CHENMKO ENTERPRISE CO.,LTD CHDTC125TKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 (2) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85) 1 .002 (0.05) .055 (1.40) .047 (1.20) (3) .007 (0.177) Emitter .066 (1.70) CONSTRUCTION .110 (2.80) .082 (2.10) (1) * One NPN transistors and bias of thin-film resistors in one package. CIRCUIT .019 (0.50) .041 (1.05) .033 (0.85) Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in single resistor(R1=200kΩ, Typ. ) .119 (3.04) * * * * .018 (0.30) SOT-23 * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. TR R1 3 Collector SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage 50 V VCEO Collector-Emitter voltage 50 V VEBO Emitter-Base voltage 5 V IC(Max.) Coll ector current 100 mA PD Power dissipation 200 mW TSTG Storage temperature −55 ∼ +150 O TJ Junction temperature −55 ∼ +150 O C 140 O C/W RθJ-S Thermal resistance , Note 1 Tamb ≤ 25 OC, Note 1 junction - soldering point C Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-06 RATING CHARACTERISTIC ( CHDTC125TKPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 50 − − V 50 − − V IE=50uA 5.0 − − V Collector cutoff current VCB=50V − − 0.5 uA Emitter cutoff current VEB=4V − − 0.5 uA VCE(sat) Collector-emitter saturation voltage IC/IB=0.5mA/0.05mA − − 0.3 V hFE DC current gain IC=1mA; VCE=5.0V 100 250 600 R1 fT Input resistor Transition frequency 140 − 200 250 260 − BVCBO Collector-base breakdown voltage BVCEO Collector-emitter breakdown voltage IC=1.0mA BVEBO Emitter-base breakdown voltage ICBO IEBO Note 1.Pulse test: tp≤300uS; δ≤0.02. IC=50uA IC=5mA, VCE=10.0V f=100MHz KΩ MHz