BAT54 THRU BAT54S Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • Low Forward Voltage Surface Mount device Very small conduction losses Catalog Number BAT54 BAT54A BAT54C BAT54S 250mWatt, 30Volt Schottky Barrier Diode Device Marking Pin Configuration See page 3 Figure 1 Figure 2 Figure 3 Figure 4 Type 1 2 3 4 KL1 KL2 KL3 KL4 L4 L42 L43 L44 L4P L42 L43 L44 LV3 B6 LD3 Single Dual Dual Dual SOT-23 A D C Maximum Ratings F Continuos Reverse Voltage Forward Current Non-Repetitive Peak Forward Current t<1s Total Power Dissipation @ TA = 25°C Storage Temperature Range Junction Temperature Soldering temperature during 10s VR IF IFSM PD Tstg Tj Tj 30V 0.3A 1.0A 250mW -55°C to 150°C 150°C 260°C Electrical Characteristics @ 25 °C Unless Otherwise Specified Ratings Forward Voltage at IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA Reverse Current Reverse Breakdown Voltage Capacitance Symbol Reverse Recovery Time Thermal Resistance, Junction to Ambient Max. IR V(BR) 240mV 320mV 400mV 500mV 900mV 2.0 uA >30V CJ 10pF trr 5nS RθJA 430 °C/W VF Notes B E H G J K DIMENSIONS DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 VR = 25V .035 .900 .079 2.000 Measured at 1.0MHz, VR=1.0V IF=IR=10mA; I(REC) = 1mA .037 .950 www.cnelectr.com .037 .950 inches mm BAT54 thru BAT54S Fig.1 : Average forward power dissipation versus average forward current. PF(av)(W) 0.35 0.30 δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 0.30 0.25 δ=1 0.20 0.20 0.15 0.15 0.10 0.10 T T 0.05 0.05 IF(av) (A) 0.05 0.10 0.15 0.20 δ=tp/T 0.25 tp 0.30 Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 IM 0.2 0.1 0.0 1E-3 IF(av)(A) 0.35 0.25 0.00 0.00 Fig.2 : Average forward current versus ambient temperature ( δ = 1). 0.00 δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm x 8mm x 0.5mm). Zth(j-a)/Rth(j-a) 1.00 δ = 0.5 δ = 0.2 Ta=25°C δ = 0.1 Ta=50°C 0.10 Ta=100°C T Single pulse t δ=0.5 tp(s) t(s) 1E-2 1E-1 1E+0 0.01 1E-3 1E-2 1E-1 www.cnelectr.com δ=tp/T 1E+0 1E+1 tp 1E+2 BAT54 thru BAT54S Fig.5 : Reverse leakage current versus reverse voltage applied (typical values). Fig.6 : Reverse leakage current versus junction temperature. IR(µA) IR(µA) 1E+4 VR=30V 1E+2 1E+3 Tj=100°C 1E+1 1E+2 1E+1 1E+0 Tj=50°C 1E+0 Tj=25°C 1E-1 1E-1 Tj(°C) VR(V) 1E-2 0 5 10 1E-2 15 20 25 30 Fig.7 : Junction capacitance versus reverse voltage applied (typical values). 0 25 50 100 125 150 Fig.8 : Forward voltage drop versus forward current (typical values). C(pF) IFM(A) 5E-1 10 F=1MHz Tj=25°C 1E-1 5 Tj=100°C 1E-2 Tj=50°C Tj=25°C 2 1E-3 VFM(V) VR(V) 1 75 1 2 5 10 20 30 1E-4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Pin Configuration - Top View 3 1 2 Figure 1 Figure 2 BAT54 BAT54A Figure 3 BAT54C Figure 4 BAT54S www.cnelectr.com