CHENMKO CHBD2004N1APT

CHENMKO ENTERPRISE CO.,LTD
CHBD2004N1APT
SURFACE MOUNT
SWITCHING DIODE
VOLTAGE 300 Volts CURRENT 0.2 Ampere
APPLICATION
* Ultra high speed switching
FEATURE
FBPT-923
* Small surface mounting type. (FBPT-923)
*
*
*
*
High speed. (TRR=50 nSec Typ.)
Suitable for high packing density.
Peak forward current is 625mA.
High voltage capability.
0.5±0.05
1.0±0.05
0.37(REF.)
CONSTRUCTION
1.0±0.05
* Silicon epitaxial planar
0.25(REF.)
0.05±0.04
0.68±0.05
0.42±0.05
CIRCUIT
(2)
0.3±0.05
(1)
0.26±0.05
Dimensions in millimeters
(3)
FBPT-923
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
CHBD2004N1APT
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
300
Volts
Maximum RMS Voltage
VRMS
210
Volts
Maximum DC Blocking Voltage
VDC
240
Volts
IO
0.2
Amps
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 1mSec.
@TP= 1mSec
@TP= 1Sec
IFSM
4.0
1.0
Amps
Typical Junction Capacitance between Terminal (Note 1)
CJ
5.0
pF
Maximum Reverse Recovery Time (Note 2)
TRR
50
nSec
Typical Thermal Resistance
R
Operation and Storage Temperature Range
JA
TJ,TSTG
357
-65 to +150
o
C/W
o
C
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
Reverse Breakdown Voltage at IR= 100uA
Maximum Instantaneous Forward Voltage at IF= 100mA
Maximum Average Reverse Current at VR= 240V
@TA= 25OC
SYMBOL
CHBD2004N1APT
UNITS
BVR
300 Min.
Volts
VF
1.0
Volts
100
nAmps
100
uAmps
IR
@TA= 150OC
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts.
2. Measured at applied froward current of 30mA ,reverse current of 30mA ,RL=100
3. ESD sensitive product handling required.
2006-07
and recovery to IRR=-3mA.
RATING CHARACTERISTIC CURVES ( CHBD2004N1APT )
FIG. 2 - FORWARD CHARACTERISiTICS
1.0
-25 o
C
100u
25 o
C
75 o
C
25
1m
o
50
10m
C
75
100m
5
100
12
FORWARD CURRENT, (A)
AVERAGE FORWARD CURRENT, (%)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURRENT
125
10u
0
25
0
50
75
100
125
150
0
0.2
0.4
AMBIENT TEMPERATURE, (oC)
0.6
0.8
1.0
1.2
1.4
FORWARD VOLTAGE, (V)
FIG. 3 - REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
REVERSE CURRENT, (nA)
Ta= 100oC
75oC
1uA
50oC
100
25oC
0oC
10
-
25oC
1.0
0.1
JUNCTION CAPACITANCE, (pF)
10uA
f=1MHz
4
2
0
0
50
100
150
200
250
300
0
2
4
REVERSE VOLTAGE, (V)
8
10
12
14
16
18
FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT
FIG. 5 - REVERSE RECOVERY TIME
100
REVERSE RECOVERY TIME, (nS)
6
REVERSE VOLTAGE, (V)
0.01µF
D.U.T.
IR=30mA
90
80
5
70
PULSE GENERATOR
OUTPUT 50
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
FORWARD CURRENT, (mA)
80
90
100
100
SAMPLING
OSCILLOSCOPE
20