CHENMKO 1SS398PT

CHENMKO ENTERPRISE CO.,LTD
1SS398PT
SURFACE MOUNT
SWITCHING DIODE
VOLTAGE 400 Volts CURRENT 100 mAmpere
APPLICATION
* Ultra high speed switching
FEATURE
* Small surface mounting type. (SOT-23)
* High speed and fast reverse recovery time: Trr<0.5uSec
* Suitable for high packing density.
(1)
CONSTRUCTION
* Silicon epitaxial planar
.066 (1.70)
* Power dissipation: 150mW
.110 (2.80)
.082 (2.10)
.119 (3.04)
* High reverse breakdown voltage: Vr>400V
MARKING
* 8D
CIRCUIT
(2)
(2)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
.055 (1.40)
.047 (1.20)
(3)
.045 (1.15)
.033 (0.85)
(1)
.002 (0.05)
* Low reverse current: IR=1.0uA (Typ.)
.019 (0.50)
* Low forward voltage: VF=1.00V(Typ.)
.018 (0.30)
.041 (1.05)
.033 (0.85)
SOT-23
SOT-23
Dimensions in inches and (millimeters)
(3)
o
MAXIMUM RATINGES ( At TA = 25 C unless otherwise noted )
RATINGS
SYMBOL
1SS398PT
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
420
Volts
Maximum RMS Voltage
VRMS
280
Volts
Maximum DC Blocking Voltage
VDC
400
Volts
Maximum Average Forward Rectified Current
IO
100
mAmps
IFSM
300
mAmps
Typical Junction Capacitance between Terminal (Note 1)
CJ
2.5
pF
Typical Reverse Recovery Time (Note 2)
TRR
0.5
uSec
Power Dissipation
PD
150
mW
TJ,TSTG
-55 to +125
Peak Forward Surge Current at 10mSec.
Maximum Operating and Storage Temperature Range
o
C
o
ELECTRICAL CHARACTERISTICS ( At TA = 25 C unless otherwise noted )
CHARACTERISTICS
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
SYMBOL
MIN.
TYP.
MAX.
UNITS
@ IF= 10mA
VF(1)
-
0.80
-
Volts
@ IF= 100mA
VF(2)
-
1.00
1.30
Volts
@ VR= 300V
IR(1)
-
-
0.1
uAmps
@ VR= 400V
IR(2)
-
-
1.0
uAmps
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0.0 volts.
2. Apply at IF=10mA, VR=-6V and Measured at 0.1 IR.
3. ESD sensitive product handling required.
2003-7
RATING CHARACTERISTIC CURVES ( 1SS398PT )
FIG. 1 - FORWARD CHARACTERISTICS
FIG. 2 - REVERSE CHARACTERISTICS
1000n
100m
REVERSE CURRENT, (A)
FORWARD CURRENT, (A)
1
o
Ta=100oC
25oC
-25 C
10m
1m
100u
Ta=100oC
10n
75oC
1n
50oC
100p
25oC
10p
1p
10u
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
20
40
80
100
120
140
REVERSE VOLTAGE, (V)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
FIG. 4 - POWER DERATING CURVE
160
180
POWER DISSIPATION, P (mW)
150
5.0
2.0
1.0
0.5
0.2
0.1
0
10
20
30
40
50
60
70
80
90 100
100
50
0
0
25
50
75
100
125
O
REVERSE VOLTAGE, (V)
AMBIENT TEMPERATURE, TA ( C)
FIG. 5 - REVERSE RECOVERY TIME
FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT
1u
REVERSE RECOVERY TIME, (nS)
60
FORWARD VOLTAGE, (V)
10.0
JUNCTION CAPACITANCE, (pF)
100n
0.01µF
D.U.T.
5
PULSE GENERATOR
OUTPUT 50
100
10
TA=25OC
5
30u
100u
1
FORWARD CURRENT, (mA)
10
30
50
SAMPLING
OSCILLOSCOPE
150