CHENG-YI GBU8J

GBU8A thru GBU8M SERIES
SILICON BRIDGE RECTIFIERS
GLASS PASSIVATED
BRIDGE RECTIFIERS
CHENG- YI
ELECTRONIC
REVERSE VOLTAGE -50 to 1000 Volts
FORWARD CURRENT -8.0 Amperes
FEATURES
Surge overload rating-175 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
Plastic material has Underwriters Laboratory
Flammability classification 94V-O
Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 250C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBU8A
GBU8B
GBU8D
GBU8G
GBU8J
GBU8K
GBU8M
UNITS
100
200
400
600
800
1000
V
Maximum Recurrent Peak Reverse Voltage
VRRM
50
Maximum RMS Bridge Input Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward (with heatsink Note2)
Rectified Current @ TC=100 C (without heatsink)
I(AV)
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load(JEDEC Method)
IFSM
200
A
Maximum DC Forward Voltage at 4.0A DC
VF
1.0
V
Maximum DC Reverse Current
at rated DC Blocking Voltage
IR
0
@ TA=25 C
0
@ TA=1250C
I2 t Rating for fusing (t<8.3ms)
I2 t
CJ
Typical Junction Capacitance per element(Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
R
JC
8.0
A
3.2
5.0
A
500
2
166
AS
PF
60
2.2
0
C/W
TJ
-55 to +150
0
TSTG
-55 to +150
0
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 100mm x 100mm X 1.6mm Cu Plate Heatsink.
C
C
GBU8A thru GBU8M SERIES
SILICON BRIDGE RECTIFIERS
GLASS PASSIVATED
BRIDGE RECTIFIERS
CHENG- YI
ELECTRONIC
RATING AND CHARACTERISTICS CURVES
GBU8A THRU GBU8M
FIG. 2 - MAXIMUM NON-REPETITIVE
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG. 1 - FORWARD CURRENT DERATING CURVE
10.0
WITH HEATSINK
170
8.0
150
6.0
WITHOUT HEATSINK
100
4.0
2.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.0
0
20
40
60
80
100
120
50
Single Half Sine-Wave
(JEDEC METHOD)
0
140
1
2
5
CASE TEMPERATURE, 0C
20
50
100
FIG. 4 - TYPICAL FORWARD CHARACTERISTICS
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
100
INSTANTANEOUS FORWARD CURRENT, (A)
1000
100
10
10
1.0
0
TJ=25C
PULSE WIDTH:300
0
TJ=25C,
f= 1MHz
1.0
4.0
10.0
100
0
REVERSE VOLTAGE, VOLTS
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
1000
0
TJ=125C
100
0
TJ=100C
10
TJ=500C
1.0
TJ=250C
0.1
0
S
0.1
A)
1.0
INSTANTANEOUS REVERSE CURRENT, (
CAPACITANCE, (pF)
10
NUMBER OF CYCLES AT 60Hz
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
1.8