CHENMKO BAV70PT

CHENMKO ENTERPRISE CO.,LTD
BAV70PT
SURFACE MOUNT
SWITCHING DIODE
VOLTAGE 75 Volts CURRENT 0.15 Ampere
APPLICATION
* Ultra high speed switching
FEATURE
.019 (0.50)
.041 (1.05)
.033 (0.85)
(1)
* Silicon epitaxial planar
.066 (1.70)
CONSTRUCTION
.110 (2.80)
.082 (2.10)
.119 (3.04)
* Lead free devices
* A4
CIRCUIT
(2)
(2)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
.055 (1.40)
.047 (1.20)
MARKING
(3)
.045 (1.15)
.033 (0.85)
(1)
Dimensions in inches and (millimeters)
(3)
.002 (0.05)
* Maximum total power disspation is 300mW.
* Peak forward current is 450mA.
.018 (0.30)
SOT-23
* Small surface mounting type. (SOT-23)
* High speed. (TRR=1.5nSec Typ.)
* Suitable for high packing density.
SOT-23
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
BAV70PT
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
75
Volts
Maximum RMS Voltage
VRMS
53
Volts
Maximum DC Blocking Voltage
VDC
70
Volts
IO
0.15
Amps
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 1uSec.
IFSM
4.0
Amps
Typical Junction Capacitance between Terminal (Note 1)
CJ
1.5
pF
Maximum Reverse Recovery Time (Note 2)
TRR
4.0
nSec
TJ
+150
o
C
-55 to +150
o
C
Maximum Operating Temperature Range
Storage Temperature Range
TSTG
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
BAV70PT
UNITS
Maximum Instantaneous Forward Voltage at IF= 150mA
CHARACTERISTICS
VF
1.25
Volts
Maximum Average Reverse Current at VR= 70V
IR
2.5
uAmps
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts.
2. Measured at applied froward current of 10mA and reverse voltage of 10.0 volts.
3. ESD sensitive product handling required.
2002-5
FIG. 1 - TYPICAL FORWARD CURRENT
DERAING CURVE
125
FIG. 2 - FORWARD CHARACTERISTICS
50
FORWARD CURRENT, (mA)
AVERAGE FORWARD CURRENT, (%)
RATING CHARACTERISTIC CURVES ( BAV70PT )
100
75
50
25
0
20
10
5
Ta=85oC
50oC
25oC
0oC
o
- 30 C
2
1
0.5
0.2
0.1
25
0
50
75
100
125
150
0
0.2
o
0.4
0.6
0.8
1.0
1.4
1.2
AMBIENT TEMPERATURE, ( C)
FORWARD VOLTAGE, (V)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
FIG. 4 - REVERSE CHARACTERISTICS
1.6
REVERSE CURRENT, (nA)
JUNCTION CAPACITANCE, (pF)
Ta=100oC
f=1MHz
4
2
75oC
100
50oC
10
25oC
1
0oC
-
0.01
0
0
2
4
6
8
10
12
14
16
18
20
20
0
REVERSE VOLTAGE, (V)
30
40
50
60
70
REVERSE VOLTAGE, (V)
FIG. 5 - REVERSE RECOVERY TIME
FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT
10
REVERSE RECOVERY TIME, (nS)
25oC
0.1
0.01µF
9
D.U.T.
VR=6V
8
5
7
PULSE GENERATOR
OUTPUT 50
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
FORWARD CURRENT, (mA)
8
9
10
50
SAMPLING
OSCILLOSCOPE
80