CHENMKO ENTERPRISE CO.,LTD CHBTA13PT SURFACE MOUNT NPN Darlington Transistor VOLTAGE 30 Volts CURRENT 1.2 Ampere APPLICATION * High current gain applications. FEATURE (3) (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) .086 (2.20) .007 (0.177) * NI .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85) C (3) (1) B E (2) .002 (0.05) .066 (1.70) * NPN Darlington Transistor .110 (2.80) .082 (2.10) .119 (3.04) (1) CONSTRUCTION CIRCUIT .019 (0.50) .041 (1.05) .033 (0.85) * Low voltage (Max.=30V) . * High saturation current and current gain capability. .018 (0.30) SOT-23 * Small surface mounting type. (SOT-23) * High current (Max.=1200mA). * Suitable for high packing density. SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 30 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 10 V IC collector current DC − 1200 mA ICM peak collector current − 1500 mA IBM peak base current − 0.5 mA Ptot total power dissipation derate above 25 OC − 350 2.8 mW mW/OC Tstg storage temperature −55 +150 °C Tj junction temperature − +150 °C Tamb operating ambient temperature −55 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board, 1.6"X1.6"X0.06". 2003-5 RATING CHARACTERISTIC CURVES ( CHBTA13PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 357 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board, 1.6"X1.6"X0.06". CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 30 V − 0.1 uA IEBO emitter cut-off current IC = 0; VCE = 10 V − 0.1 uA hFE DC current gain VCE = 5.0 V; note 1 IC = 10 mA 5000 − IC = 100 mA 10000 − VCEsat collector-emitter saturation voltage IC = 100 mA; I B =0.1mA − 1.50 V VBEsat base-emitter saturation voltage IC = 100 mA; VCE = 5.0 V − 2.0 V Ccb collector-base capacitance IE = ie = 0; VCB =10V; f = 1 MHz − 10 pF fT transition frequency IC = 10 mA; VCE =10 V ; f = 100 MHz 125 − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.