RS4005G thru RS410G KBJ4005G thru KBJ410G CHENG- YI SINGLE-PHASE SILICON BRIDGE ELECTRONIC VOLTAGE RANGE 50 TO 1000 VOLTS CURRENT 4.0 Amperes .189(4.8) .157(4.0) .035(0.9) .134(3.4) .122(3.1) .677(17.2) .043(1.1) ~ .145(3.7) .130(3.3) .700(17.8) ~ .075(1.9) + Rating to 1000V PRV Ideal for printed circuit board Realiable low cost construction utilizing molded plastic technique Plastic material has Underwriters Laboratory flammability classification 94V-O Lead solderable per MIL-STD-202 Meyhod 208 Surge overload rating to 120 Amperes peak Polarity symbols molded on body Mounting position:Any Weight:0.16 ounce 4.6 grams .060(1.5) FEATURES .173(4.4) .150(3.8) .134(3.4) .382(9.7) .366(9.3) .118(3.0)X45 .60(15.3) .578(14.7) .992(25.2) .916(26.0) .114(2.9) .098(2.5) .030(7.70) .287(7.30) .043(1.1) .031(.80) All Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 250C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. RS401G RS402G RS404G RS406G RS408G RS410G KBJ4005G KBJ401G RS4005G KBJ402G KBJ404G KBJ406G KBJ408G KBJ410G 800 1000 V UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 Maximum RMS Bridge Input Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current @ TC=115 C V(AV) 4.0 A Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC METHOD) IFSM 120 A Maximum DC Forward Voltage drop per element at 2.0A DC VF 1.0 V 0 Maximum DC Reverse Current at rated @ TA=250 C DC Blocking Voltage per element @ TA=125 C IR Typical Junction Capacitance ( Note 1) CJ 0 0 Typical Thermal Resistance ( Note 2) Operating Temperature Range Storage Temperature Range R JC 100 200 400 600 A 5 500 A PF 40 5.5 0 C/W TJ -55 to +150 0 TSTG -55 to +150 0 Notes:1.Measured at 1.0 MHZ and applied reverse voltage of 4.0v DC 2.Thermal Resistance Junction to Case C C RS4005G thru RS410G KBJ4005G thru KBJ410G CHENG- YI SINGLE-PHASE SILICON BRIDGE ELECTRONIC RATING AND CHARACTERISTICS CURVES KBJ4005G THRU KBJ410G RS4005G THRU RS410G AVERAGE FORWARD OUTPUT CURRENT AMPERES Fig.1 - MAXIMUM FORWARD SURGE CURRENT 5 Fig.4 - MAXIMUM NON-REPETITIVE SURGE CURRENT 120 4 100 3 0 TJ=150C single sine-wave (JEDEC Method) 80 2 60 60Hz RESISTIVE OR INDUCTIVE LOAD 1 25 40 75 50 125 100 20 150 CASE TEMPERATURE, 0C 0 INSTANTANEOUS FORWARD CURRENT. AMPERES 1 5 2 Fig.2 - TYPICAL FORWARD CHARACTERISTICS 10 50 20 100 NUMBER OF CYCLES AT 60 Hz 10 0 TJ=150C Fig.5 - TYPICAL REVERSE CHARACTERISTICS 1.0 1000 TJ=250C 0 TJ=150C 0.1 0 TJ=125C 100 .01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 TJ=100C INSTANTANEOUS FORWARD VOLTAGE, VOLTS 10 Fig.3 - TYPICAL JUNCTION CAPACITANCE 100 CAPACITANCE, pF 1.0 TJ=250C f=1.0MHz TJ=250C 50 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE 10 1 4 10 REVERSE VOLTAGE, VOLTS 100