AUSTIN SMJ44400

DRAM
SMJ44400
Austin Semiconductor, Inc.
1M x 4 DRAM
PIN ASSIGNMENT
(Top View)
DYNAMIC RANDOM-ACCESS
MEMORY
20-Pin DIP (JD)
20-Pin Flatpack (HR)
(400 MIL)
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-90847
• MIL-STD-883
DQ1
DQ2
W\
RAS\
A9
A0
A1
A2
A3
Vcc
FEATURES
• Organized 1,048,576 x 4
• Single +5V ±10% power supply
• Enhanced Page-Mode operation for faster memory access
P Higher data bandwidth than conventional page-mode
parts
P Random Single-Bit Access within a row with a column
address
• CAS\-Before-RAS\ (CBR) Refresh
• Long Refresh period: 1024-cycle Refresh in 16ms (Max)
• 3-State unlatched Output
• Low Power Dissipation
• All Inputs/Outputs and Clocks are TTL Compatible
• Processing to MIL-STD-883, Class B available
OPTIONS
Pin Name
A0 - A9
CAS\
DQ1 - DQ4
OE\
RAS\
W\
Vcc
Vss
MARKING
• Timing
80ns access
100ns access
120ns access
• Package(s)
Ceramic DIP (400mils)
Ceramic Flatpack
20
19
18
17
16
15
14
13
12
11
Vss
DQ4
DQ3
CAS\
OE\
A8
A7
A6
A5
A4
Function
Address Inputs
Column-Address Strobe
Data Inputs/Outputs
Output Enable
Row-Address Strobe
Write Enable
5V Supply
Ground
The SMJ44400 is offered in a 400-mil, 20-pin ceramic
side-brazed dual-in-line package (JD suffix) and a 20-pin
ceramic flatpack (HR suffix) that are characterized for
operation from -55°C to +125°C.
-80
-10
-12
OPERATION
JD
HR
No. 113
No. 308
Enhanced Page Mode
Enhanced page-mode operation allows faster memory
access by keeping the same row address while selecting
random column addresses. The time for row-address setup
and hold and address multiplex is eliminated. The maximum
number of columns that can be accessed is determined by the
maximum RAS\ low time and the CAS\ page cycle time used.
With minimum CAS\ page cycle time, all 1024 columns
specified by column addresses A0 through A9 can be accessed
without intervening RAS\ cycles.
Unlike conventional page-mode DRAMs, the columnaddress buffers in this device are activated on the
• Operating Temperature Ranges
M
Military (-55oC to +125oC)
GENERAL DESCRIPTION
The SMJ44400 is a series of 4,194,304-bit dynamic random-access memories (DRAMs), organized as 1,048,576
words of four bits each. This series employs state-of-the-art
technology for high performance, reliability, and low-power
operation.
The SMJ44400 features maximum row access times of
80ns, 100ns, and 120ns. Maximum power dissipation is as
low as 360mW operating and 22mW standby.
All inputs and outputs, including clocks, are compatible
with Series 54 TTL. All addressses and data-in lines are latched
on-chip to simplify system design. Data out is unlatched to
allow greater system flexibility.
SMJ44400
Rev. 2.0 10/01
1
2
3
4
5
6
7
8
9
10
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please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
DRAM
Austin Semiconductor, Inc.
SMJ44400
(continued)
Enhanced Paga Mode (continued)
falling edge of RAS\. The buffers act as transparent or flowthrough latches while CAS\ is high. The falling edge of CAS\
latches the column addresses. This feature allows the
SMJ44400 to operate at a higher data bandwidth then conventional page-mode parts, since data retrieval begins as soon as
column address is valid rather than when CAS\ goes low. This
performance improvement is referred to as enhanced page
mode. Valid column address can be presented immediately
after row address hold time has been satisfied, usually well in
advance of the maximum (access time from column address)
has been satisfied. In the event that column addresses for the
next cycle are valid at the time CAS\ goes high, access time
for the next cycle is determined by the later occurrence of
tCAC or tCPA (access time form rising edge of CAS\).
Output Enable (OE\)
OE\ controls the impedance of the output buffers. When
OE\ is high, the buffers remain in the high-impedance state.
Bringing OE\ low during a normal cycle activates the output
buffers, putting them in the low-impedance state. It is
necessary for both RAS\ and CAS\ to be brought low for the
output buffers to go into the low-impedance state. Once in
the low-ompedance state, they remain in the low-impedance
state until either OE\ or CAS\ is brought high.
Refresh
A refresh operation must be performed at least once every
16ms to retain data. This can be achieved by strobing each of
the 1024 rows (A0-A9). A normal read or write cycle
refreshes all bits in each row that is selected. A RAS\-only
operation can be used by holding CAS\ at the high (inactive)
level, conserving power as the output buffer remains in the
high-impedance state. Externally generated addresses must
be used for a RAS\-only refresh. Hidden refresh can be
performed while maintaining valid data at teh output pin. This
is accomplished by holding CAS\ at VIL after a read operation
and cycling RAS\ after a specified precharge period, similar
to a RAS\-only refresh cycle. The external address is ignored
during the hidden refresh cycles.
Address (A0-A9)
Twenty address bits are required to decode 1 of 1,048,576
storage cell locations. Ten row-address bits are set up on
inputs A0 through A9 and latched onto the chip by RAS\. The
ten column-address bits are set up on pins A0 through A9 and
latched onto the chip by CAS\. All addresses must be stable
on or before the falling edges of RAS\ and CAS\. RAS\ is
similar to a chip enable in that it activates the sense
amplifiers as well as the row decoder. CAS\ is used as a chip
select, activating the output buffer as well as latching the
address bits into the column-address buffer.
CAS\-before-RAS\ (CBR) and hidden refresh
CBR refresh is utilized by bringing CAS\ low earlier than
RAS\ (see parameter tCSR) and holding it low after RAS\ falls
(see parameter tCSR). For successive CBR refresh cycles,
CAS\ can remain low while cycling RAS\. The external
address is ignored and the refresh address is generated
internally. During CBR refresh cycles the outputs remain in
the high-impedance state.
Hidden refresh can be performed while maintaining valid
data at the output pins. Thsi is accomplished by holding CAS\
at VIL after a read operation. RAS\ is cycled after the
specified read cycle parameters are met. Hidden refresh can
also be used in conjuction with an early-write cycle. CAS\ is
maintained at VIL while RAS\ is cycled, once all the specified
early-write parameters are met. Externally generated
addresses must be used to specify the location to be accessed
during the initial RAS\ cycle of a hidden refresh operation.
Subsequent RAS\ cycles (refresh cycles) use the internallygenerated addresses and the external address is ignored.
Write Enable (W\)
The read or write mode is selected through W\. A logic
high on the W\ input selects the read mode and a logic low
selects the write mode. The write-enable terminal can be
driven from standard TTL circuits without a pullup resistor.
The data input is disabled when the read mode is selected.
When W\ goes low prior to CAS\ (early write), data out
reamins in the high-impedance state for the entire cycle
permitting a write operation independent of the state of OE\.
This permits early-write operation to be completed with OE\
grounded.
Data In/Out (DQ1 - DQ4)
The high-impedance output buffer provides direct TTL
compatibility (no pullup resistor required) with a fanout of
two Series 54 TTL loads. Data out is the same polarity as data
in. The output is in the high-impedance (floating) state until
CAS\ and OE\ are brought low. In a read cycle the output
becomes valid after all access times are satisfied. The output
remains valid while CAS\ and OE\ are low. CAS\ or OE\ going
high returns it to the high-impedance state.
SMJ44400
Rev. 2.0 10/01
Power Up
To achieve proper device operation, an initial pause of
200µs followed by a minimum of eight initialization cycles is
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
DRAM
SMJ44400
Austin Semiconductor, Inc.
cycle is used to enter test mode. In the test mode, data is
written into and read from eight sections of the array in
parallel. All data is written into the array through DQ1. Data
is comparted upon reading and if all bits are equal, all DQ pins
go high. If any one bit is different, all the DQ pins go low.
Any combination read, write, read-write, or page-mode can
be used in the test mode. The test mode function reduces test
times by enabling the 1M x 4-bit DRAM to be tested as if it
were a 512K DRAM where column address 0 is not used. A
RAS\-only or CBR refresh cycle is used to exit the DFT mode.
(continued)
Power Up (continued)
required after full Vcc level is achieved. These eight initialization cycles need to include at least one refresh (RAS\-only
or CBR) cycle.
Test Mode
An industry standard Design For Test (DFT) mode is
incorporated in the SMJ44400. A CBR with W\ low (WCBR)
LOGIC SYMBOL1
RAM 1024K x 4
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
RAS\
6
7
8
9
11
12
13
14
15
5
4
20D10/21D0
A
0
1 048 575
20D19/21D9
C20[Row]
G23/[Refresh Row]
24[Power Down]
C21[Column]
G24
CAS\
17
3
W\
16
OE\
DQ1
1
2
DQ2
18
DQ3
19
DQ4
&
23C22
23,21D
G25
24,25EN
A, Z26
A, 22D
26
1. This symbol is in accordance with ANSI/IEEE Std. 91-1984 and IEC Publication 617-12. The pinouts illustrated are for the JD package.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
DRAM
SMJ44400
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
RAS\
CAS\
W\
OE\
Timeing and Control
A0
A1
8
Column
Address
Buffers
2
A9
Column Decode
Sense Amplifiers
128K Array
128K Array
R
128K Array
128K Array
O
W
16
16
D
E
C
O
D
E
R
16
Row
Address
Buffers
10
128K Array
16
I/O
Buffers
4 of 16
Selection
4
Data
In
Reg.
4
Data
Out
Reg.
2
128K Array
10
ABSOLUTE MAXIMUM RATINGS*
*Stresses greater than those listed under "Absolute
Maximum Ratings" may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
** Junction temperature depends upon package type,
cycle time, loading, ambient temperature and airflow.
Voltage on Vcc Supply Relative to Vss...............-1V to +7.0V
Voltage Range on Any Pin Relative to Vss.........-1V to +7.0V
Short Circuit Output Current (per I/O)….......................50mA
Power Dissipation.................................................................1W
Storage Temperature Range..........................-65°C to +150°C
Operating Temperature Range......................-55°C to +125°C
RECOMMENDED OPERATING CONDITIONS
SYM
DESCRIPTION
MIN
NOM
MAX
UNIT
4.5
5
5.5
V
2.4
6.5
V
VIL Low-Level Input Voltage
-1
0.8
V
TA
Minimum Operating Temperature
-55
TC
Maximum Operating Case Temperature
VCC Supply Voltage
VIH High-Level Input Voltage
1
°C
125
°C
1. The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used for logic-voltage levels only.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
DRAM
SMJ44400
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(-55oC<TA<125oC or -40oC to +85oC; Vcc = 5V +10%)
-8
-10
-12
SYM
VOH
PARAMETER
High-level output voltage
VOL Low-level output voltage
TEST CONDITIONS
MIN MAX MIN MAX MIN MAX UNIT
2.4
2.4
2.4
V
IOH = -5mA
IOL = 4.2mA
VCC = 5.5V, VI = 0V to 6.5V, All
0.4
0.4
0.4
V
±10
±10
±10
µA
II
Input current (leakage)
IO
Output current (leakage)
VCC = 5.5V, VO = 0V to VCC,
CAS\ High
±10
±10
±10
µA
ICC1 Read - or write-cycle current1
VCC = 5.5V, Minimum cycle
85
80
70
mA
ICC2 Standby current
After 1 memory cycle,
RAS\ and CAS\ High,
VIH = 2.4V
4
4
4
mA
VCC = 5.5V, Minimum cycle,
RAS\ cycling,
CAS\ High (RAS\ only),
RAS\ Low after CAS\ Low (CBR)
85
75
65
mA
VCC = 5.5V, tPC = minimum,
RAS\ Low, CAS\ cycling
50
40
35
mA
ICC3
Average refresh current
1
(RAS\ only, or CBR\)
ICC4 Average page current2
other pins = 0V to VCC
CAPACITANCE (f = 1MHz)3
SYM
MAX
UNIT
Input capacitance, address inputs
7
pF
Ci(RC)
Input capacitance, strobe inputs
10
pF
Ci(W)
Input capacitance, write-enable inputs
10
pF
Output capacitance
10
pF
Ci(A)
CO
PARAMETER
SWITCHING CHARACTERISTICS (-55oC<TA<125oC or -40oC to +85oC; Vcc = 5V +10%)
SYM
tAA
PARAMETERS
Access time from column address
-8
MAX
40
-10
MAX
45
-12
MAX
55
UNIT
ns
tCAC
Access time from CAS\ low
20
25
30
ns
tCPA
Access time from column precharge
45
50
55
ns
tRAC
Access time from RAS\ low
80
100
120
ns
tOEA
Access time from OE\ low
20
25
30
ns
20
25
30
ns
20
25
30
ns
tOFF
tOEZ
4
Output disable time after CAS\ High
Output disable tiem after OE\ High
4
NOTES:
1. Measured with a maximum of one address change while RAS\ = VIL.
2. Measured with a maximum of one address change while CAS\ = VIH.
3. VCC = 5V ±0.5V and the bias on the pins under test is 0V. Capacitance is sampled only at initial design and after any major change.
4. tOFF and tOEZ are specified when the output is no longer driven. The outputs are disabled by bringing either OE\ or CAS\ High.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
DRAM
SMJ44400
Austin Semiconductor, Inc.
TIMING REQUIREMENTS (-55oC<TA<125oC or -40oC to +85oC; Vcc = 5V +10%)
SYM
tRC
tRWC
tPC
tPRWC
PARAMETER
MIN
150
1
Cycle time, random read or write
Cycle time, read-write
Cycle time, page-mode read or write
2
Cycle time, page-mode read-write
3
-8
MAX
MIN
180
-10
MAX
MIN
210
-12
MAX
UNIT
ns
205
245
285
ns
50
60
65
ns
100
120
135
ns
80
100000 100 100000 120 100000
ns
80
10000
ns
20
10000
tRASP
Pulse duration, page mode, RAS\ low
tRAS
Pulse duration, nonpage mode, RAS\ low
tCAS
Pulse duration, CAS\ low
tCP
Pulse duration, CAS\ High
10
10
15
ns
3
4
100
10000
25
10000
120
10000
30
10000
ns
tRP
Pulse duration, RAS\ High (precharge)
60
70
80
ns
tWP
Pulse duration, write
15
20
25
ns
tASC
Setup time, column address before CAS\ low
0
0
0
ns
tASR
Setup time, row address before RAS\ low
0
0
0
ns
tDS
Setup time, data
5
0
0
0
ns
tRCS
Setup time, read before CAS\ low
0
0
0
ns
tCWL
Setup time, W\ low before CAS\ high
20
25
30
ns
tRWL
Setup time, W\ low before RAS\ high
20
25
30
ns
tWCS
Setup time, W\ low before CAS\ low
(early-write operation only)
0
0
0
ns
tWSR
Setup time, W\ High (CBR refresh only)
10
10
10
ns
tCAH
Hold time, column address after CAS\ low
15
20
20
ns
tDHR
Hold time, data after RAS\ low
5
tDH
Hold time, data
tAR
Hold time, column address after CAS\ low
tRAH
Hold time, row address after RAS\ low
tRCH
Hold time, read after CAS\ High
Hold time, read after RAS\ High
Hold time, write after CAS\ low
(early-write operation only)
tRRH
tWCH
4
60
75
90
ns
15
20
25
ns
60
75
90
ns
10
15
15
ns
6
0
0
0
ns
6
0
0
0
ns
15
20
25
ns
ns
4
tWCR
Hold time, write after RAS\ low
60
75
90
tWHR
Hold time, W\ High (CBR refresh only)
10
10
10
ns
tOEH
Hold time, OE\ command
20
25
30
ns
tROH
20
25
30
ns
70
80
90
ns
20
20
25
ns
tCRP
Hold time, RAS\ referenced to OE\
Delay time, column address to W\ low
(read-write operation only)
Delay time, RAS\ low to CAS\ High
(CBR refresh only)
Delay time, CAS\ High to RAS\ low
0
0
0
ns
tCSH
Delay time, RAS\ low to CAS\ High
80
100
120
ns
tCSR
Delay time, CAS\ low to RAS\ low
(CBR refresh only)
10
10
10
ns
tCWD
Delay time, CAS\ low to W\ low
(read-write operation only)
50
60
70
ns
tAWD
tCHR
NOTES:
1. All cycle times assume tT = 5ns.
2. To assure tPC min, tASC should be > tCP.
3. In a read-write cycle, tRWD and tRWL must be observed.
4. In a read-write cycle, tCWD and tCWL must be observed.
5. Referenced to the later of CAS\ or W\ in write operations.
6. Either tRRH or tRCH must be satisfied for a read cycle.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
DRAM
SMJ44400
Austin Semiconductor, Inc.
TIMING REQUIREMENTS (continued)
SYM
PARAMETER
1
MIN
15
-8
MAX
40
MIN
20
-10
MAX
50
MIN
20
-12
MAX
65
UNIT
ns
tRAD
Delay time, RAS\ low to column address
tRAL
Delay time, column addresss to RAS\ High
40
50
55
ns
tCAL
Delay time, column addresss to CAS\ High
40
50
55
ns
1
20
60
25
75
25
90
ns
tRCD
Delay time, RAS\ low to CAS\ low
tRPC
Delay time, RAS\ High to CAS\ low
0
0
0
ns
tRSH
Delay time, CAS\ low to RAS\ High
20
25
30
ns
tRWD
Delay time, RAS\ low to W\ low
(read-write operation only)
110
135
160
ns
tCLZ
CAS\ to output in low Z
tOED
OE\ to data delay
tREF
Refresh time interval
2
0
0
0
ns
20
25
30
ns
16
16
16
ms
3
tT
Tranistion time
NOTES:
1. Maximum value specified only to assure access time.
2. Valid data is presented at the outputs after all access times are satisfied but can go from the high-impedance state to an invalid-data state prior to the specified access times as the outputs are driven when
CAS\ and OE\ are low.
3. Transition times (rise and fall) for RAS\ and CAS\ are to be a minimum of 3ns and a maximum of 50ns.
PARAMETER MEASUREMENT INFORMATION
Figure 1. Load Circuit for Timing Parameters
5V
1.31V
R1 = 828Ω
RL = 218Ω
Output Under Test
Output Under Test
R2 = 295Ω
CL = 100 pF1
CL = 100 pF1
(a) LOAD CIRCUIT
(b) ALTERNATE LOAD CIRCUIT
NOTES:
1. CL includes probe and fixture capacitance.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
DRAM
Austin Semiconductor, Inc.
SMJ44400
READ-CYCLE TIMING
1
NOTES:
1. Valid data is presented at the outputs after all access times are satisfied but can go from the high-impedance state to an invalid-data state prior to the specified access tiems as the outputs are driven when
CAS\ and OE\ are low.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
DRAM
Austin Semiconductor, Inc.
SMJ44400
EARLY-WRITE-CYCLE TIMING
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
DRAM
Austin Semiconductor, Inc.
SMJ44400
WRITE-CYCLE TIMING
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
DRAM
Austin Semiconductor, Inc.
SMJ44400
READ-WRITE CYCLE TIMING
(1)
NOTES:
1. Valid data is presented at the outputs after all access times are satisfied but can go from the high-impedance state to an invalid-data state prior to the specified access tiems as the outputs are driven when
CAS\ and OE\ are low.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
DRAM
SMJ44400
Austin Semiconductor, Inc.
ENHANCED-PAGE-MODE READ-CYCLE TIMING
(2)
(2)
(1)
NOTES:
1. Valid data is presented at the outputs after all access times are satisfied but can go from the high-impedance state to an invalid-data state prior to the specified access tiems as the outputs are driven when
CAS\ and OE\ are low.
2. Access time is tCPA or tAA dependent.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
DRAM
Austin Semiconductor, Inc.
SMJ44400
ENHANCED-PAGE-MODE WRITE-CYCLE TIMING2
(1)
(1)
NOTES:
1. Referenced to CAS\ or W\, whichever occurs last.
2. A read cycle or a read-write cycle can be intermixed with write cycles as long as read and read-write timing specifications are not violated.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
DRAM
SMJ44400
Austin Semiconductor, Inc.
ENHANCED-PAGE-MODE READ-WRITE-CYCLE TIMING2
(1)
(1)
NOTES:
1. Valid data is presented at the outputs after all access times are satisfied but can go from the high-impedance state to an invalid-data state prior to the specified access times as the outputs are driven when
CAS\ and OE\ are low.
2. A read or write cycle can be intermixed with read-write cycles as long as the read and write timing specifications are not violated.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14
DRAM
Austin Semiconductor, Inc.
SMJ44400
RAS\-ONLY REFRESH TIMING
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
15
DRAM
Austin Semiconductor, Inc.
SMJ44400
AUTOMATIC-CBR-REFRESH-CYCLE TIMING
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
16
DRAM
Austin Semiconductor, Inc.
SMJ44400
HIDDEN-REFRESH-CYCLE (READ) TIMING
(1)
NOTES:
1. Valid data is presented at the outputs after all access times are satisfied but can go from the high-impedance state to an invalid-data state prior to the specified access times as the outputs are driven when
CAS\ and OE\ are low.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
17
DRAM
SMJ44400
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #113 (Package Designator JD)
SMD 5962-90847, Case Outline U
D
D1
A
Q
L
E
S1
b2
e
b
Pin 1
eA
c
SMD Specifications
SYMBOL
A
b
b2
c
D
D1
E
eA
e
Q
L
S1
MIN
--0.015
0.045
0.008
0.980
0.890
0.380
0.385
MAX
0.175
0.021
0.065
0.014
1.030
0.910
0.410
0.420
0.100 BSC
0.015
0.125
---
0.060
0.200
0.070
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
18
DRAM
SMJ44400
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #308 (Package Designator HR)
SMD 5962-90847, Case Outline X
E
L
123456
123456
1234
1234
1234
1234
1234
1234
1234
1234
1234
1234
1234
1234
1234
1234
1234
1234
1234
1234
1234
1234
1234
123
123
123
123
123
123
123
123
123
123
123
123
123
123
123
123
123
123
123
123
123
e
D
b
S
Q
c
A
SYMBOL
A
b
c
D
E
e
L
Q
S
SMD Specifications
MIN
MAX
0.080
0.100
0.015
0.021
0.004
0.010
0.690
0.710
0.483
0.497
0.050 TYP
0.340
0.370
0.025
0.035
0.101
0.133
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
19
DRAM
SMJ44400
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: SMJ44400-12JDM
Device
Number
Speed ns
Package
Type
Process
SMJ44400
-80
JD
/*
SMJ44400
-10
JD
/*
SMJ44400
-12
JD
/*
EXAMPLE: SMJ44400-80HRM
Device
Number
Speed ns
Package
Type
Process
SMJ44400
-80
HR
/*
SMJ44400
-10
HR
/*
SMJ44400
-12
HR
/*
*AVAILABLE PROCESSES
M = Extended Temperature Range
SMJ44400
Rev. 2.0 10/01
-55oC to +125oC
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
20
DRAM
Austin Semiconductor, Inc.
SMJ44400
ASI TO DSCC PART NUMBER
CROSS REFERENCE*
ASI Package Designator JD
TI Part #**
SMJ44400-12/JDM
SMJ44400-10/JDM
SMJ44400-80/JDM
SMD Part #
5962-9084701MUA
5962-9084702MUA
5962-9084703MUA
ASI Package Designator HR
TI Part #**
SMJ44400-12/HRM
SMJ44400-10/HRM
SMJ44400-80/HRM
SMD Part #
5962-9084701MXA
5962-9084702MXA
5962-9084703MXA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
** Parts are listed on SMD under the old Texas Instruments part number. ASI purchased this product line in November of 1999.
SMJ44400
Rev. 2.0 10/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
21