CHENMKO ENTERPRISE CO.,LTD BAV70PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 75 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching FEATURE .019 (0.50) .041 (1.05) .033 (0.85) (1) * Silicon epitaxial planar .066 (1.70) CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) * Lead free devices * A4 CIRCUIT (2) (2) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .055 (1.40) .047 (1.20) MARKING (3) .045 (1.15) .033 (0.85) (1) Dimensions in inches and (millimeters) (3) .002 (0.05) * Maximum total power disspation is 300mW. * Peak forward current is 450mA. .018 (0.30) SOT-23 * Small surface mounting type. (SOT-23) * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density. SOT-23 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL BAV70PT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 75 Volts Maximum RMS Voltage VRMS 53 Volts Maximum DC Blocking Voltage VDC 70 Volts IO 0.15 Amps Maximum Average Forward Rectified Current Peak Forward Surge Current at 1uSec. IFSM 4.0 Amps Typical Junction Capacitance between Terminal (Note 1) CJ 1.5 pF Maximum Reverse Recovery Time (Note 2) TRR 4.0 nSec TJ +150 o C -55 to +150 o C Maximum Operating Temperature Range Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL BAV70PT UNITS Maximum Instantaneous Forward Voltage at IF= 150mA CHARACTERISTICS VF 1.25 Volts Maximum Average Reverse Current at VR= 70V IR 2.5 uAmps NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at applied froward current of 10mA and reverse voltage of 10.0 volts. 3. ESD sensitive product handling required. 2002-5 FIG. 1 - TYPICAL FORWARD CURRENT DERAING CURVE 125 FIG. 2 - FORWARD CHARACTERISTICS 50 FORWARD CURRENT, (mA) AVERAGE FORWARD CURRENT, (%) RATING CHARACTERISTIC CURVES ( BAV70PT ) 100 75 50 25 0 20 10 5 Ta=85oC 50oC 25oC 0oC o - 30 C 2 1 0.5 0.2 0.1 25 0 50 75 100 125 150 0 0.2 o 0.4 0.6 0.8 1.0 1.4 1.2 AMBIENT TEMPERATURE, ( C) FORWARD VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE FIG. 4 - REVERSE CHARACTERISTICS 1.6 REVERSE CURRENT, (nA) JUNCTION CAPACITANCE, (pF) Ta=100oC f=1MHz 4 2 75oC 100 50oC 10 25oC 1 0oC - 0.01 0 0 2 4 6 8 10 12 14 16 18 20 20 0 REVERSE VOLTAGE, (V) 30 40 50 60 70 REVERSE VOLTAGE, (V) FIG. 5 - REVERSE RECOVERY TIME FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT 10 REVERSE RECOVERY TIME, (nS) 25oC 0.1 0.01µF 9 D.U.T. VR=6V 8 5 7 PULSE GENERATOR OUTPUT 50 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 FORWARD CURRENT, (mA) 8 9 10 50 SAMPLING OSCILLOSCOPE 80