CHENMKO ENTERPRISE CO.,LTD CHDTC115TEPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-75/SOT-416 * Small surface mounting type. (SC-75/SOT-416) * High current gain. * Suitable for high packing density. Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in single resistor(R1=100kΩ, Typ. ) (2) 0.1 0.2±0.05 (3) 1.0±0.1 (1) * * * * 0.1 0.3±0.05 CONSTRUCTION 0.5 1.6±0.2 0.5 0.1 0.2±0.05 0.8±0.1 * One NPN transistors and bias of thin-film resistors in one package. MARKING TEE 0.6~0.9 0.15±0.05 0~0.1 0.1Min. Emitter CIRCUIT Base 2 1.6±0.2 1 TR R1 3 Collector SC-75/SOT-416 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage 50 V VCEO Collector-Emitter voltage 50 V VEBO Emitter-Base voltage 5 V IC(Max.) Coll ector current 100 mA PD Power dissipation 150 mW TSTG Storage temperature −55 ∼ +150 O TJ Junction temperature −55 ∼ +150 O C 140 O C/W RθJ-S Thermal resistance , Note 1 Tamb ≤ 25 OC, Note 1 junction - soldering point C Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-06 RATING CHARACTERISTIC ( CHDTC115TEPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 50 − − V 50 − − V IE=50uA 5.0 − − V Collector cutoff current VCB=50V − − 0.5 uA Emitter cutoff current VEB=4V − − 0.5 uA VCE(sat) Collector-emitter saturation voltage IC/IB=1mA/0.1mA − − 0.3 V hFE DC current gain IC=1mA; VCE=5.0V 100 250 600 R1 fT Input resistor Transition frequency 70 − 100 250 130 − BVCBO Collector-base breakdown voltage BVCEO Collector-emitter breakdown voltage IC=1.0mA BVEBO Emitter-base breakdown voltage ICBO IEBO Note 1.Pulse test: tp≤300uS; δ≤0.02. IC=50uA IC=5mA, VCE=10.0V f=100MHz KΩ MHz RATING CHARACTERISTIC CURVES ( CHDTC115TEPT ) Typical Electrical Characteristics Fig.1 DC current gain vs. collector current VCE = 5V DC CURRENT GAIN : hFE 500 200 100 Ta=100OC 25OC -40OC 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m100m COLLECTOR CURRENT : IC (A) COLLECsaturationTOR VOLTAGE : VCE(sat) (V) 1k Fig.2 Collector-emitter voltage vs. collector current 1 lO/lI=10 500m Ta=100OC 25OC -40 OC 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (uA)