CHENMKO CHDTA113TKPT

CHENMKO ENTERPRISE CO.,LTD
CHDTA113TKPT
SURFACE MOUNT
PNP Digital Silicon Transistor
VOL TA GE 50 Vo l t s
CURRENT 100 m A m p er e
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
.019 (0.50)
.041 (1.05)
.033 (0.85)
.066 (1.70)
CONSTRUCTION
* One PNP transistors and bias of thin-film resistors in one
package.
.110 (2.80)
.082 (2.10)
(1)
.055 (1.40)
.047 (1.20)
MARKING
(3)
(2)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
E
CIRCUIT
B
2
.007 (0.177)
* R1
.045 (1.15)
.033 (0.85)
1
.002 (0.05)
Low colloector-emitter saturation.
High saturation current capability.
Internal isolated PNP transistors in one package.
Built in bias resistor(R1=1.0kΩ, Typ. )
.119 (3.04)
*
*
*
*
.018 (0.30)
SOT-23
* Small surface mounting type. (SOT-23)
* High current gain.
* Suitable for high packing density.
TR
R1
SOT-23
3
Dimensions in inches and (millimeters)
C
LIMITING VALUES
In accordance with the Absolute Maxim
um Rating System (IEC60134).
SYMBOL
PARAMETER
VALUE
CONDITIONS
UNIT
VCBO
Coll ector -Base voltage
-50
V
VCEO
Collector-Emitter voltage
-50
V
VEBO
Emitter-Base voltage
-5
V
IC(Max.)
Coll ector current
-100
mA
PD
Power dissipation
200
mW
TSTG
Storage temperature
−55 ∼ +150
O
TJ
Junction temperature
−55 ∼ +150
O
C
140
O
C/W
RθJ-S
Thermal resistance , Note 1
Tamb ≤ 25 OC, Note 1
junction - soldering point
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003-12
RATING CHARACTERISTIC ( CHDTA113TKPT )
CHARA CTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SY MBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-50.0
−
−
V
-50.0
−
−
V
−
V
BVCBO
Collector-Base breakdown voltage
BVCEO
Collector-Emitter breakdown voltage IC= -1mA
BVEBO
Emitter-Base breakdown voltage
IE= -50uA
-5.0
−
IC= -50uA
TY P .
−
VCE(sat)
Collector-Emitter Saturation voltage
IC= -5mA; IB= -0.25mA
−
-0.3
V
ICBO
Collector-Base current
VCB= -50V
−
−
-0.5
uA
IEBO
Emitter-Base current
VEB= -4V
−
−
-0.5
uA
hFE
DC current gain
IC= -1mA; VCE= -5.0V
100
250
600
R1
fT
Input resistor
Transition frequency
0.7
−
1.0
250
1.3
−
Not e
1.Pulse test: tp≤300uS; δ ≤0.02.
IE=5mA, VCB= -10.0V
f=100MHz
=
KΩ
MHz
RATING CHARACTERISTIC CURVES ( CHDTA113TKPT )
Fig.1 DC current gain vs. collector
current
1k
DC CURRENT GAIN : hFE
500
VCE=-5V
Ta=100OC
200
100
25OC
O
-40 C
50
20
10
5
2
1
-100
-500 −1m
-5m -10m
-50m -100m
COLLECTOR CURRENT : IC (A)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Typical Electrical Characteristics
Fig.2 Collector-emitter saturation
voltage vs. collector current
-1
lC/lB=10
-500m
-200m
-100m
-50m
100OC
25OC
-40 OC
-20m
-10m
-5m
-2m
-1m
-100u
-500u -1m
-5m -10m
COLLECTOR CURRENT : IC (A)
-50m -100m