CHENMKO ENTERPRISE CO.,LTD CHDTC144VMPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT-723 * Small surface mounting type. (SOT-723) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in bias resistor(R1=47kΩ, Typ. ) (3) (2) 0.17~0.27 0.4 1.15~1.25 0.4 0.75~0.85 0.27~0.37 CONSTRUCTION (1) 0.17~0.27 0.75~0.85 * One NPN transistors and bias of thin-film resistors in one package. 0.45~0.55 0.11~0.14 CIRCUIT Gnd In 2 1 1.15~1.25 R2 TR R1 3 Out SOT-723 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -15 +40 V − 30 − 100 − 150 mW O C IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 +150 TJ Junction temperature − 150 O C Thermal resistance − 140 O C/W RθJ-S junction - soldering point Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-06 RATING CHARACTERISTIC ( CHDTC144VMPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=100uA; VCC=5.0V 1.0 − − V VI(on) Input on voltage IO=2mA; VO=0.3V − − 6.0 V VO(on) Output voltage IO=10mA; II=0.5mA − 0.1 0.3 V II Input current VI=5V − − 0.16 mA IC(off) Output current VI=0V; VCC=50V − − 0.5 uA hFE DC current gain IO=5mA; VO=5.0V 33 − − R1 Input resistor 61.1 KΩ Resistor ratio Transition frequency 32.9 0.17 − 47 R2/R1 fT 0.21 250 0.26 − MHz Note 1.Pulse test: tp≤300uS; δ≤0.02. IE=-5mA, VCE=10.0V f=100MHz =