CHENMKO ENTERPRISE CO.,LTD CHDTA125TKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 (2) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85) 1 .002 (0.05) .055 (1.40) .047 (1.20) (3) .007 (0.177) E .066 (1.70) CONSTRUCTION .110 (2.80) .082 (2.10) (1) * One PNP transistors and bias of thin-film resistors in one package. CIRCUIT .019 (0.50) .041 (1.05) .033 (0.85) Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=200kΩ, Typ. ) .119 (3.04) * * * * .018 (0.30) SOT-23 * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. TR R1 3 SOT-23 Dimensions in inches and (millimeters) C LIMITING VALUES In accordance with the Absolute Maximum Rating System . SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage -50 V VCEO Collector-Emitter voltage -50 V VEBO Emitter-Base voltage -5 V IC Coll ector current -100 mA PC Collector Power dissipation 200 mW TSTG Storage temperature −55 ∼ +150 O TJ Junction temperature −55 ∼ +150 O C 140 O C/W RθJ-S Thermal resistance , Note 1 Tamb ≤ 25 OC, Note 1 junction - soldering point C Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 RATING CHARACTERISTIC ( CHDTA125TKPT ) CHARA CTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL PARAMETER CONDITIONS MIN. − − V − − V − V − -0.3 V − -0.5 uA − − -0.5 uA 100 250 600 140 − 200 250 260 − Collector-Emitter breakdown voltage IC= -1mA BVEBO Emitter-Base breakdown voltage IE= -50uA VCE(sat) -5.0 Collector-Emitter Saturation voltage IC= -0.5mA; IB= -0.05mA − ICBO Collector-Base current VCB= -50V − IEBO Emitter-Base current VEB= -4V hFE DC current gain IC= -1mA; VCE= -5.0V R1 fT Input resistor Transition frequency Not e 1.Pulse test: tp≤300uS; δ ≤0.02. UNIT -50.0 Collector-Base breakdown voltage BVCEO IE=5mA, VCE= -10.0V f=100MHz = MAX. -50.0 BVCBO IC= -50uA TY P . − KΩ MHz