CHENMKO ENTERPRISE CO.,LTD CHUMD6PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * * * * SC-88/SOT-363 Low colloector-emitter saturation. High saturation current capability. Both the CHDTA143T & CHDTC143T in one package. Built in bias resistor(R1=4.7kΩ, Typ. ) (1) (6) 0.65 1.2~1.4 2.0~2.2 0.65 (4) 0.15~0.35 (3) 1.15~1.35 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. CIRCUIT 6 4 2.15~2.45 R1 R1 1 3 SC-88/SOT-363 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage 50 V VCEO Collector-Emitter voltage 50 V VEBO Emitter-Base voltage 5 V IC(Max.) Coll ector current 100 mA PD Power dissipation 150 mW TSTG Storage temperature −55 ∼ +150 O TJ Junction temperature −55 ∼ +150 O C 140 O C/W RθJ-S Thermal resistance , Note 1 Tamb ≤ 25 OC, Note 1 junction - soldering point C Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-01 RATING CHARACTERISTIC ( CHUMD6PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 50 − − V 50 − − V IE=50uA 5.0 − − V Collector cutoff current VCB=50V − − 0.5 uA Emitter cutoff current VEB=4V − − 0.5 uA VCE(sat) Collector-emitter saturation voltage IC/IB=5mA/0.25mA − − 0.3 V hFE DC current gain IC=1mA; VCE=5.0V 100 250 600 R1 fT Input resistor Transition frequency 3.29 − 4.7 250 6.11 − BVCBO Collector-base breakdown voltage BVCEO Collector-emitter breakdown voltage IC=1.0mA BVEBO Emitter-base breakdown voltage ICBO IEBO Note 1.Pulse test: tp≤300uS; δ≤0.02. IC=50uA IC=5mA, VCE=10.0V f=100MHz KΩ MHz RATING CHARACTERISTIC CURVES ( CHUMD6PT ) Fig.1 DC current gain vs. collector current 1k VCE=-5V DC CURRENT GAIN : hFE 500 200 Ta=100OC 25OC -40OC 100 50 20 10 5 2 1 -100u −1m -5m -10m -50m -100m COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) CHDTA143T Typical Electrical Characteristics Fig.2 Collector-emitter saturation voltage vs. collector current -1 lC/lB=20 -500m -200m -100m -50m -20m 100OC 25OC -40 OC -10m -5m -2m -1m -100u COLLECTOR CURRENT : IC (A) -500u -1m -5m -10m -50m -100m COLLECTOR CURRENT : IC (A) CHDTC143T Typical Electrical Characteristics Fig.1 DC current gain vs. collector current VCE = 5V DC CURRENT GAIN : hFE 500 200 100 50 Ta=100OC 25OC -40OC 20 10 5 2 1 100u 1m 2m 5m 10m 20m 50m100m COLLECTOR CURRENT : IC (A) COLLECsaturationTOR VOLTAGE : VCE(sat) (V) 1k Fig.2 Collector-emitter voltage vs. collector current 1 lO/lI=20 500m Ta=100OC 25OC -40 OC 200m 100m 50m 20m 10m 5m 2m 1m 100u 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (uA)