AP4407GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Low On-resistance
D
D
▼ Fast Switching
G
▼ RoHS Compliant
SO-8
S
BVDSS
-30V
RDS(ON)
14mΩ
ID
-10.7A
S
S
D
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-30
V
+25
V
3
-10.7
A
3
-8.6
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-50
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient 3
50
℃/W
Data and specifications subject to change without notice
1
200809152
AP4407GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
2
Min. Typ. Max. Units
-30
-
-
V
-
-0.015
-
V/℃
VGS=-10V, ID=-10A
-
-
14
mΩ
VGS=-4.5V, ID=-5A
-
-
25
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-10A
-
13
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= +25V
-
-
+100
nA
ID=-10A
-
28
45
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
5.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
19.8
-
nC
VDS=-15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=6.8Ω,VGS=-10V
-
97
-
ns
tf
Fall Time
RD=15Ω
-
72
-
ns
Ciss
Input Capacitance
VGS=0V
-
1960 3200
pF
Coss
Output Capacitance
VDS=-25V
-
590
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
465
-
pF
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Min. Typ. Max. Units
IS=-2.0A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
36
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
34
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4407GM-HF
40
T A =25 o C
30
T A =150 o C
-10V
-5.0V
-4.5V
-4.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
40
20
V G =-3.0V
10
-10V
-5.0V
-4.5V
-4.0V
30
20
V G =-3.0V
10
0
0
0
1
2
0
3
-V DS , Drain-to-Source Voltage (V)
1
1
2
2
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
25
1.80
I D =-10A
I D =-10A
V GS = -10V
1.60
Normalized RDS(ON)
RDS(ON) (mΩ)
T A =25 o C
20
15
1.40
1.20
1.00
0.80
10
0.60
3
5
7
9
11
-50
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.6
100.00
2.2
10.00
T j =25 o C
-VGS(th) (V)
-IS(A)
o
T j =150 C
1.00
1.8
1.4
0.10
1
0.01
0.6
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4407GM-HF
I D = -10A
V DS = -24V
12
10
Ciss
8
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MH
10000
14
6
1000
Coss
Crss
4
2
0
100
0
2
4
6
8
10
12
14
16
18
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
100us
10
1ms
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
10ms
1
100ms
1s
10s
DC
0.1
T A =25 o C
Single Pulse
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 125℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
8
7
6
5
E1
1
2
3
4
e
B
E
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
c
0.19
0.22
0.25
D
4.80
4.90
5.00
E
5.80
6.15
6.50
E1
3.80
3.90
4.00
e
1.27 TYP
G
0.254 TYP
L
0.38
－
0.90
α
0.00
4.00
8.00
A
A1
G
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
4407GM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
5