CHENMKO ENTERPRISE CO.,LTD BAS316PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 100 Volts CURRENT 0.25 Ampere APPLICATION * Ultra high speed switching SC-76/SOD-323 FEATURE * Small surface mounting type. (SC-76/SOD-323) * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density. Cathode Band * Maximum total power disspation is 225mW. (1) (2) 0.25~0.4 1.15~1.4 CONSTRUCTION 1.6~1.8 * Silicon epitaxial planar MARKING * Z9 0.6~1.0 0.08~0.177 0.25~0.45 0.1Max. CIRCUIT 2.3~2.7 (2) Dimensions in millimeters (1) SC-76/SOD-323 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL BAS316PT UNITS Maximum Recurrent Peak Reverse Voltage RATINGS VRRM 100 Volts Maximum RMS Voltage VRMS 70 Volts Maximum DC Blocking Voltage VDC 75 Volts IO 0.25 Amps Maximum Average Forward Rectified Current Peak Forward Surge Current at 1uSec. IFSM 4.0 Amps Typical Junction Capacitance between Terminal (Note 1) CJ 4.0 pF Maximum Reverse Recovery Time (Note 2) TRR 4.0 nSec TJ +150 o C -55 to +150 o C Maximum Operating Temperature Range Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS IF= 1mA 10mA Maximum Instantaneous Forward Voltage at IIF= F= 50mA IF= 150mA Maximum Average Reverse Current at VR= 25V VR= 75V SYMBOL VF IR NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at applied froward current of 10mA and reverse voltage of 6.0 volts. 3. ESD sensitive product handling required. BAS316PT 0.715 0.855 1.0 1.25 0.03 1.0 UNITS Volts uAmps 2004-9 RATING CHARACTERISTIC CURVES ( BAS316PT ) FIG. 2 - FORWARD CHARACTERISiTICS 1.0 -25 o C 100u 25 o C 75 o C 25 1m o 50 10m C 75 100m 5 100 12 FORWARD CURRENT, (A) AVERAGE FORWARD CURRENT, (%) FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURRENT 125 10u 0 25 0 50 75 100 125 150 0 0.2 0.4 AMBIENT TEMPERATURE, (oC) 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, (V) FIG. 3 - REVERSE CHARACTERISTICS FIG. 4 - TYPICAL JUNCTION CAPACITANCE REVERSE CURRENT, (nA) Ta= 100oC 75oC 100 50oC 10 25oC 0oC 1 - 25oC 0.1 0.01 JUNCTION CAPACITANCE, (pF) 1000 f=1MHz 4 2 0 0 20 40 60 80 100 0 2 4 REVERSE VOLTAGE, (V) 8 10 12 14 16 18 FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT FIG. 5 - REVERSE RECOVERY TIME 10 REVERSE RECOVERY TIME, (nS) 6 REVERSE VOLTAGE, (V) 0.01µF D.U.T. VR=6V 9 8 5 7 PULSE GENERATOR OUTPUT 50 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 FORWARD CURRENT, (mA) 8 9 10 50 SAMPLING OSCILLOSCOPE 20