CHENMKO ENTERPRISE CO.,LTD CHBD2004APT SURFACE MOUNT SWITCHING DIODE VOLTAGE 300 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. (SOT-23) * KL7 (2) (2) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .055 (1.40) .047 (1.20) MARKING (3) .045 (1.15) .033 (0.85) (1) Dimensions in inches and (millimeters) (3) .002 (0.05) .066 (1.70) * Silicon epitaxial planar .110 (2.80) .082 (2.10) .119 (3.04) (1) CONSTRUCTION CIRCUIT .019 (0.50) .041 (1.05) .033 (0.85) * Maximum total power disspation is 350mW. * Peak forward current is 625mA. * High voltage capability. .018 (0.30) SOT-23 * High speed. (TRR=50 nSec Typ.) * Suitable for high packing density. SOT-23 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL CHBD2004APT UNITS Maximum Recurrent Peak Reverse Voltage RATINGS VRRM 300 Volts Maximum RMS Voltage VRMS 210 Volts Maximum DC Blocking Voltage VDC 240 Volts IO 0.2 Amps Maximum Average Forward Rectified Current Peak Forward Surge Current at 1mSec. @TP= 1mSec @TP= 1Sec IFSM 4.0 1.0 Amps Typical Junction Capacitance between Terminal (Note 1) CJ 5.0 pF Maximum Reverse Recovery Time (Note 2) TRR 50 nSec Typical Thermal Resistance R Operation and Storage Temperature Range JA TJ,TSTG 357 -65 to +150 o C/W o C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Reverse Breakdown Voltage at IR= 100uA Maximum Instantaneous Forward Voltage at IF= 100mA Maximum Average Reverse Current at VR= 240V @TA= 25OC SYMBOL CHBD2004APT UNITS BVR 300 Min. Volts VF 1.0 Volts 100 nAmps 100 uAmps IR @TA= 150OC NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at applied froward current of 30mA ,reverse current of 30mA ,RL=100 3. ESD sensitive product handling required. 2004-07 and recovery to IRR=-3mA. RATING CHARACTERISTIC CURVES ( CHBD2004APT ) FIG. 2 - FORWARD CHARACTERISiTICS 1.0 -25 o C 100u 25 o C 75 o C 25 1m o 50 10m C 75 100m 5 100 12 FORWARD CURRENT, (A) AVERAGE FORWARD CURRENT, (%) FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURRENT 125 10u 0 25 0 50 75 100 125 150 0 0.2 0.4 AMBIENT TEMPERATURE, (oC) 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, (V) FIG. 3 - REVERSE CHARACTERISTICS FIG. 4 - TYPICAL JUNCTION CAPACITANCE REVERSE CURRENT, (nA) Ta= 100oC 75oC 1uA 50oC 100 25oC 0oC 10 - 25oC 1.0 0.1 JUNCTION CAPACITANCE, (pF) 10uA f=1MHz 4 2 0 0 50 100 150 200 250 300 0 2 4 REVERSE VOLTAGE, (V) 8 10 12 14 16 18 FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT FIG. 5 - REVERSE RECOVERY TIME 100 REVERSE RECOVERY TIME, (nS) 6 REVERSE VOLTAGE, (V) 0.01µF D.U.T. IR=30mA 90 80 5 70 PULSE GENERATOR OUTPUT 50 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 FORWARD CURRENT, (mA) 80 90 100 100 SAMPLING OSCILLOSCOPE 20