CHENMKO ENTERPRISE CO.,LTD 1SS398PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 400 Volts CURRENT 100 mAmpere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. (SOT-23) * High speed and fast reverse recovery time: Trr<0.5uSec * Suitable for high packing density. (1) CONSTRUCTION * Silicon epitaxial planar .066 (1.70) * Power dissipation: 150mW .110 (2.80) .082 (2.10) .119 (3.04) * High reverse breakdown voltage: Vr>400V MARKING * 8D CIRCUIT (2) (2) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .055 (1.40) .047 (1.20) (3) .045 (1.15) .033 (0.85) (1) .002 (0.05) * Low reverse current: IR=1.0uA (Typ.) .019 (0.50) * Low forward voltage: VF=1.00V(Typ.) .018 (0.30) .041 (1.05) .033 (0.85) SOT-23 SOT-23 Dimensions in inches and (millimeters) (3) o MAXIMUM RATINGES ( At TA = 25 C unless otherwise noted ) RATINGS SYMBOL 1SS398PT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 420 Volts Maximum RMS Voltage VRMS 280 Volts Maximum DC Blocking Voltage VDC 400 Volts Maximum Average Forward Rectified Current IO 100 mAmps IFSM 300 mAmps Typical Junction Capacitance between Terminal (Note 1) CJ 2.5 pF Typical Reverse Recovery Time (Note 2) TRR 0.5 uSec Power Dissipation PD 150 mW TJ,TSTG -55 to +125 Peak Forward Surge Current at 10mSec. Maximum Operating and Storage Temperature Range o C o ELECTRICAL CHARACTERISTICS ( At TA = 25 C unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage Maximum Average Reverse Current SYMBOL MIN. TYP. MAX. UNITS @ IF= 10mA VF(1) - 0.80 - Volts @ IF= 100mA VF(2) - 1.00 1.30 Volts @ VR= 300V IR(1) - - 0.1 uAmps @ VR= 400V IR(2) - - 1.0 uAmps NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0.0 volts. 2. Apply at IF=10mA, VR=-6V and Measured at 0.1 IR. 3. ESD sensitive product handling required. 2003-7 RATING CHARACTERISTIC CURVES ( 1SS398PT ) FIG. 1 - FORWARD CHARACTERISTICS FIG. 2 - REVERSE CHARACTERISTICS 1000n 100m REVERSE CURRENT, (A) FORWARD CURRENT, (A) 1 o Ta=100oC 25oC -25 C 10m 1m 100u Ta=100oC 10n 75oC 1n 50oC 100p 25oC 10p 1p 10u 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 20 40 80 100 120 140 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE FIG. 4 - POWER DERATING CURVE 160 180 POWER DISSIPATION, P (mW) 150 5.0 2.0 1.0 0.5 0.2 0.1 0 10 20 30 40 50 60 70 80 90 100 100 50 0 0 25 50 75 100 125 O REVERSE VOLTAGE, (V) AMBIENT TEMPERATURE, TA ( C) FIG. 5 - REVERSE RECOVERY TIME FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT 1u REVERSE RECOVERY TIME, (nS) 60 FORWARD VOLTAGE, (V) 10.0 JUNCTION CAPACITANCE, (pF) 100n 0.01µF D.U.T. 5 PULSE GENERATOR OUTPUT 50 100 10 TA=25OC 5 30u 100u 1 FORWARD CURRENT, (mA) 10 30 50 SAMPLING OSCILLOSCOPE 150