8
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
mA
0.1
4.3
Forward Transconductance
Units
V
3.1
VSD
Output Capacitance
0.1
20
TJ=125°C
gFS
Crss
0.025
TJ=125°C
VGS=10V, ID=20A
Coss
Max
30
IDSS
IS
Typ
0.4
mΩ
mΩ
S
1
V
40
A
2975
3719
4463
pF
485
693
900
pF
204
340
476
pF
0.28
0.56
0.84
Ω
48
60
72
nC
20
25
30
nC
12
15
18
nC
10
14
nC
6
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
9.2
ns
10.7
ns
40
ns
12.5
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
10
13
16
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
21
26.5
32
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev0: Oct-08
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AON6718L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
120
10V
140
VDS=5V
10V
100
5V
120
4V
4.5V
ID(A)
ID (A)
80
3.5V
100
80
60
60
40
40
125°C
VGS=3V
20
20
25°C
0
0
0
1
2
3
4
0
5
6
2
3
4
5
Normalized On-Resistance
1.8
5
VGS=4.5V
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
3
VGS=10V
2
1
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
17
5
2
10
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
9
1.0E+02
ID=20A
40
1.0E+01
125°C
IS (A)
RDS(ON) (mΩ)
7
5
3
125°C
1.0E+00
25°C
1.0E-01
25°C
1.0E-02
1
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON6718L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
VDS=15V
ID=20A
5000
Capacitance (pF)
VGS (Volts)
8
6
4
2
2000
Coss
Crss
0
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
60
0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
RDS(ON)
limited
10µs
100µs
DC
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
17
5
2
10
240
160
80
1
VDS (Volts)
10
100
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
TJ(Max)=150°C
TC=25°C
320
Power (W)
10µs
100.0
10.0
5
400
1000.0
ID (Amps)
3000
1000
0
ZθJC Normalized Transient
Thermal Resistance
Ciss
4000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AON6718L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
180
TA=25°C
160
Power Dissipation (W)
IAR (A) Peak Avalanche Current
200
140
TA=100°C
120
100
80
60
TA=150°C
TA=125°C
40
60
40
20
20
0
0
0.000001
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
10000
80
1000
TA=25°C
Power (W)
Current rating ID(A)
80
60
40
17
5
2
10
100
10
20
1
0.00001
0
0
25
50
75
100
125
ZθJA Normalized Transient
Thermal Resistance
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
0
18
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
0.001
150
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AON6718L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.7
20A
0.6
1.0E-02
VDS=30V
10A
0.5
VSD (V)
IR (A)
1.0E-03
VDS=15V
1.0E-04
0.4
5A
IS=1A
0.3
1.0E-05
0.2
1.0E-06
0.1
100
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
38
di/dt=800A/µs
36
125ºC
14
16
12
14
10
25ºC
32
Qrr
30
125ºC
6
26
0
5
10
15
20
25
2
2
0
0
0.5
0
5
10
15
20
2.5
2
18
125ºC
4
125ºC
15
1.5
trr (ns)
6
20
12
25ºC
25ºC
2
Irm
trr
125º
9
10
30
Is=20A
21
8
Qrr
25
24
Irm (A)
Qrr (nC)
25ºC
IS (A)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
25ºC
5
1
125ºC
25
15
125ºC
S
0
10
Is=20A
2
25ºC
1.5
IS (A)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
30
2.5
8
30
35
125ºC
trr
4
25ºC
28
3
di/dt=800A/µs
6
4
Irm
100
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
10
trr (ns)
8
50
12
Irm (A)
Qrr (nC)
34
0
S
50
S
0
1
S
6
0.5
25ºC
3
0
0
200
400
600
800
0
1000
di/dt (A/µs)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
0
0
200
400
600
800
0
1000
di/dt (A/µs)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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AON6718L
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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