CHENMKO ENTERPRISE CO.,LTD CHDTC115EEPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 20 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) * High current gain. * Suitable for high packing density. Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in bias resistor(R1=100kΩ, Typ. ) (2) 0.1 0.2±0.05 (3) 1.0±0.1 (1) * * * * SC-75/SOT-416 0.1 0.3±0.05 CONSTRUCTION 0.5 1.6±0.2 0.5 0.1 0.2±0.05 0.8±0.1 * One NPN transistors and bias of thin-film resistors in one package. MARKING EED 0.6~0.9 0.15±0.05 0~0.1 0.1Min. Gnd CIRCUIT In 2 1.6±0.2 1 R2 TR R1 3 Out SC-75/SOT-416 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -10 +40 V − 20 − 100 − 150 mW O C IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 +150 TJ Junction temperature − 150 O C Thermal resistance − 150 O C/W RθJ-S junction - soldering point Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 RATING CHARACTERISTIC ( CHDTC115EEPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=100uA; VCC=5.0V 0.5 − − V VI(on) Input on voltage IO=1mA; VO=0.3V − − 3.0 V VO(on) Output voltage IO=5mA; II=0.25mA − 0.1 0.3 V II Input current VI=5V − − 0.15 mA IO(off) Output current VI=0V; VCC=50V − − 0.5 uA hFE DC current gain IO=5mA; VO=5.0V 82 − − R1 Input resistor 70 100 130 KΩ R2/R1 fT Resistor ratio Transition frequency 0.8 − 1.0 250 1.2 − MHz Note 1.Pulse test: tp≤300uS; δ≤0.02. IC=5mA, VCE=10.0V f=100MHz = RATING CHARACTERISTIC CURVES ( CHDTC115EEPT ) Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 100 Fig.2 Output current vs. input voltage (OFF characteristics) 10m 5m VO=- 0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 O Ta =- 40 C O 25 = C 100OC 2 1 500m VCC =- 5V Ta=100OC 25OC -40 OC 2m 1m 100u 10u 200m 100m 100 200 500 1m 2m 5m 10m 20m 1u 50m 100m 0 Fig.3 DC current gain vs. output current 1k 1 100 50 20 10 5 2 1 100 lO/lI=20 500m OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 200 3.0 Fig.4 Output voltage vs. output current VO =- 5V Ta=100OC 25OC -40OC 2.0 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 500 1.0 Ta=100OC 25OC -40 OC 200m 100m 50m 20m 10m 5m 2m 1m 10m OUTPUT CURRENT : IO (A) 100m 1m 100 1m 10m OUTPUT CURRENT : IO (A) 100m