AON7784 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON7784 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS 30V 50A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 3.5mΩ RDS(ON) (at VGS = 4.5V) < 4mΩ 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 Top View Bottom View D Top View 1 8 2 7 3 6 4 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 1 : Mar. 2011 IAS, IAR 34 A EAS, EAR 58 mJ 83 Steady-State Steady-State W 33 6.2 RθJA RθJC www.aosmd.com W 4 TJ, TSTG Symbol t ≤ 10s A 25 PDSM TA=70°C A 31 PD TC=100°C V 265 IDSM TA=70°C ±12 39 IDM TA=25°C Continuous Drain Current Units V 50 ID TC=100°C Maximum 30 -55 to 150 Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W Page 1 of 7 AON7784 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=10mA, VGS=0V 0.5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 265 TJ=125°C 100 100 VGS=10V, ID=20A 5.5 VGS=4.5V, ID=20A 3.2 4 VDS=5V, ID=20A 110 S 0.4 V Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime V A 4.3 gFS Rg 2.1 nA 3.5 Static Drain-Source On-Resistance Output Capacitance 1.6 mA 2.8 RDS(ON) Reverse Transfer Capacitance Units V VDS=30V, VGS=0V Zero Gate Voltage Drain Current Coss Max 30 IDSS Crss Typ mΩ mΩ 50 A 3000 3800 4600 pF 280 400 520 pF 150 260 370 pF 0.3 0.6 0.9 Ω 22 28 34 VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω nC 8 nC 9 nC 10 ns 6 ns 55 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 8 11 14 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 13 17 21 6 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Mar. 2011 www.aosmd.com Page 2 of 7 AON7784 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 10V 80 80 4.5V 60 ID(A) ID (A) 60 3V 40 40 125°C VGS=2.5V 20 20 25°C 0 0 0 1 2 3 4 1.5 5 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4.0 Normalized On-Resistance 2 3.6 RDS(ON) (mΩ ) 2 VGS=4.5V 3.2 2.8 VGS=10V 2.4 1.8 VGS=4.5V ID=20A 1.6 1.4 VGS=10V ID=20A 1.2 17 5 2 10 1 0.8 2.0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 9 1.0E+02 ID=20A 1.0E+01 40 125°C 1.0E+00 125°C IS (A) RDS(ON) (mΩ ) 6 3 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: Mar. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON7784 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=15V ID=20A 4500 Ciss 4000 Capacitance (pF) VGS (Volts) 8 6 4 2 3500 3000 2500 2000 1500 Crss 1000 Coss 500 0 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 1000.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 400 10µs RDS(ON) limited 100µs 1ms 10ms DC 10.0 1.0 350 10µs TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 300 Power (W) 100.0 ID (Amps) 5 250 17 5 2 10 200 150 100 0.1 50 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Mar. 2011 www.aosmd.com Page 4 of 7 AON7784 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 80 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C TA=100°C 100 TA=150°C TA=125°C 70 60 50 40 30 20 10 10 0 1 10 100 1000 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 150 30 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 0.01 PD Single Pulse 0.001 Ton T 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: Mar. 2011 www.aosmd.com Page 5 of 7 AON7784 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.7 0.6 1.0E-02 20A 10A 0.5 VDS=30V 0.4 VSD (V) IR (A) 1.0E-03 VDS=15V 1.0E-04 5A 0.3 IS=1A 0.2 1.0E-05 0.1 0 0 50 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 30 12 3 di/dt=800A/µs 10 6 125ºC 10 trr (ns) 25ºC Qrr 4 25ºC 0 0 5 10 15 20 25 2 0 0 30 25ºC 0 5 trr trr (ns) 4 25ºC 2 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 1: Mar. 2011 25 Is=20A 30 4.5 4 125ºC 3.5 3 25ºC 2.5 9 2 25ºC 6 0 20 5 15 Irm (A) Qrr (nC) 125ºC Irm 15 12 6 Qrr 5 10 18 8 25ºC 10 0.5 IS (A) Figure 19: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 10 15 1 S 0 Is=20A 125ºC 2 1.5 IS (A) Figure 18: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 20 25ºC 125ºC 2 25 2.5 6 4 Irm 5 trr 8 Irm (A) Qrr (nC) 8 15 125ºC 10 125ºC 20 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 12 di/dt=800A/µs 25 50 1.5 1 S 3 S 0 S 1.0E-06 125º 0.5 0 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 21: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com Page 6 of 7 AON7784 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: Mar. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7