CHENMKO ENTERPRISE CO.,LTD LL4150PT SURFACE MOUNT FAST SWITCHING DIODE VOLTAGE 50 Volts CURRENT 200 mAmpere APPLICATION * Extreme fast switches. Mini-Melf FEATURE * Small surface mounting type. (MINI-MELF) * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density. * Maximum total power disspation is 500mW. CATHODE BAND CONSTRUCTION 0.4 0.4 1.4±0.1 * Silicon epitaxial planar (1) CIRCUIT +0.2 3.4 0.1 (2) 1.5Max. (2) (1) Dimensions in millimeters Mini-Melf MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL LL4150PT UNITS VRM 50 Volts Reverse Voltage VR 50 Volts Repetitive Peak Forward Current IF 200 mAmps IFAV 200 mAmps IFSM 0.5 Amps Power Dissipation at TA=25 C Ptot 500 mWatt Maximum Capacitance (Note 1) Ctot 4.0 pF Maximum Reverse Recovery Time (Note 2) TRR 4.0 nS TJ 175 o TSTG -65 to +175 o SYMBOL LL4150PT UNITS VF 1.0 Volts 0.1 uAmps 100 uAmps Peak Reverse Voltage Average Forward Current Peak Forward Surge Current @ t=1.0uS o Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage Maximum Average Reverse Current at Reverse Voltage,VR=50V @ TA = 25oC IR @ TJ = 150oC Reverse Breakdown Voltage at Ir=5mA NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volt. 2. IF=-IR=10 to 200mA,to 0.1IF Vbr 35(min.) Volts 2007-04 RATING CHARACTERISTIC CURVES ( LL4150PT ) FIG. 1 - FORWARD CHARACTERISTICS FIG. 2 - REVERSE CHARACTERISTICS 100 REVERSE CURRENT, (uA) FORWARD CURRENT, (mA) 1000 100 Tj=100oC Tj=25oC 10 1.0 0 0.4 0.8 1.2 1.6 2.0 1.0 0.1 FIG. 3 - DIODE CAPACITANCE f=1MHz Tj=25oC 2.5 2.0 1.5 1.0 0.5 0 0.1 1 10 REVERSE VOLTAGE, (V) 0 40 80 120 160 JUNCTION TEMPERATURE, ( oC) FORWARD VOLTAGE, (V) JUNCTION CAPACITANCE, (pF) 10 0.01 0.1 3.0 VR=25V 100 200