CHENMKO ENTERPRISE CO.,LTD CHDTC114WEPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-75/SOT-416 * Small surface mounting type. (SC-75/SOT416) * High current gain. * Suitable for high packing density. Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in bias resistor(R1=10kΩ, Typ. ) (2) 0.1 0.2±0.05 (3) 1.0±0.1 (1) * * * * 0.1 0.3±0.05 CONSTRUCTION 0.5 1.6±0.2 0.5 0.1 0.2±0.05 0.8±0.1 * One NPN transistors and bias of thin-film resistors in one package. MARKING WEA 0.6~0.9 0.15±0.05 0~0.1 0.1Min. Gnd CIRCUIT In 2 1.6±0.2 1 R2 TR R1 3 Out SC-75/SOT-416 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -10 +30 V − 100 − 100 − 150 mW O C IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 +150 TJ Junction temperature − 150 O C Thermal resistance − 140 O C/W RθJ-S junction - soldering point Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 RATING CHARACTERISTIC ( CHDTC114WEPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=100uA; VCC=50V 0.8 − − V VI(on) Input on voltage IO=2mA; VO=0.3V − − 3.0 V VO(on) Output voltage IO=10mA; II=0.5mA − 0.1 0.3 V II Input current VI=5V − − 0.88 mA IC(off) Output current VI=0V; VCC=50V − − 0.5 uA hFE DC current gain IO=-10mA; VO=-5.0V 24 − − R1 Input resistor 13 KΩ Resistor ratio Transition frequency 7 0.37 − 10 R2/R1 fT 0.47 250 0.57 − MHz Note 1.Pulse test: tp≤300uS; δ≤0.02. IE=-5mA, VCE=10.0V f=100MHz =